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Low RDSon; Low Capacitance; Optimized Gate Charge

Use the download button to access the NTMFS4936NT1G schematic symbol, PCB footprint, and 3D model.

Low Qg and Capacitance; Low Profile UDFN 1.6x1.6x0.55 mm; Low Vf Schottky Diode; Lead Free and Halide Free; ESD Protected Gate

Mosfet Array 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)-55°C ~ 150°C (TJ)

Use the download button to access the NTK3139PT1G schematic symbol, PCB footprint, and 3D model.

SC-88, SC-70-6, 6 PIN

SC-88, SC-70-6, 6 PIN

Ultra Low RDS(on); Higher Efficiency Extending Battery Life; Logic Level Gate Drive; Diode Exhibits High Speed, Soft Recovery; Avalanche Energy Specified; IDSS Specified at Elevated Temperature

TSOP-6

Obsolete - Single P-Channel Power MOSFET -60V -18.5A 140 mΩ

The ON Semiconductor NTB45N06LT4G is a logic-level N-channel power MOSFET rated at 45 A and 60 V in a D2PAK (TO-263) surface-mount package with a built-in body diode and 240 mJ avalanche energy rating. Its low gate threshold enables direct switching from 3.3 V or 5 V microcontroller GPIO pins without a dedicated gate driver in many designs. Available through global distributors with fast worldwide shipping for prototyping and volume production.

Use the download button to access the NTA4151PT1G schematic symbol, PCB footprint, and 3D model.

High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

Gain matched to 10%, Typical 2%; Vbe matched to 2.0 mV typical 0.5 mV; AEC-Q101 Qualified and PPAP Capable; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

CASE 631AA-01, 3 PIN

Very Low Forward Voltage Drop - 410 mV @ 100 mA; Low Reverse Current - 0.5 uA @ 25 V VR; 250 mA of Continuous Forward Current; Power Dissipation of 200 mW with Minimum Trace; Very High Switching Speed; Low Capacitance - CT = 6 pF; This is a Pb-Free Device

Fine Lithography Trench−based Schottky Technology for Very Low; Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; Low Thermal Resistance; High Surge Capability; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; These are Pb−Free and Halide−Free Devices

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Excellent Ability to Withstand Reverse Avalanche Energy Transients; Guardring for Stress Protection Mechanical Characteristics:; Case: Epoxy, Molded, Epoxy Meets UL94, VO; Weight: 217 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max

Use the download button to access the NRVBA1H100T3G schematic symbol, PCB footprint, and 3D model.