MDV1527URH MagnaChip MOSFET (N-Channel) (Other) In Stock
MDV1527URH is a MagnaChip N-channel power MOSFET for compact switching. It supports 30 V, 20 A drain current, and 15.9 mΩ RDS(on). Use in DC-DC converters, load switches, and power boards.
- Manufacturer
- MagnaChip
- Package
- Other
- Pin Count
- 9
- Lifecycle
- ACTIVE
- Datasheet
- MDV1527URH Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of MDV1527URH?
- N-channel power MOSFET with 30 V drain-source breakdown rating
- 20 A maximum drain-current capability for compact power stages
- 15.9 mΩ maximum drain-source on-resistance reduces conduction loss
- Single MOSFET configuration with built-in body diode
- 8-pin PowerDFN33 package supports dense SMT layouts
What is MDV1527URH used for?
MDV1527URH is suited for low-voltage power conversion, load switching, battery-powered electronics, and synchronous or asynchronous DC-DC converter designs. Buyers can use it where a compact 8-pin MOSFET with low on-resistance is needed for efficient board-level switching.
What are the specifications of MDV1527URH?
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 23mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 20A |
| Drain-source On Resistance-Max | 0.0159Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 60pF |
| JESD-30 Code | S-PDSO-F8 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 23.5W |
| Pulsed Drain Current-Max (IDM) | 60A |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the MDV1527URH datasheet?
MDV1527URH Datasheet DownloadOfficial datasheet from MagnaChip
What are equivalent replacements for MDV1527URH?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How much voltage and current margin does MDV1527URH provide for switching designs?
MDV1527URH is specified with a 30 V drain-source breakdown rating and 20 A maximum drain current, supporting low-voltage switching rails with useful current headroom.
Which package constraints matter when laying out MDV1527URH on a dense PCB?
The part is supplied in an 8-pin PowerDFN33 package, so layout should use a compact SMT footprint with strong thermal copper for the drain connection.
Can MDV1527URH help reduce conduction loss in a power path?
Yes. Its 0.0159 Ω maximum drain-source on-resistance helps reduce I²R loss in load switches, converter paths, and other low-voltage power stages.
What procurement checks are useful before approving MDV1527URH for production?
Confirm the required 30 V rating, 20 A current requirement, package footprint, and traceable MagnaChip supply before locking this MOSFET into a released BOM.
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