MOSFET (N-Channel)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STMicroelectronics STW120NF10

TO-247, 3 PIN

TO-220, 3 PIN

TO-247, 3 PIN

STU80N4F6 N-Channel MOSFET, 80 A, 40 V DeepGate, STripFET, 3-Pin IPAK STMicroelectronics

STU6N60M2 N-Channel MOSFET, 4.5 A, 650 V MDmesh M2, 3-Pin IPAK STMicroelectronics

ROHS COMPLIANT, IPAK-3

STMicroelectronics STU10N60M2 N-channel MOSFET Transistor, 7.5 A, 650 V, 3-Pin IPAK

N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in an IPAK package

STU13N60M2 N-Channel MOSFET, 11 A, 650 V MDmesh M2, 3-Pin IPAK STMicroelectronics

STP10NK70ZFP N-Channel MOSFET, 8.6 A, 700 V MDmesh, SuperMESH, 3-Pin TO-220FP STMicroelectronics

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters

ROHS COMPLIANT, TO-220FP, 3 PIN

STT5N2VH5 N-Channel MOSFET, 5 A, 20 V STripFET V, 6-Pin SOT-23 STMicroelectronics

Use the download button to access the STF45N10F7 schematic symbol, PCB footprint, and 3D model.

ROHS COMPLIANT PACKAGE-3

Use the download button to access the STP9NK90Z schematic symbol, PCB footprint, and 3D model.

TYPICAL RDS(on) = 0.72 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY

N-channel 600 V, 92 mΩ typ., 31.5 A MDmesh II Power MOSFETs in D²PAK and TO-220 packages

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages

TO-220, 3 PIN

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

STP35N65M5 N-Channel MOSFET, 27 A, 650 V MDmesh M5, 3-Pin TO-220 STMicroelectronics

TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFET in a TO-220 package

ROHS COMPLIANT, TO-220FP, 3 PIN

STMICROELECTRONICS - STP7NK40ZFP - MOSFET, N, TO-220FP

N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET™ Power MOSFET

TO-220FP, 3 PIN

TO-220, 3 PIN

N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages

STMicroelectronics STP26NM60ND is an N-channel power MOSFET in TO-220 package, rated 21 A and 600 V. It features ultra-low on-resistance of 0.175 Ω and integrated fast recovery body diode. Available from stock worldwide with competitive pricing.

ROHS COMPLIANT, TO-220, 3 PIN

TO-220, 3 PIN

Use the download button to access the STP57N65M5 schematic symbol, PCB footprint, and 3D model.

The STD7NM60N is an N-channel 600 V MDmesh II power MOSFET from STMicroelectronics with 5 A drain current and 0.9 Ω max on-resistance in a compact DPAK (TO-252) package. Its single-transistor configuration with a built-in diode and 119 mJ avalanche energy rating ensures reliable performance in space-constrained switching designs. Available from major distributors with worldwide shipping.

STP4N150 is a single N-channel power MOSFET from STMicroelectronics rated at 1500 V drain-source breakdown voltage and 4 A continuous drain current with 7 Ω on-resistance in a TO-220AB package.

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

The STP40NF20 is an N-channel STripFET Power MOSFET rated at 200 V and 40 A with a low on-resistance of 0.045 Ω and low gate charge for high-efficiency switching. Available in D2PAK, TO-220, TO-220FP, and TO-247 packages from STMicroelectronics.

Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness

N‑channel 650 V, 90 mΩ typ., 28 A MDmesh M5 Power MOSFETs in a D²PAK, TO-220 and TO-247 packages

ROHS COMPLIANT, TO-220, 3 PIN

STMicroelectronics STP31N65M5 is an N-channel power MOSFET in TO-220 package, rated 22 A and 650 V with 150 W maximum power dissipation. It leverages STripFET M5 technology for reduced switching losses and improved efficiency. Available from stock worldwide with competitive pricing.

The STP17NF25 is an N-Channel STripFET II power MOSFET from STMicroelectronics, rated at 17 A continuous drain current and 250 V drain-source breakdown voltage. It features a low on-state resistance of 0.165 Ω and an avalanche energy rating of 100 mJ in the compact TO-220 package, enabling reliable switching performance.

STP20NK50Z is an N-channel MOSFET from STMicroelectronics in a TO-220AB package, rated at 500 V and 17 A with 0.27 Ω on-resistance and built-in avalanche protection. Competitive pricing available in stock with worldwide shipping.

STMicroelectronics STP24N60M2 is an N-channel power MOSFET in TO-220 package rated at 600 V and 18 A maximum drain current with 0.19 Ω on-resistance. Available from stock with worldwide shipping.

Use the download button to access the STP12N65M5 schematic symbol, PCB footprint, and 3D model.

STMicroelectronics STP18NM60ND N-channel MOSFET Transistor, 13 A, 600 V, 3-Pin TO-220