STW10NK60ZAlternatives & Equivalent Parts
About STW10NK60Z
STW10NK60Z is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STW10NK60ZSource | STB16N65M5 | STB4NK60ZT4 | STF20N90K5 | STI55NF03L | STP18N65M5 | STP3NK60Z | STQ1HN60K3-AP | STU6N60M2 | STU80N4F6 | STW10NK80Z |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Other | Other | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical | Other | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical |
| Pin Count | 3 | 4 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Temperature Range | ~ 150.0°C | ~ 150.0°C | ~ 150.0°C | -55.0°C ~ 150.0°C | -60.0°C ~ 175.0°C | ~ 150.0°C | ~ 150.0°C | — | -55.0°C ~ 150.0°C | ~ 175.0°C | ~ 150.0°C |
| Price | $1.8500 | $1.6875 | $0.6361 | $3.1150 | $0.6618 | $1.1832 | $0.5748 | $0.2615 | $0.3884 | $0.7375 | $1.3137 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | OBSOLETE | ACTIVE | ACTIVE | NOT RECOMMENDED | ACTIVE | ACTIVE | OBSOLETE | OBSOLETE | OBSOLETE | ACTIVE |
| Electrical Parameters | |||||||||||
| Factory Lead Time | 16 Weeks | — | — | 14 Weeks | — | 14 Weeks | 13 Weeks | — | — | — | 16 Weeks |
| YTEOL | 5.9 | 0 | 6.3 | 5 | 3 | 6 | 5.8 | 0 | 0 | 0 | 6.4 |
| Avalanche Energy Rating (Eas) | 300 mJ | 200 mJ | 120 mJ | 500 mJ | 120 mJ | 210 mJ | 150 mJ | — | 86 mJ | — | 290 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | — | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600 V | 650 V | 600 V | 900 V | 30 V | 650 V | 600 V | — | 600 V | — | 800 V |
| Drain Current-Max (ID) | 10 A | 12 A | 4 A | 20 A | 55 A | 15 A | 2.4 A | — | 4.5 A | 80 A | 9 A |
| Drain-source On Resistance-Max | 0.75 Ω | 0.279 Ω | 2 Ω | 0.25 Ω | 0.02 Ω | 0.22 Ω | 3.6 Ω | — | 1.2 Ω | — | 0.9 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247AC | TO-263AB | — | TO-220AB | TO-262AA | TO-220AB | TO-220AB | — | TO-251 | — | TO-247 |
| JESD-30 Code | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSIP-T3 | R-PSFM-T3 | R-PSFM-T3 | — | R-PSIP-T3 | — | R-PSFM-T3 |
| JESD-609 Code | e3 | e3 | e3 | e3 | e3 | — | e3 | — | e3 | — | e3 |
| Number of Elements | 1 | 1 | 1 | 1 | 1 | 1 | 1 | — | 1 | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | — | ENHANCEMENT MODE | — | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | — | PLASTIC/EPOXY | — | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | — | RECTANGULAR | — | RECTANGULAR |
| Package Style | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | IN-LINE | FLANGE MOUNT | FLANGE MOUNT | — | IN-LINE | — | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | — | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 156 W | 90 W | 70 W | 40 W | 80 W | 110 W | 45 W | — | 60 W | 70 W | 160 W |
| Pulsed Drain Current-Max (IDM) | 36 A | 48 A | 16 A | 80 A | 220 A | 60 A | 9.6 A | — | 18 A | — | 36 A |
| Qualification Status | Not Qualified | — | Not Qualified | — | — | — | Not Qualified | — | — | — | Not Qualified |
| Surface Mount | NO | YES | YES | NO | NO | NO | NO | — | NO | NO | NO |
| Terminal Finish | Matte Tin (Sn) | MATTE TIN | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) | — | Matte Tin (Sn) | — | Matte Tin (Sn) - annealed | — | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | — | THROUGH-HOLE | — | THROUGH-HOLE |
| Terminal Position | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | — | SINGLE | — | SINGLE |
| Transistor Application | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | — | SWITCHING | — | SWITCHING |
| Transistor Element Material | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | — | SILICON | — | SILICON |
| Pbfree Code | — | Yes | — | — | — | — | — | — | — | — | — |
| Additional Feature | — | ULTRA-LOW RESISTANCE | — | — | — | — | — | — | — | — | — |
| Case Connection | — | DRAIN | — | ISOLATED | DRAIN | DRAIN | — | — | DRAIN | — | — |
| Peak Reflow Temperature (Cel) | — | 245 | 245 | — | — | NOT SPECIFIED | — | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | — |
| Time@Peak Reflow Temperature-Max (s) | — | 30 | 30 | — | — | NOT SPECIFIED | — | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | — |
| Feedback Cap-Max (Crss) | — | — | — | 1 pF | 115 pF | — | — | — | 0.7 pF | — | — |
| Date Of Intro | — | — | — | — | — | — | 1980-01-04 | — | — | — | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
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Get one quote covering all 10 alternatives for STW10NK60Z — response within 24 hours.
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Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Why Look for Alternatives?
Finding alternatives for STW10NK60Z is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STW10NK60Z replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STW10NK60Z?
Known equivalents for STW10NK60Z include STB16N65M5, STB4NK60ZT4, STF20N90K5. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STW10NK60Z?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STW10NK60Z alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.