TC4429EPA Microchip Integrated Circuit (Dual-In-Line Packages) In Stock
The TC4429EPA is a high-speed single-channel 6 A MOSFET gate driver with inverting output and Schmitt-trigger input, housed in an 8-pin DIP package for through-hole designs. It drives power MOSFET or IGBT gates with 6 A peak current to achieve fast switching transitions in switch-mode power supplies. Available from stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- Dual-In-Line Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- TC4429EPA Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $1.0300(MOQ 1)
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TC4429EPA?
- 6 A peak gate-drive current enables fast charging of large MOSFET gate capacitances (up to 10 nF) in under 10 ns, minimizing switching losses in high-frequency power converters
- Schmitt-trigger input with 0.8 V to 2.4 V hysteresis rejects noise and glitches on slow-rising PWM signals, preventing false triggering in noisy industrial switching environments
- Inverting buffer topology allows direct connection to PWM controller logic outputs for synchronous buck or flyback switch stages without additional logic inversion components
What is TC4429EPA used for?
The TC4429EPA is used in switch-mode power supply designs, DC motor drives, and electronic load circuits where a PWM controller requires a high-current buffer stage to rapidly charge and discharge large power MOSFET gate capacitances. Its 6 A peak output is sufficient to drive IGBTs and MOSFETs with gate charges up to 100 nC at switching frequencies up to 1 MHz, keeping transition times well below the period needed for efficient conversion. The through-hole 8-pin DIP package makes it a convenient choice for prototyping and legacy industrial equipment repair where surface-mount rework is impractical.
What are the specifications of TC4429EPA?
| Pbfree Code | Yes |
| Manufacturer Package Code | PDIP-8 |
| Factory Lead Time | 10Weeks |
| YTEOL | 8 |
| High Side Driver | YES |
| Input Characteristics | SCHMITT TRIGGER |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 Code | R-PDIP-T8 |
| JESD-609 Code | e3 |
| Number of Functions | 1 |
| Output Characteristics | TOTEM-POLE |
| Output Peak Current Limit-Nom | 6A |
| Output Polarity | INVERTED |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | DIP8,.3 |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Qualification Status | Not Qualified |
| Screening Level | TS 16949 |
| Supply Current-Max | 3mA |
| Supply Voltage-Max | 18V |
| Supply Voltage-Min | 4.5V |
| Supply Voltage1-Max | 18V |
| Supply Voltage1-Min | 4.5V |
| Surface Mount | NO |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54mm |
| Terminal Position | DUAL |
| Turn-off Time | 0.16 µs |
| Turn-on Time | 0.16 µs |
| ## TC4429EPA Alternates Showing results | Image |
| Package | Dual-In-Line Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Thailand |
Where can I find the TC4429EPA datasheet?
TC4429EPA Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for TC4429EPA?
Compatible alternatives and drop-in replacements for TC4429EPA:
suggested
suggested
suggested
Frequently Asked Questions
How does a 6 A gate-driver like the TC4429EPA reduce switching losses compared to a microcontroller driving the MOSFET directly?
A microcontroller GPIO typically sources or sinks only 8 mA to 25 mA, so charging a MOSFET with a 10 nF gate capacitance takes 400 ns to 1.25 µs using just the microcontroller output. The TC4429EPA sources up to 6 A, reducing that same transition to under 10 ns. At a 100 kHz switching frequency, slow transitions increase switching losses by the factor (transition time / period), so cutting the transition from 1 µs to 10 ns reduces crossover switching loss by roughly 99%, translating directly to lower FET temperature and higher converter efficiency.
What does the Schmitt-trigger input on the TC4429EPA protect against in a practical power supply layout?
High-current switching transients in a power supply generate ground bounce and capacitively-coupled spikes on signal traces that can exceed 0.5 V amplitude and 20 ns duration. Without Schmitt-trigger hysteresis, a standard CMOS input with a single threshold would interpret these spikes as logic transitions and produce false gate pulses, potentially causing shoot-through in a half-bridge topology. The TC4429EPA's Schmitt-trigger input requires approximately 0.8 V to 2.4 V of voltage swing to change state, suppressing sub-threshold noise transients and ensuring only valid PWM signal edges reach the gate-drive output.
When is the TC4429EPA a better fit than a half-bridge driver for a simple single-switch buck converter?
In a single-switch topology (synchronous buck low-side MOSFET only, or a flyback primary switch), only one gate-drive channel is needed and there is no requirement for dead-time control or bootstrap high-side drive. Using a TC4429EPA single-channel driver rather than a dual half-bridge driver reduces the IC cost by roughly 30% to 50%, eliminates the high-side bootstrap capacitor circuit, and simplifies the layout. The TC4429EPA is the right choice when the application has a single MOSFET switch and the PWM signal is already inverted relative to the desired gate state, since the TC4429EPA output is inverting.
How many nanoseconds does the TC4429EPA take to turn on a MOSFET with a 20 nC total gate charge at a 5 V gate drive?
With a 6 A peak source current and a 20 nC gate charge, the theoretical charge time is Q/I = 20 nC / 6 A ≈ 3.3 ns. In practice, the average current during the plateau region is lower (roughly 3 A to 4 A), so a realistic turn-on transition time including the gate plateau is approximately 5 ns to 10 ns. This allows the TC4429EPA to support switching frequencies up to 500 kHz to 1 MHz for MOSFETs with gate charges in the 15 nC to 30 nC range while keeping the duty-cycle error from switching transitions below 1% of the period.
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More from Microchip
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3800 | $2.38 |
| 25+ | $2.0000 | $50.00 |
| 100+ | $1.8100 | $181.00 |
| 300+ | $1.0500 | $315.00 |
| 900+ | $1.0400 | $936.00 |
| 1500+ | $1.0300 | $1545.00 |
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