ON Semiconductor

Tiny SOT-353 and SOT-553 Packages; Source/Sink 24 mA at 3.0 Volts; Over-Voltage Tolerant Inputs and Outputs; Pin For Pin with NC7SZ14; Designed for 1.65 V to 5.5 V VCC Operation; Chip Complexity: FET = <100; Designed for 1.65 V to 5.5 V Vcc Operation

LVCMOS Compatible; Designed for 1.65 V to 5.5 V VCC Operation; Extremely High Speed: tPD 2.6 ns (typical) at VCC = 5 V; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible - Interface Capability With 5 V TTL Logic with VCC = 3 V; 24 mA Balanced Output Sink and Source Capability; Near Zero Static Supply Current Substantially Reduces System Power Requirements; 3-State OE Input is Active HIGH; Replacement for NC7SZ126; Chip Complexity = <100; Pb-Free Package is Available

Designed for 1.65 V to 5.5 V VCC Operation; 24 mA Balanced Output Sink and Source Capability; Extremely High Speed: tPD 2.6 ns (typical) at VCC = 5 V; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible - Interface Capability With 5 V TTL Logic with VCC = 3 V; LVCMOS Compatible; Near Zero Static Supply Current Substantially Reduces System Power Requirements; 3-State OE Input is Active-Low; Replacement for NC7SZ125; Chip Complexity = 36 FETS

Extremely High Speed: tPD 2.5 ns (typical) at VCC = 5 V; Designed for 1.65 V to 5.5 V VCC Operation, CMOS compatible; Over Voltage Tolerant Inputs: Vin may be between 0 and 7V for VCC between 0.5 and 5.5V; TTL Compatible - Interface Capability with 5 V TTL Logic with VCC = 2.7V to 3.6V; 24 mA Output Sink Capability, pull up may be between 0 and 7V; Near Zero Static Supply Current Substantially Reduces System Power Requirements; Chip Complexity: FET = <100; Tiny SOT-353 and SOT-553 Packages; Pb-Free Packages

Designed for 1.65 V to 5.5 V VCC Operation; 24 mA Balanced Output Sink and Source Capability; Extremely High Speed: tPD 2.6 ns (typical) at VCC = 5 V; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible - Interface Capability With 5 V TTL Logic with VCC = 3 V; LVCMOS Compatible; Near Zero Static Supply Current Substantially Reduces System Power Requirements; 3-State OE Input is Active-Low; Replacement for NC7SZ125; Chip Complexity = 36 FETS

LVCMOS Compatible; Designed for 1.65 V to 5.5 V VCC Operation; Extremely High Speed: tPD 2.6 ns (typical) at VCC = 5 V; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible - Interface Capability With 5 V TTL Logic with VCC = 3 V; 24 mA Balanced Output Sink and Source Capability; Near Zero Static Supply Current Substantially Reduces System Power Requirements; 3-State OE Input is Active HIGH; Replacement for NC7SZ126; Chip Complexity = <100; Pb-Free Package is Available

Extremely high-speed: 1.5 nS (typ) @VCC 3.3V; Designed for 0.9 to 3.3 volt operation; Over Voltage Tolerance (OVT) inputs, permits Logic translation; Balanced ± 24 mA output drive @ 3.3 volts; Near zero static supply current; Ultra-tiny SOT-553, 5-pin package, only 1.6 x 1.6 x .6 mm

Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Obsolete - Single Buffer

Tiny SOT-353 andSOT-553 Packages; 24 mA balanced output sink and source capability; Over-Voltage Tolerant Inputs and Outputs; Pin For Pin with NC7SZ04P5X, TC7SZ04FU, and TC7SZ04AFE; Chip Complexity: FETs = <100; Designed for 1.65 V to 5.5 V VCC; Pb-Free Packages are Available

TO-3P, 3 PIN

Tiny SOT-353 and SOT553 Packages; 2.7 ns TPD at 5 Volts (typ); Designed for 1.65 V to 5.5 V VCC; Source/Sink 24 mA at 3.0 Volts; Over-Voltage Tolerant Inputs; Pin For Pin with NC7SZ00P5X, TC7SZ00FU, and TC7SZ00AFE; Chip Complexity: FETs = <100; Pb-Free Packages are Available

4.0 A, 350 V NPN Darlington Bipolar Power Transistor

Use the download button to access the NJVMJD122T4G schematic symbol and PCB footprint.

