STMicroelectronics

STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

801

Total Products

25

Categories

All STMicroelectronics Components

Showing 101150 of 801

BZW06-15Diode

TVS Diode Uni-Directional BZW06-15 32.5V, 600W, DO-15 2-Pin

BZW06-19BTVS Diode (Bi-directional)

TVS Diode Bi-Directional BZW06-19B 39.3V, 600W, DO-15 2-Pin

E-L6561Integrated Circuit

E-L6561, Power Factor Controller, 18 V, 8-Pin, PDIP

E-L6219DSIntegrated Circuit

STMicroelectronics 1 A Bipolar Stepper Drive, 7V

BZW50-120BTVS Diode (Bi-directional)

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

BZW50-27TVS Diode (Uni-directional)

5000 W, 27 V TVS in DO-15

D44H11Transistor BJT NPN

D44H11, NPN Bipolar Transistor, 20 A 80 V HFE:40 Power, 3-Pin TO-220

BZW06-10Diode

TVS Diode Uni-Directional BZW06-10 21.7V, 600W, DO-15 2-Pin

BZW50-33TVS Diode (Uni-directional)

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

BZW50-15TVS Diode (Uni-directional)

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

BZW50-33BTVS Diode (Bi-directional)

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

L6932D1.2Integrated Circuit

SOP-8

BZW06-15BTVS Diode (Bi-directional)

TVS Diode Bi-Directional BZW06-15B 32.5V, 600W, DO-15 2-Pin

BZW50-22TVS Diode (Uni-directional)

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

TSV994AIPTIntegrated Circuit

High bandwidth (20 MHz for gain ≥ 4) micro-power (820 μA) rail-to-rail 5 V op amps

BZW04-13BTVS Diode (Bi-directional)

TVS Diode Bi-Directional BZW04-13B 27.2V, 400W, DO-15 2-Pin

BZW50-12BTVS Diode (Bi-directional)

Peak pulse power: – 5000 W (10/1000 μs) – up to 60 kW (8/20 μs) • Stand-off voltage range from 12 V to 180 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 3700 W (10/1000 µs) • Lead finishing: matte tin plating

BZW06-376BTVS Diode (Bi-directional)

TVS Diode Bi-Directional BZW06-376B 776V, 600W, DO-15 2-Pin

BZW06-28BTVS Diode (Bi-directional)

TVS Diode Bi-Directional BZW06-28B 59V, 600W, DO-15 2-Pin

BZW06-33BTVS Diode (Bi-directional)

TVS Diode Bi-Directional BZW06-33B 69.7V, 600W, DO-15 2-Pin

BUF420AWTransistor BJT NPN

TO-247, 3 PIN

BZW06-13Diode

TVS Diode Uni-Directional BZW06-13 27.2V, 600W, DO-15 2-Pin

BZW06-23BTVS Diode (Bi-directional)

TVS Diode Bi-Directional BZW06-23B 48.3V, 600W, DO-15 2-Pin

BUL49DTransistor BJT NPN

BUL49D, NPN Bipolar Transistor, 5 A 450 V HFE:4 Power, 3-Pin TO-220

BUV48ATransistor BJT NPN

BUV48A, NPN Bipolar Transistor, 15 A 1000 V HFE:8 Power NPN Transistor, 3-Pin TO-247

BZW04-15TVS Diode (Uni-directional)

TVS Diode Uni-Directional BZW04-15 32.5V, 400W, DO-15 2-Pin

VIPER12AS-EIntegrated Circuit

Low power offline switched-mode power supply primary switcher

BZW04-48BTVS Diode (Bi-directional)

400 W, 47.8 V TVS in DO-15

BTB10-600BWRGTransistor

TRIAC BTB10-600BWRG, 600V, Gate Trigger 1.3V 50mA, TO-220AB 3-Pin

BTB24-600CWRGTriac MT

The BTB24-600CWRG is a 24 A, 600 V TRIAC from STMicroelectronics with a gate trigger voltage of 1.3 V and trigger current of 35 mA. It features a TO-220AB 3-pin through-hole package suitable for AC power switching. Available in stock with worldwide shipping.

BTB24-800BWRGTriac A

TRIAC BTB24-800BWRG, 800V, Gate Trigger 1.3V 50mA 3-Pin

BTW69-1200RGSCR

SCR Thyristor BTW69-1200RG, 1200V 32A 80mA, TOP Insulated 3-Pin

BUL216Transistor BJT NPN

BUL216, NPN Bipolar Transistor, 4 A 800 V HFE:10 Power, 3-Pin TO-220

BUX87Transistor BJT NPN

TO-126, 3 PIN

BUL58DTransistor BJT NPN

BUL58D, NPN Bipolar Transistor, 8 A 450 V HFE:5 Power, 3-Pin TO-220

BTW69-800RGSCR

SCR 800 V 50 A Standard Recovery Through Hole TOP3, 10 µA, 150 mA, -40°C ~ 125°C

BUL128D-BTransistor BJT NPN

TO-220, 3 PIN

BTB16-600BWRGTriac A

ROHS COMPLIANT, PLASTIC PACKAGE-3

BU508AWTransistor BJT NPN

High voltage NPN power transistor for standard definition CRT display

BU941ZPFITransistor BJT NPN

ROHS COMPLIANT, TO-3PF, 3 PIN

BTB24-600BWRGTriac MT

TRIAC BTB24-600BWRG, 600V, Gate Trigger 1.3V 50mA, TO-220AB 3-Pin

BTA08-600CRGTriac A

ISOLATED TO-220AB, 3 PIN

BTB16-600CWRGTransistor

TRIAC BTB16-600CWRG, 600V, Gate Trigger 1.3V 35mA, TO-220AB 3-Pin

BTB16-800CWRGTriac A

TRIAC BTB16-800CWRG, 800V, Gate Trigger 1.3V 35mA, TO-220AB 3-Pin

BDW94CTransistor BJT PNP

BDW94C, Darlington Transistor, PNP 12 A 100 V HFE:100, 3-Pin, TO-220

BTA10-600CWRGTriac A

TRIAC BTA10-600CWRG, 800V, Gate Trigger 1.3V 35mA, TO-220AB 3-Pin

BTB08-600TWRGIntegrated Circuit

TRIAC BTB08-600TWRG, 600V, Gate Trigger 1.3V 5mA, TO-220AB 3-Pin

BTB08-600BWRGTriac MT

TRIAC BTB08-600BWRG, 600V, Gate Trigger 1.3V 50mA, TO-220AB 3-Pin

BD677Integrated Circuit

BD677, Darlington Transistor, NPN 4 A 60 V HFE:750, 3-Pin, SOT-32

BTA40-600BIntegrated Circuit

RD91, 3 PIN

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