ON Semiconductor

ON Semiconductor

ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.

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All ON Semiconductor Components

Showing 4,2514,300 of 4,313

1N5333BRLGDiodes, Axial Diameter Horizontal Mounting
1N5333BRLGDiode

POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode.; Maximum Limits Guaranteed on Seven Electrical Parameters; CASE: Void-free, transfer-molded, thermo-setting plastic; MOUNTING POSITION: Any; Up to 180 Watt Surge Rating @ 8.3 ms; FINISH: All external surfaces are corrosion resistant and leads are readily solderable; WEIGHT: 0.7 gram (approx); Pb-Free Packages are Available

1N5333BGDiodes, Axial Diameter Horizontal Mounting
1N5333BGDiode

POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode.; Maximum Limits Guaranteed on Seven Electrical Parameters; CASE: Void-free, transfer-molded, thermo-setting plastic; MOUNTING POSITION: Any; Up to 180 Watt Surge Rating @ 8.3 ms; FINISH: All external surfaces are corrosion resistant and leads are readily solderable; WEIGHT: 0.7 gram (approx); Pb-Free Packages are Available

NL17SZ08DBVT1GSOT23 (5-Pin)
NL17SZ08DBVT1GIntegrated Circuit

Tiny SOT-353 and SOT-553 Packages; 2.7 ns TPD at 5 Volts (typ); Source/Sink 24 mA at 3.0 Volts; Over-voltage tolerant Inputs; Pin For Pin with NC7SZ08P5X, TC7SZ08FU and TC7SZ08AFE; Chip Complexity: FETs = 20; Designed for 1.65 V to 5.5 V VCC operation; Pb-Free Packages are Available; Wide Operating Vcc Range

MC74VHC1G14DBVT1GSOT23 (5-Pin)
MC74VHC1G14DBVT1GIntegrated Circuit

Designed for 1.65 V to 5.5 V Vcc Operatio; High Speed: tPD = 3.5ns (Typ) at VCC = 5V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; Power Down Protection Provided on Inputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = ≤ 100; Pb-Free Packages are Available

CPH3240-TL-ESOT23 (3-Pin)
CPH3240-TL-ETransistor BJT NPN

Adoption of FBIT, MBIT processes; High breakdown voltage and large current capacity; High-speed switching; Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs

NCP1342AMDCDAD1R2GOther
NCP1342AMDCDAD1R2GIntegrated Circuit

QR Frequency Jittering; Quiet-Skip Technology; Integrated HV Startup with Brownout Protection; Valley Switching Operation with Valley Lockout; Integrated X2 Capacitor Discharge Capability; NTC Compatible Fault Pin; High Drive Capability: -500 mA / +800 mA; Latch input for OVP and OTP implementation; Minimum Peak Current Modulation for Rapid Frequency Foldback (RFF)

NCP1096PAR2GSmall Outline Packages
NCP1096PAR2GIntegrated Circuit

IEEE 802.3bt, IEEE 802.3at, IEEE 802.3af compliant - Allows for up to 90 W of power - Guaranteed interoperability between PoE devices; Part of ON Semiconductor’s family of high efficiency solutions for PoE-PD; Features an internal 71 mΩ pass transistor to support high-power applications; 5-Event Physical Layer Classification; Smart power budgeting using Autoclass support which allows the PSE to assign power to each PD efficiently; Active bridge and hot-swap FET disable when Auxililary supply connected, incr

NVMJS2D5N06CLTWGOther
NVMJS2D5N06CLTWGMOSFET (N-Channel)

LFPAK-8

LC898302AXA-MHBGA
LC898302AXA-MHIntegrated Circuit

ON Semiconductor LC898302AXA-MH is a single-chip 3-phase brushless DC motor controller with up to 0.2 A output current in a BGA package. Integrates drive and control logic for compact motor drive designs. Available from stock with worldwide shipping.

ATP101-TL-HOther
ATP101-TL-HTransistor

HALOGEN AND LEAD FREE, ATPAK-3

FDPF12N60NZTransistor Outline, Vertical
FDPF12N60NZMOSFET (N-Channel)

RoHS compliant; RDS(on) = 530mΩ ( Typ.)@ VGS = 10V, ID = 6A; Low Crss ( Typ. 12pF); Low gate charge ( Typ. 26nC); 100% avalanche tested; ESD improved capability; Improved dv/dt capability

FDMC7692SOther
FDMC7692SMOSFET (N-Channel)

Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10.4 A; Termination is Lead-free and RoHS Compliant; Max rDS(on) = 9.3 mΩ at VGS = 10 V, ID = 12.5 A; High performance technology for extremely low rDS(on)

FSA8049UCXBGA
FSA8049UCXIntegrated Circuit

WLCSP-9

2N4403BUOther
2N4403BUIntegrated Circuit

High gain; Pb-Free Packages

ISL9R3060G2Transistor Outline, Vertical
ISL9R3060G2Diode

Use the download button to access the ISL9R3060G2 schematic symbol, PCB footprint, and 3D model.

