DMN6040SFDE-7 Diodes Inc. MOSFET (N-Channel) (Other) In Stock
Diodes Inc. DMN6040SFDE-7 is an N-channel MOSFET in U-DFN2020-6 package with 60 V breakdown voltage, 5.3 A drain current, 38 mΩ on-resistance, and built-in body diode. Designed for compact load switching and motor drive applications. Available in stock worldwide with fast shipping.
- Manufacturer
- Diodes Inc.
- Package
- Other
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- DMN6040SFDE-7 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.2040(MOQ 100)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 60 V drain-source breakdown voltage with 5.3 A continuous drain current in ultra-compact U-DFN2020-6 (2.0 mm × 2.0 mm) package
- 38 mΩ maximum RDS(on) for low conduction loss in battery-powered and automotive load switch applications
- Built-in body diode with 10 mJ avalanche energy rating (Eas) for robust protection against inductive load switching transients
Applications
The DMN6040SFDE-7 N-channel MOSFET is suited for load switching, battery protection circuits, and DC motor drive applications in portable electronics and automotive subsystems. Its 60 V rating and 38 mΩ RDS(on) allow efficient switching of 12 V to 48 V inductive loads with minimal conduction losses at currents up to 5.3 A. The U-DFN2020-6 package at 2.0 mm × 2.0 mm enables high-density PCB integration in space-constrained power management modules and LED driver boards.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 12Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 10mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 5.3A |
| Drain-source On Resistance-Max | 0.038Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 44pF |
| JESD-30 Code | S-PDSO-N6 |
| JESD-609 Code | e4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.03W |
| Pulsed Drain Current-Max (IDM) | 30A |
| Reference Standard | MIL-STD-202 |
| Surface Mount | YES |
| Terminal Finish | NICKEL PALLADIUM GOLD |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How much conduction loss does DMN6040SFDE-7 generate at 3 A drain current in a 12 V load switch?
At 3 A with RDS(on) maximum of 38 mΩ, conduction power loss is P = I² × RDS(on) = (3)² × 0.038 = 342 mW. The U-DFN2020-6 package has a junction-to-ambient thermal resistance of approximately 60°C/W, causing a junction temperature rise of 342 mW × 60°C/W ≈ 20°C above ambient, so at 25°C ambient the junction reaches approximately 45°C — well within the 150°C maximum junction temperature rating.
Can DMN6040SFDE-7 withstand the inductive kick when switching a 12 V relay coil with 50 mH inductance?
Yes. The avalanche energy rating of the DMN6040SFDE-7 is 10 mJ. A 50 mH relay coil carrying 300 mA at switch-off stores E = ½ × L × I² = ½ × 0.05 × (0.3)² = 2.25 mJ, safely below the 10 mJ Eas limit. The built-in body diode also provides a freewheeling path for inductive flyback, and the 60 V drain-source breakdown voltage clamps the spike well above a 12 V supply.
What gate drive voltage does DMN6040SFDE-7 require for full enhancement in a 3.3 V logic-controlled circuit?
The DMN6040SFDE-7 is a standard-threshold MOSFET. Its VGS(th) is typically 1.2 V to 2.0 V, and at VGS = 4.5 V the RDS(on) is characterized at 38 mΩ maximum. At 3.3 V gate drive, the device turns on but RDS(on) rises above the 38 mΩ spec by approximately 20–30%. For guaranteed fully-enhanced switching at 3.3 V logic levels, a logic-level MOSFET with VGS(th) below 1.5 V or a gate driver boosting to 5 V is recommended.
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Diode
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.3850 | $38.50 |
| 250+ | $0.3480 | $87.00 |
| 500+ | $0.2953 | $147.64 |
| 1000+ | $0.2664 | $266.37 |
| 3000+ | $0.2170 | $651.00 |
| 6000+ | $0.2040 | $1224.00 |
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