STW5NB90 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STW5NB90 is an N-channel power MOSFET in a TO-247 package rated at 900 V drain-source breakdown voltage and 5.6 A maximum drain current with an on-resistance of 2.5 Ω. It features avalanche rating of 284 mJ and an integrated body diode for robust switching in high-voltage power conversion designs. Available from authorized distributors worldwide with competitive pricing and strong inventory.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STW5NB90 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 900 V drain-source breakdown voltage with 5.6 A drain current rating supports high-voltage power conversion stages in offline and industrial power supply designs
- Avalanche energy rating of 284 mJ provides robustness against inductive load transients, protecting the MOSFET in motor drives and flyback converter applications
- Low feedback capacitance of 13 pF (Crss) and isolated TO-247 package enable fast switching transitions and safe thermal management in high-voltage circuits
Applications
The STW5NB90 is used in offline AC-DC switched-mode power supplies, flyback converters, and active power factor correction circuits where a 900 V N-channel MOSFET with 5.6 A continuous drain current is required for reliable high-voltage switching. Its avalanche-rated construction makes it suitable for motor drive systems and induction heating equipment that generate high-voltage inductive spikes during switch-off events. The TO-247 through-hole package simplifies heatsink attachment for thermal management in high-power industrial and consumer power conversion designs.
Specifications
| YTEOL | 0 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 284mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 900V |
| Drain Current-Max (ID) | 5.6A |
| Drain-source On Resistance-Max | 2.5Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 13pF |
| JEDEC-95 Code | TO-247AC |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 160W |
| Pulsed Drain Current-Max (IDM) | 22.4A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the drain voltage and current ratings of the STW5NB90, and how do they define its application range?
The STW5NB90 is rated for 900 V drain-source breakdown voltage and 5.6 A maximum continuous drain current, with a maximum on-resistance of 2.5 Ω. These parameters position it for high-voltage power supplies, PFC stages, and offline converters operating from 230 V AC mains where a safety margin above 600 V is required for reliable long-term switching.
How does the STW5NB90 handle inductive flyback events in motor drive or converter designs?
The STW5NB90 is rated for an avalanche energy of 284 mJ, meaning it can absorb inductive energy spikes without failure during unclamped inductive switching events. This avalanche rating is critical in motor drives and flyback converters where leakage inductance can generate voltage spikes exceeding the 900 V rated breakdown if no external clamp is present, providing a safety margin for reliable operation.
Why is the isolated TO-247 package of the STW5NB90 preferred for heatsink mounting in high-power designs?
The TO-247 isolated package separates the drain tab electrically from the heatsink mounting surface, allowing the MOSFET to be bolted directly to a shared chassis heatsink without insulating washers in some designs, while in others the isolation simplifies compliance with safety creepage requirements in 900 V circuits. The large TO-247 body also accommodates the thermal dissipation needed when the 5.6 A rated MOSFET operates with 2.5 Ω on-resistance under continuous load.
Related Guides
1206 100 uF MLCC Design Guide for Compact Bulk Decoupling
Design guidance for applying CL31A107MQHNNNE and related 1206 MLCCs in compact bulk decoupling networks.
Jul 3, 2026
0402 10 nF MLCC Design Guide for High-Speed Decoupling
Practical design guidance for using CL05B103KB5NNNC and related 0402 MLCCs in high-speed decoupling networks.
Jul 3, 2026
CL31A107MQHNNNE 1206 100 uF MLCC Selection Guide
How to choose CL31A107MQHNNNE and related 1206 MLCCs for low-voltage bulk capacitance and regulator stability.
Jul 2, 2026
CL05B103KB5NNNC 0402 10 nF X7R MLCC Selection Guide
How to choose CL05B103KB5NNNC and related 0402 MLCCs for bypassing, filtering, voltage derating, and sourcing.
Jul 2, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”