DN2540N3-G-P003 Microchip MOSFET (N-Channel) (Other) In Stock
The DN2540N3-G-P003 is an N-channel depletion-mode MOSFET from Microchip, rated at 400 V and 120 mA with a 25 Ω on-resistance in a TO-92-3 package. Available in stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- DN2540N3-G-P003 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.7500(MOQ 1)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 400 V drain-source breakdown voltage supporting high-voltage depletion-mode switch applications
- Built-in body diode in a single TO-92-3 package simplifying circuit design without external protection diodes
- Low feedback capacitance (Crss) of 5 pF max reducing switching noise in high-frequency circuits
- RoHS-compliant, Pb-free construction meeting modern environmental regulations
Applications
The DN2540N3-G-P003 is designed for high-voltage depletion-mode switching in SMPS startup circuits, current limiters, and LED driver protection stages where the gate can be left floating at zero bias to maintain conduction. Its 400 V rating and compact TO-92-3 form factor make it a natural choice for off-line power supply auxiliary circuits and bootstrapping in isolated gate-drive designs. Industrial and telecom equipment designers use this device as a simple constant-current source by connecting the gate to the source.
Specifications
| Pbfree Code | Yes |
| Manufacturer Package Code | TO-92-3 |
| Reach Compliance Code | Compliant |
| Factory Lead Time | 7Weeks |
| YTEOL | 13 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 0.12A |
| Drain-source On Resistance-Max | 25Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 5pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | DEPLETION MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Why is the DN2540N3-G-P003 described as a depletion-mode MOSFET, and how does that change circuit operation versus enhancement-mode devices?
A depletion-mode MOSFET like the DN2540N3-G-P003 is fully ON at zero gate-source voltage (Vgs = 0 V) and turns OFF when a negative gate voltage is applied. This normally-on behavior allows it to conduct at 0.12 A without any gate drive, enabling self-biased current-limiting and startup circuits that enhancement-mode devices cannot implement without additional bias components.
What drain-source voltage and current ratings does the DN2540N3-G-P003 support in high-voltage applications?
The device is rated for a maximum drain-source voltage of 400 V and a continuous drain current of 120 mA. These ratings make it suitable for controlling signal and auxiliary circuits in off-line power supplies, PLC input protection, and 300–400 V DC bus monitoring tasks where low current switching is required.
How does the 25 Ω on-resistance of the DN2540N3-G-P003 affect power dissipation at its rated current?
At the full rated drain current of 120 mA, the 25 Ω maximum on-resistance produces a conduction loss of approximately 360 mW (P = I² × R = 0.12² × 25). Designers must ensure adequate thermal management for the TO-92-3 package, which typically handles 350–625 mW depending on PCB copper area and ambient temperature.
In a constant-current source configuration, how is the DN2540N3-G-P003 connected and what current does it set?
By shorting the gate to the source pin (Vgs = 0 V), the device acts as a 2-terminal constant-current limiter. The self-limiting drain current is approximately 120 mA at the pinch-off region, making it straightforward to implement stable current references or inrush limiters in circuits up to 400 V without any additional control circuitry.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0200 | $1.02 |
| 25+ | $0.8600 | $21.50 |
| 100+ | $0.7800 | $78.00 |
| 500+ | $0.7690 | $384.50 |
| 1000+ | $0.7600 | $760.00 |
| 5000+ | $0.7500 | $3750.00 |
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