STP30N65M5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STP30N65M5 is an STMicroelectronics N-channel MOSFET rated at 650 V and 22 A with ultra-low 0.139 Ω on-resistance, 500 mJ avalanche energy rating, and built-in diode in a TO-220AB package. Available in stock with competitive pricing and worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP30N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $3.1668(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V drain-source breakdown with 500 mJ avalanche energy rating for robust operation in high-voltage unclamped inductive switching applications
- Ultra-low on-resistance of 0.139 Ω max at 22 A drain current, significantly reducing conduction losses in switched-mode power supplies versus standard MOSFETs
- TO-220AB single package with built-in drain diode enabling simplified topology design with direct heatsink mounting for high-current power conversion
Applications
STP30N65M5 is targeted at high-efficiency switched-mode power supplies, PFC boost converters, and half-bridge inverter stages operating on 400 V DC bus rails from rectified mains. Its 650 V rating provides a 50 V safety margin over 600 V-class devices for European mains applications, while the 0.139 Ω on-resistance at 22 A keeps conduction losses low at high load currents. The avalanche-rated TO-220AB package simplifies thermal design with direct bolt-to-heatsink mounting in industrial power conversion equipment.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Additional Feature | AVALANCHE ENERGY RATED |
| Avalanche Energy Rating (Eas) | 500mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 22A |
| Drain-source On Resistance-Max | 0.139Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 140W |
| Pulsed Drain Current-Max (IDM) | 88A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does STP30N65M5's 0.139 Ω on-resistance compare to typical 650 V N-channel MOSFETs in SMPS efficiency terms?
At 22 A drain current, STP30N65M5's 0.139 Ω on-resistance produces only 67 W of conduction loss (I² x RDS(on) = 22² x 0.139), which is 30% to 50% lower than standard 650 V MOSFETs rated above 0.25 Ω. This on-resistance advantage directly improves SMPS efficiency by 0.5% to 1.5% at full load in continuous conduction mode boost or flyback topologies.
When should STP30N65M5 be selected over a 600 V MOSFET in a European mains power supply design?
European 230 VAC mains rectifies to approximately 325 V DC peak, with transients reaching 500 V to 550 V during surge events. The STP30N65M5's 650 V rating provides a minimum 100 V margin over worst-case transients on a 400 V DC bus, whereas a 600 V device operates with less than 50 V headroom and risks avalanche at the rated 500 mJ energy during inductive switching without additional clamping.
What thermal advantage does the TO-220AB package of STP30N65M5 provide in a 22 A power circuit?
The TO-220AB metal tab of STP30N65M5 can be bolted directly to an aluminum heatsink with a thermal interface pad, achieving junction-to-case resistance of 1 °C/W or less. At 22 A with 0.139 Ω on-resistance and 50°C ambient temperature, a 20 cm² heatsink keeps the junction below 150 °C, avoiding the need for forced-air cooling that would be required with smaller SMT packages handling the same current.
How does the 500 mJ avalanche energy rating of STP30N65M5 protect motor drive circuits from inductive spikes?
In an unclamped inductive switching (UIS) event from a 10 mH motor winding at 22 A, the stored energy is 0.5 x L x I² = 2.42 J. While this exceeds the single-pulse 500 mJ avalanche rating, repetitive clamped switching with gate drive snubbers limits each spike to below 500 mJ, ensuring the STP30N65M5 safely absorbs inductive kickback in most 600 V-class motor drive applications without external TVS diodes.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $4.7800 | $47.80 |
| 50+ | $3.7100 | $185.50 |
| 100+ | $3.5900 | $359.00 |
| 500+ | $3.3679 | $1683.96 |
| 1000+ | $3.1669 | $3166.95 |
| 2000+ | $3.1667 | $6333.50 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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