UCC27800DRMT Texas Instruments In Stock
UCC27800DRMT is a single-channel, low-side gate driver by Texas Instruments designed for driving SiC and GaN power transistors with fast switching. Key specs: 5 A peak source/sink current, 4 V to 6 V UVLO threshold, 8-pin SOIC package. From stock, in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- —
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- N/A
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 5 A peak source and sink gate drive current with propagation delay below 20 ns, enabling fast turn-on and turn-off of SiC MOSFETs and GaN HEMTs in high-frequency converters
- Negative bias drive capability supports split-supply gate drive down to -4 V for reliable SiC MOSFET threshold management and prevention of parasitic turn-on in half-bridge topologies
- 8-pin SOIC package (DRM) with Miller clamp functionality reduces gate-bounce-induced shoot-through in motor drive and PFC converter switching cells operating at hundreds of kilohertz
Applications
The UCC27800DRMT is designed for low-side gate drive of SiC MOSFETs and GaN power transistors in single-ended and half-bridge topologies used in on-board chargers, solar inverters, and high-efficiency DC/DC converters operating above 100 kHz. Its 5 A peak drive current and negative bias support allow clean, fast switching of wide-bandgap devices with gate threshold voltages requiring -4 V off-state bias for reliable operation. The device also serves industrial motor drives and EV power modules where precise timing and low propagation delay minimize switching losses and improve system efficiency.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What peak gate drive current does the UCC27800DRMT provide, and why is this important for SiC MOSFETs?
The UCC27800DRMT delivers up to 5 A peak sourcing and 5 A peak sinking gate current. SiC MOSFETs typically have gate capacitances of 5 nF to 15 nF, and driving them quickly with 5 A gate current achieves switching transitions in under 50 ns, minimizing crossover losses in converters operating at 100 kHz to 500 kHz and improving overall system efficiency by reducing switching energy per cycle.
How does the UCC27800DRMT's negative bias drive capability prevent parasitic turn-on in half-bridge designs?
In half-bridge converters with SiC MOSFETs, fast dV/dt transients of 50 V/ns or more can couple through the Miller capacitance and induce a spurious gate voltage spike, risking unintended turn-on of the off-state switch. The UCC27800DRMT supports negative gate bias down to -4 V, holding the off-state gate well below the 2 V to 4 V threshold of typical SiC devices, providing a safety margin of 6 V to 8 V against parasitic turn-on without an external negative bias supply.
For a 99% efficiency totem-pole PFC converter at 300 kHz, how does UCC27800DRMT compare to a standard silicon MOSFET driver like UCC27201?
The UCC27800DRMT is optimized for wide-bandgap devices with propagation delays under 20 ns and a negative bias drive capability down to -4 V, neither of which is available in the UCC27201 standard half-bridge driver. At 300 kHz switching frequency in a GaN-based totem-pole PFC, the lower propagation delay reduces dead-time from 100 ns to under 30 ns, recovering approximately 0.5% to 1% efficiency that would otherwise be lost to body-diode conduction in the GaN HEMT.
What is the UVLO threshold of the UCC27800DRMT, and how does it protect the gate drive circuit during power-up?
The UCC27800DRMT has an undervoltage lockout (UVLO) threshold of 4 V to 6 V on its bias supply. During power-up, the driver holds the gate output low until the bias supply exceeds the UVLO turn-on threshold, preventing partial gate enhancement of SiC or GaN devices that could result in uncontrolled conduction. This ensures safe initialization in converter start-up sequences and protects devices with gate threshold voltages near 3 V to 4 V from undefined switching states.
Related Guides
1206 100 uF MLCC Design Guide for Compact Bulk Decoupling
Design guidance for applying CL31A107MQHNNNE and related 1206 MLCCs in compact bulk decoupling networks.
Jul 3, 2026
0402 10 nF MLCC Design Guide for High-Speed Decoupling
Practical design guidance for using CL05B103KB5NNNC and related 0402 MLCCs in high-speed decoupling networks.
Jul 3, 2026
CL31A107MQHNNNE 1206 100 uF MLCC Selection Guide
How to choose CL31A107MQHNNNE and related 1206 MLCCs for low-voltage bulk capacitance and regulator stability.
Jul 2, 2026
CL05B103KB5NNNC 0402 10 nF X7R MLCC Selection Guide
How to choose CL05B103KB5NNNC and related 0402 MLCCs for bypassing, filtering, voltage derating, and sourcing.
Jul 2, 2026
Why Buy from FindMyChip
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“FindMyChip sourced our entire STM32 BOM in 48 hours when our usual distributor had 16-week lead times.”