1N4757ADiodes, Axial Diameter Horizontal Mounting
1N4757AZener Diode

Zener Voltage Range - 3.3 V to 91 V; ESD Rating of Class 3 (>16 KV) per Human Body Model; DO-41 (DO-204AL) Package; Double Slug Type Construction; Metallurgical Bonded Construction; Oxide Passivated Die Mechanical Characteristics:; CASE: Double slug type, hermetically sealed glass; FINISH: All external surfaces are corrosion resistant and leads are readily solderable; MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16" from the case for 10 seconds; POLARITY: Cathode indicated by polarity band; MOU

KA3842BDual-In-Line Packages
KA3842BIntegrated Circuit

IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR,DIP,8PIN,PLASTIC ROHS COMPLIANT: YES

FSA2269UMXQuad Flat No-Lead
FSA2269UMXIntegrated Circuit

ON Semiconductor FSA2269UMX is a low-voltage dual SPDT analog switch with 0.4Ω on-resistance in a compact QFN-10 package. It supports single-supply operation and delivers wide signal bandwidth for audio and data routing applications. Available from stock worldwide with competitive pricing and fast shipping.

BD236Transistor Outline, Vertical
BD236Transistor BJT PNP

ON Semiconductor PNP/2A/60V TO-126

NSVS50030SB3T1GSOT23 (3-Pin)
NSVS50030SB3T1GSchottky Diode

Large Current Capacitance; Low Collector to Emitter Saturation Voltage; High-Speed Switching; High Allowable Power Dissipation; AEC-Q101qualified and PPAP capable; Ultra small package facilitates miniaturization in end products (mounting height : 0.9 mm)

FXLA0104QFXOther
FXLA0104QFXConnector

ESD Protection Exceeds:; Non-Preferential Power-Up; Either VCC May Be Powered Up First; Control Input (OE) Referenced to VCCA Voltage; 6kV HBM (per JESD22-A114 & Mil Std 883e3015.7); Bi-Directional Interface between Two Levels: from 1.1V to 3.6V; 100Mbps Throughput when Translating Between 1.8V and 2.5V; Outputs Switch to 3-State if Either VCC is at GND; Available in the 12-Lead, 1.7mm x 2.0mm UMLP Package; Bus-Hold on Data Inputs Eliminates the Need for Pull-Up Resistors; Do Not Use Pull-Up Resistors on A

HUFA76419D3STOther
HUFA76419D3STIntegrated Circuit

Peak Current vs Pulse Width Curve; Ultra Low On-Resistance - rDS(ON) = 0.037 Ω, VGS = 10 V - rDS(ON) = 0.043 Ω, VGS = 5 V; Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models; UIS Rating Curve; Switching Time vs RGS Curves

NSR0320XV6T1GSO Transistor Flat Lead
NSR0320XV6T1GDiode

NSR0320XV6T1G is a Use the download button to access the NSR0320XV6T1G schematic symbol, PCB footprint, and 3D model. by ON Semiconductor. Key specs: 6 pins, 463A, SO Transistor Flat Lead. From inquiry pricing, available through FindMyChip sourcing with worldwide shipping.

ISL9V5036P3-F085Transistor Outline, Vertical
ISL9V5036P3-F085Transistor IGBT

ISL9V5036P3-F085 is a single N-channel IGBT from ON Semiconductor featuring a 360 V collector-emitter voltage and 46 A maximum collector current. Packaged in a TO-3P vertical outline with integrated diode and resistor, it delivers fast switching for power conversion. Available with worldwide shipping from authorized distributors.

