ON Semiconductor

Low power ; Bell 202 shift frequencies of 1200 Hz and 2200 Hz; Single-chip, half-duplex 1200 bits per second FSK modem; Transmit-signal wave shaping; Receive band-pass filter; Meets HART physical layer requirements; CMOS compatible

TO-220F-3FS, 3 PIN

ON Semiconductor A5191HRTNG-XTD, Modem HART Protocol Modem FSK, 3.3 V, 5 V, 1.2kbit/s, 32-Pin, QFN

ESD Protected; Low RDS(on); Small Footprint Surface Mount Package; 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Use the download button to access the 2V7002LT1G schematic symbol, PCB footprint, and 3D model.

SOT-23, 3 PIN

ON Semiconductor 2SK3666-3-TB-E N-channel JFET Transistor, 30 V, Idss 1.2 → 3mA, 3-Pin CP

LEAD FREE, SC-63, 3/2 PIN

HALOGEN AND LEAD FREE, SC-63, 3/2 PIN

Bipolar Transistor

Low collector-to-emitter saturation voltage; Excllent linearity of hFE; Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim; Fast switching time; High fT

LEAD FREE, ULTRA SMALL, SC-59, CP, 3 PIN

Low ON-resistance.Low input capacitance.ultrahigh-speed switching.; High reliability by the adoption of HVP process.; Attachment workability is good by Mica-less package.; Avaianche resistance guarantee.

High current capacitance; Low collector-to-emitter saturation voltage; High-speed switching; Adoption of FBET, MBIT process; High allowable power dissipation

SC-67, TO-220F, 3 PIN

SC-94, TO-3PF, 3 PIN

SOT-23, 3 PIN

ON Semiconductor 2SK3666-2-TB-E N-channel JFET Transistor, 30 V, Idss 0.6 → 1.5mA, 3-Pin SOT-23

Adoption of FBET and MBIT processes; Large current capacitance; Low collector-to-emitter saturation voltage; High-speed switching; High allowable power dissipation

LEAD FREE, ULTRA SMALL, SC-59, CP, 3 PIN

DPAK-3/2

Use the download button to access the 2N7002LT3G schematic symbol, PCB footprint, and 3D model.

High fT : (fT=3.5GHz typ); Large current : (IC=300mA); Large allowable collector dissipation (1.3W max)

Adoption of FBET, MBIT processes; High breakdown voltage and large current capacity; Fast switching speed; Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact

Obsolete - Power 8A 80V Darlington PNP

Adoption of FBET, MBIT processes; High voltage and large current capacity.; Ultrahigh-speed switching.; Small and slim package permitting 2SA1552/2SC4027-applied sets to be made more compact.

Use the download button to access the 2SA1705S-AN schematic symbol, PCB footprint, and 3D model.

High DC Current Gain - hFE=2500 (Typ) @Ic=4.0 Adc ; Collector-Emitter Sustaining Voltage - @ 100 mAdc Vceo(sus) = 60 Vdc (Min) - 2N6387 Vceo (sus) = 80 Vdc (Min) - 2N6388; Collector-Emitter Sustaining Voltage - @ 100 mAdc Vceo(sus) = 60 Vdc (Min) - 2N6387 Vceo (sus) = 80 Vdc (Min) - 2N6388; Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; T0-220AB Compact Package; Epoxy meets UL94, VO @ 1/8 inch; ESD Ratings

THY T0220 16A 600V SCR LEAD FREE

LEAD FREE, CASE 221A-07, 3 PIN

DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc; Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491; High Current Gain--Bandwidth Product fT = 5.0 MHz (Min) @ IC = 1.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available

DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc; Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491; High Current Gain--Bandwidth Product fT = 5.0 MHz (Min) @ IC = 1.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available

DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices; TO-220AB Compact Package; High Current Gain Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11; Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292; Pb-Free Packages are Available

2N6403TG, SCR 16 A 400 V

DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices; TO-220AB Compact Package; High Current Gain Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11; Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292; Pb-Free Packages are Available

Obsolete - 20 A, 80 V PNP Darlington Bipolar Power Transistor

Obsolete - 7.0 A, 30 V PNP Bipolar Power Transistor

Obsolete - 8.0 A, 60 V PNP Darlington Bipolar Power Transistor

Use the download button to access the 2N4401G schematic symbol, PCB footprint, and 3D model.

Use the download button to access the 2N6107G schematic symbol, PCB footprint, and 3D model.

High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44 VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045; Collector-Emitter Sustaining Voltage - @ 100 mAdc - VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044 VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Pb-Free Packages are Available

ON SEMICONDUCTOR - 2N6073BG - TRIAC, 400V, 4A, TO-225

ON SEMICONDUCTOR - 2N6073AG - TRIAC, 4A, 400V, TO-126

Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement to NPN 2N4921, 2N4922, 2N4923; Pb-Free Package is Available

Pb-Free Packages are Available

Use the download button to access the 2N4401RLRAG schematic symbol, PCB footprint, and 3D model.

Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement of PNP 2N4918, 2N4919, 2N4920; Pb-Free Packages are Available

LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN