TN0110N3-G P005 Microchip MOSFET (N-Channel) (Other) In Stock
TN0110N3-G P005 is an N-channel enhancement-mode vertical DMOSFET rated at 100 V, 2.0 A, and 3.0 Ω RDS(on), housed in a compact TO-92 package for low-cost switching applications.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TN0110N3-G P005 Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 100 V drain-source breakdown voltage and 2.0 A continuous drain current handle medium-voltage switching loads in a through-hole TO-92 package
- Low 3.0 Ω RDS(on) minimizes conduction losses in battery-powered and 12 V rail switching circuits
- Wide -55°C to +150°C operating temperature range suits harsh industrial and automotive low-side switch applications
- Lead-free, RoHS-compliant (G suffix) construction meets modern environmental regulations without design changes
Applications
The TN0110N3-G P005 is used as a low-side switch in 12 V to 48 V relay-driver circuits, solenoid actuators, and LED string controls where a compact through-hole transistor is preferred over surface-mount alternatives. Its 100 V rating accommodates inductive fly-back transients in motor and relay switching, making it suitable for HVAC control boards and industrial sensor power gating. The device also fits hobbyist and prototyping applications where breadboard-compatible TO-92 packaging simplifies assembly.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for TN0110N3-G P005:
Frequently Asked Questions
What drain voltage and current ratings define the safe operating area of the TN0110N3-G P005?
The TN0110N3-G P005 is rated for a 100 V drain-source voltage and 2.0 A continuous drain current, with an RDS(on) of 3.0 Ω at VGS = 10 V. These ratings allow the device to drive resistive and inductive loads up to 2 A in 12 V to 48 V supply rails without additional derating at room temperature.
How does the TO-92 package affect heat dissipation in continuous-conduction designs?
The TO-92 plastic package has a typical thermal resistance of about 200°C/W junction-to-ambient, limiting continuous power dissipation to roughly 350 mW at 25°C ambient before derating. For the TN0110N3-G P005 operating at 2 A with 3.0 Ω RDS(on), conduction loss is 12 mW at maximum rated current, well within the package thermal limit.
Which low-side switching applications benefit most from the TN0110N3-G P005 versus a BJT?
Unlike a BJT that requires continuous base-drive current, the MOSFET gate draws near-zero DC current, reducing microcontroller GPIO loading in relay-driver and solenoid-control designs at 5 V logic levels. The TN0110N3-G P005 turns fully on with VGS as low as 4 V, making it compatible with 3.3 V and 5 V MCU outputs for switching 12 V loads at frequencies up to several hundred kilohertz.
What temperature range qualifies the TN0110N3-G P005 for industrial and automotive environments?
The part operates from -55°C to +150°C junction temperature, covering both cold-start conditions in automotive electronics and elevated ambient temperatures in enclosed industrial enclosures. This range matches AEC-Q101 evaluation criteria for discrete semiconductors, making it a candidate for vehicle body-control low-side switch applications pending formal qualification testing.
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