MICROFJ-30020-TSV-TR1Other
MICROFJ-30020-TSV-TR1Photodiode

High-density microcells; Optimized for high-performance timing applications, such as ToF-PET; Ultra-low dark count rates of 50 kHz/mm2 typical; J-Series sensors feature ON Semiconductor's unique 'fast output' terminal; Exceptional breakdown voltage uniformity of ±250 mV; Temperature stability of 21.5 mV/°C; 3 mm, 4 mm and 6 mm sensor sizes; Available in a reflow solder compatible TSV chip-scale package; Bias voltage of <30 V

NTD24N06Other
NTD24N06MOSFET (N-Channel)

NTD24N06 is a ON Semiconductor transistor for board-level electronic assemblies. Key specs include 3 pins and 175 °C maximum operating temperature. From RFQ pricing, FindMyChip supports stock checks and worldwide shipping.

FDS6692ASmall Outline Packages
FDS6692AMOSFET (N-Channel)

FDS6692A is a ON Semiconductor capacitor for power filtering, decoupling, timing, and energy-storage sections of electronic assemblies. Key details include 8 pins, Small Outline Packages, and datasheet-backed parameters. Available through FindMyChip sourcing with worldwide shipping support.

NCP347MTAHTBGOther
NCP347MTAHTBGIntegrated Circuit

ON Semiconductor NCP347MTAHTBG is a positive overvoltage protection controller with an integrated low-RON NMOS FET and status flag output, protecting sensitive loads in single-channel battery management and power-supply designs from overvoltage faults.

KA324ADual-In-Line Packages
KA324AIntegrated Circuit

KA324A is a ON Semiconductor integrated circuit for board-level electronic assemblies. Key specs include 14 pins and 70 °C maximum operating temperature. From RFQ pricing, FindMyChip supports stock checks and worldwide shipping.

MMSD4148T1Small Outline Diode
MMSD4148T1Diode

Obsolete - Small Signal Diode

FSA2269TSUMXOther
FSA2269TSUMXIntegrated Circuit

FSA2269TSUMX is a ON Semiconductor integrated circuit for industrial electronics and embedded systems. Key specs include 10 pins, -40 deg C to 85 deg C, and VQCCN. From quoted pricing with in stock worldwide shipping.

ISL9R860S3STOther
ISL9R860S3STIntegrated Circuit

ISL9R860S3ST is a ON Semiconductor integrated circuit for industrial electronics and embedded systems. Key specs include 430 V, 3 pins, and D2PAK-3 / TO-263-2. From quoted pricing with in stock worldwide shipping support.

FDLL300AOther
FDLL300AIntegrated Circuit

FDLL300A from ON Semiconductor is a integrated circuit for industrial, consumer, and embedded electronic assemblies. Key specs include 6 pins, 175°C maximum, and manufacturer package geometry. RFQ sourcing supports in-stock checks and worldwide shipping.

MC74HCT138ADTR2GSmall Outline Packages
MC74HCT138ADTR2GIntegrated Circuit

Output Drive Capability: 10 LSTTL Loads; TTL/NMOS Compatible Input Levels; Outputs Directly Interface to CMOS, NMOS, and TTL; Operating Voltage Range: 4.5 to 5.5 V; In Compliance with the Requirements Defined by JEDEC Standard No. 7A; Chip Complexity: 122 FETs or 30.5 Equivalent Gates; Low Input Current: 1.0 µA; Pb-Free Packages are Available*

FXLP4555MPXQuad Flat No-Lead
FXLP4555MPXIntegrated Circuit

Low-Profile 3x3mm MLP-16 Package; Supports 1.8V or 3.0V SIM Cards; LDO Supplies >50mA Under 1.8V and 3.0V; Built-in Pull-up Resistor for I/O Pin in Both Directions; Supports Clock ≥5MHz; Supports "Clock Stop" Power Management per ISO7816-3 Specifications; ESD Protection: 8kV (Human Body Model, According to ISO-7816 Specifications)

NSR0320MW2T3GSmall Outline Diode
NSR0320MW2T3GSchottky Diode

Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc; High Current Capability; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

FIN1027AMXSmall Outline Packages
FIN1027AMXIntegrated Circuit

Greater than 600Mbs Data Rate ; 3V Power Supply Operation ; Flow-through Pinout Simplifies PCB Layout; Meets or Exceeds the TIA/EIA-644 LVDS Standard ; Low Power Dissipation ; 1.5ns Maximum Propagation Delay ; Power-Off Protection ; 0.5ns Maximum Differential Pulse Skew

NLSX3018DTR2GSmall Outline Packages
NLSX3018DTR2GIntegrated Circuit

NLSX3018DTR2G is a ON Semiconductor integrated circuit for embedded electronics, industrial modules, and repair BOMs. Key specs include 20 pins, TSSOP 20 LEAD, -40°C to 85°C operating range. From RFQ pricing with in-stock sourcing and worldwide shipping support.

