STRH100N10HYG STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STRH100N10HYG is a radiation-hardened N-channel power MOSFET rated at 100 V and 48 A with an R_DS(on) of 35 mΩ in a TO-254AA package. It includes an integrated body diode and is designed for space and satellite power-switching applications. Available from stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH100N10HYG Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened 100 V, 48 A N-channel MOSFET with 35 mΩ R_DS(on) for space-grade power conversion
- High avalanche energy rating of 954 mJ ensures robust protection against inductive switching transients in satellite power systems
- Integrated body diode and TO-254AA package simplify synchronous rectification layouts in rad-hard DC-DC converters
Applications
The STRH100N10HYG is engineered for radiation-hardened power electronics aboard satellites, spacecraft, and high-altitude platforms where total ionizing dose and single-event effects are design constraints. Its 100 V blocking capability and 48 A continuous drain current make it suitable for primary bus regulators, battery charge controllers, and high-current switching stages in space power conditioning units. Ground-based nuclear facility power systems and particle-accelerator instrumentation also leverage its rad-hard characteristics for reliable operation in high-radiation environments.
Specifications
| YTEOL | 5.3 |
| Avalanche Energy Rating (Eas) | 954mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 48A |
| Drain-source On Resistance-Max | 0.035Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 284pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 170W |
| Pulsed Drain Current-Max (IDM) | 192A |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 50K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 169.4ns |
| Turn-on Time-Max (ton) | 87ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings that make STRH100N10HYG suitable for space power converters?
The STRH100N10HYG is rated at 100 V breakdown voltage, 48 A maximum drain current, and 35 mΩ maximum R_DS(on), which together enable high-efficiency switching in satellite bus regulators. Its 954 mJ avalanche energy rating adds robustness against inductive load transients common in spacecraft power distribution.
How does the TO-254AA package affect thermal management in radiation-hardened PCB designs?
The TO-254AA is a metal-tab through-hole package that provides low thermal resistance to the heatsink, helping dissipate power losses at 48 A switching currents. In space power boards, the robust mechanical mounting allows direct attachment to chassis walls for conductive cooling, which is essential where convective cooling is unavailable in vacuum. The package also offers stable lead dimensions for manual and wave-soldering assembly.
When is the STRH100N10HYG preferred over a commercial-grade MOSFET in defense applications?
Whenever the application environment exposes the device to ionizing radiation doses above 10 krad(Si) or must pass MIL-STD qualification, the STRH100N10HYG is the appropriate choice over standard commercial MOSFETs. Its radiation-hardened process prevents threshold-voltage shifts and leakage increases that would degrade efficiency in a 100 V, 48 A power stage over the mission lifetime of 10 to 15 years in low-earth orbit.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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