Exceptional Safe Operating Area; NPN/PNP Gain Matching within 10% from 50mA to 3A; Excellent Gain Linearity; High VCE; High frequency

Wide Operating VCC Range: 0.9 V to 3.6 V; High Speed: tPD = 2.4 ns (Typ) at VCC = 3.0 V, CL = 15 pF; Low Power Dissipation: ICC = 0.5 uA (Max) at TA = 25C; 4.6 V Overvoltage Tolerant (OVT) Input Pins; UltraSmall Packages; These are PbFree and HalideFree Devices

Tiny SOT-353 andSOT-553 Packages; 24 mA balanced output sink and source capability; Over-Voltage Tolerant Inputs and Outputs; Pin For Pin with NC7SZ04P5X, TC7SZ04FU, and TC7SZ04AFE; Chip Complexity: FETs = <100; Designed for 1.65 V to 5.5 V VCC; Pb-Free Packages are Available

Exceptional Safe Operating Area; NPN/PNP Gain Matching within 10% from 50mA to 5A; Excellent Gain Linearity; High VCEO of 250 V; High frequency

Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

TO-3P, 3 PIN

Auto Retry Option; Power Device Thermally Protected; No External Current Shunt Required; Internal Charge Pump; Internal Undervoltage Lockout Circuit; Internal Overvoltage Clamp; ESD Ratings: Human body Model (HBM): 2000V Machine Model (MM): 200V; These are Pb-Free Devices; 68 mohm Typical; Integrated Power Device

Thermally matched bias diode to eliminate thermal runaway; Instant thermal bias tracking for superior sound quality; Absolute Thermal Integrity; High safe operating area; Pb-Free Packages are Available

Use the download button to access the NGTG50N60FWG schematic symbol, PCB footprint, and 3D model.

Thermally matched bias diode to eliminate thermal runaway; Instant thermal bias tracking for superior sound quality; Absolute Thermal Integrity; High safe operating area; Pb-Free Packages are Available

DPAK-3

• Integrated Power Device • Power Device Thermally Protected • No External Current Shunt Required • 68 m Typical • Internal Charge Pump • Internal Undervoltage Lockout Circuit • Internal Overvoltage Clamp

Use the download button to access the NGTG30N60FLWG schematic symbol, PCB footprint, and 3D model.

Integrated Power Device • Power Device Thermally Protected • No External Current Shunt Required • 9 V to 18 V Input Range • 44 m Typical • Internal Charge Pump • Internal Undervoltage Lockout Circuit • Internal Overvoltage Clamp (MN1 and MN2 versions) • ESD Ratings: Human Body Model (HBM); 2000 V Machine Model (MM); 200 V • These Devices are Pb−Free and are RoHS Compliant

Use the download button to access the NGTB40N120FL2WG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NIS5112D1R2G schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NGTB50N60FLWG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NGTG15N60S1EG schematic symbol, PCB footprint, and 3D model.

Diode Clamp Between Gate and Source; ESD Protection - HBM 5000 V; Active Over - Voltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance

Use the download button to access the NGTG50N60FLWG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NGTB40N60FL2WG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NGTB60N60SWG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NGTG30N60FWG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NGTB50N120FL2WG schematic symbol, PCB footprint, and 3D model.

NGTB40N60FLWG from ON Semiconductor is a Transistor for industrial controls, embedded electronics, maintenance sourcing, and production assemblies. Key specifications include 80A, 600V, 6.5V, 20V, TO-247 package/footprint, supporting reliable selection for OEM maintenance, prototyping, and production BOMs. The TO-247 format supports standard assembly and sourcing workflows.

Last Shipments - IGBT, 1200V, 40A Low VF FSIII

Use the download button to access the NGTB40N135IHRWG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NGTB40N120IHRWG schematic symbol, PCB footprint, and 3D model.

Obsolete - IGBT, 1200V 30A FS2 Low VCEsat

Use the download button to access the NGTB40N120IHLWG schematic symbol, PCB footprint, and 3D model.

NGTB30N120IHRWG from ON Semiconductor is a Transistor for industrial controls, embedded electronics, maintenance sourcing, and production assemblies. Key specifications include 1200V, 30A, 340A, 60A, TO-247 package/footprint, supporting reliable selection for OEM maintenance, prototyping, and production BOMs. The TO-247 format supports standard assembly and sourcing workflows.

Use the download button to access the NGTB30N135IHRWG schematic symbol, PCB footprint, and 3D model.

Obsolete - Power MOSFET 600V 4.8A 2.0 Ohm Single N-Channel TO-220FP

NGTB30N120FL2WG from ON Semiconductor is a connector for board-to-board, cable, panel, and embedded interconnect assemblies. Key specifications include 2W, 340A, 4W, 3 pins, TO-247 package/footprint, supporting reliable selection for OEM maintenance, prototyping, and production BOMs. The TO-247 format supports standard assembly and sourcing workflows.

Use the download button to access the NGTB30N120IHLWG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the NGTB20N135IHRWG schematic symbol, PCB footprint, and 3D model.