MBR1545CTTransistor Outline, Vertical
MBR1545CTDiode

MBR1545CT is a ON Semiconductor diode for rectification, reverse-polarity protection, and power switching circuits. Key specs include 3 pins, 45 V, TO-220AB, -65°C to 150°C operating range. From RFQ pricing with in-stock sourcing and worldwide shipping support.

BC33725TAROther
BC33725TARTransistor BJT NPN

These are PbFree Devices

FSA66P5XSOT23 (5-Pin)
FSA66P5XSwitch

FSA66P5X from ON Semiconductor is a signal-interface IC for communications, signal routing, and interface protection designs. Key specs include 5 pins, -40°C to 85°C, and SOT23 (5-Pin). RFQ sourcing supports in-stock checks and worldwide shipping.

MC14001BCPDual-In-Line Packages
MC14001BCPIntegrated Circuit

MC14001BCP is a quad 2-input NOR gate CMOS logic IC from the 4000-series family with 4 independent gates in a 14-pin plastic DIP package, rated for a 50pF load capacitance and 8.8mA maximum output low current. Wide supply voltage range and high noise immunity make it suitable for industrial and educational logic design. Available from stock with worldwide shipping.

MT9M114EBLSTCZ-CRBGA
MT9M114EBLSTCZ-CRIntegrated Circuit

ON Semiconductor MT9M114EBLSTCZ-CR is a 1-megapixel CMOS digital image sensor with 1296 x 976 pixel resolution, 120 fps frame rate, and 70.8 dB dynamic range in a BGA package. Delivers high-quality video for embedded vision applications with surface mount integration. Available from stock with worldwide shipping.

MMBT4401M3T5GOther
MMBT4401M3T5GTransistor BJT NPN

MMBT4401M3T5G is an NPN bipolar junction transistor (BJT) from ON Semiconductor in a compact SOT-723 3-pin package. It features a 40 V collector-emitter voltage, 600 mA collector current, and a minimum DC current gain (hFE) of 100. Suitable for switching and amplification in space-constrained consumer electronics and signal processing circuits.

MMSZ5240BT1Small Outline Diode
MMSZ5240BT1Zener Diode

ON Semiconductor MMSZ5240BT1 is a single silicon zener diode in an SOD-123 (Small Outline Diode) surface-mount package, rated for voltage regulation with a maximum dynamic impedance of 17 Ω. Note: this part is listed as obsolete and is not REACH compliant. Remaining stock may be available through distributors worldwide.

BC369Other
BC369Integrated Circuit

Obsolete - PNP Bipolar Transistor

MC74HC163ADGSmall Outline Packages
MC74HC163ADGIntegrated Circuit

Low Input Current: 1.0 mA; Operating Voltage Range: 2.0 to 6.0 V; Outputs Directly Interface to CMOS, NMOS, and TTL; Output Drive Capability: 10 LSTTL Loads; High Noise Immunity Characteristic of CMOS Devices; In Compliance with the Requirements Defined by JEDEC Standard No. 7A; Chip Complexity: 192 FETs or 48 Equivalent Gates; Pb-Free Packages are Available*

MMQA12VT1GSOT23 (6-Pin)
MMQA12VT1GDiode

Small Package Size for High Density Applications; FINISH:Corrosion Resistant Finish, Easily Solderable; Package Designed for Optimal Automated Board Assembly; Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace with "T3" in the Device Number to order the 13 inch/10,000 unit reel.; Low Leakage < 2.0 mA; SC-59 Package Allows Four Separate Unidirectional Configurations; CASE:Void Free, Transfer-Molded, Thermosetting Plastic Case; Peak Power - Min. 24 W @ 1.0 ms (U

NCV7441D20GSmall Outline Packages
NCV7441D20GIntegrated Circuit

ON Semiconductor NCV7441D20G is a dual-channel CAN transceiver supporting up to 1 Mbit/s data rates, compliant with ISO 11898-2, ISO 11898-5, and SAE J2284 standards, housed in a 14-pin SOIC package for automotive and industrial CAN network designs.

2SC5227A-4-TB-ESOT23 (3-Pin)
2SC5227A-4-TB-EIntegrated Circuit

Low-noise : NF = 1.0 dB typ (f = 1 GHz); High gain : Forward Transfer Gain = 12 dB typ (f = 1 GHz); High cut-off frequency : fT = 7 GHz typ

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