MDD1503RH MagnaChip MOSFET (N-Channel) (Other) In Stock
MagnaChip MDD1503RH is a single N-channel power MOSFET for high-current switching. It supports 30 V, 87.5 A drain current, 4.7 mOhm RDS(on), and 146 mJ avalanche energy. Suitable for converters, motor drives, and load switching.
- Manufacturer
- MagnaChip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- MDD1503RH Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 30 V N-channel power MOSFET rated for 87.5 A drain current
- 4.7 mOhm maximum drain-source on resistance for low conduction loss
- 146 mJ avalanche energy rating for rugged switching events
- TO-252AA/DPAK 3-pin power package with drain tab
- Single MOSFET configuration with integrated body diode
Applications
MDD1503RH is suited for compact power-management circuits that need low-loss switching at moderate bus voltages. Typical uses include synchronous rectification, DC-DC converters, motor-drive stages, battery protection, and load-switch paths in industrial and consumer equipment.
Specifications
| YTEOL | 5.3 |
| Avalanche Energy Rating (Eas) | 146mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 87.5A |
| Drain-source On Resistance-Max | 0.0047Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 221pF |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 59.5W |
| Pulsed Drain Current-Max (IDM) | 350A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Which high-current switching designs can use MDD1503RH effectively?
MDD1503RH fits low-voltage power stages that need a 30 V N-channel MOSFET with up to 87.5 A drain current and low conduction loss.
How should the PCB footprint and drain connection be checked before approval?
Verify the TO-252AA/DPAK 3-pin mechanical footprint and note that the case/tab connection is drain, which affects copper area and thermal layout.
When does this MOSFET make sense for converter or motor-drive sourcing?
It is useful when the design needs 4.7 mOhm maximum RDS(on), a 146 mJ avalanche rating, and a single MOSFET with body diode behavior.
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