STRH100N10HY1 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STRH100N10HY1 is a radiation-hardened N-channel power MOSFET rated at 100 V and 48 A with 35 mΩ on-resistance in a TO-254AA package, designed for space and high-reliability power switching applications.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH100N10HY1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STRH100N10HY1?
- Radiation-hardened design rated to withstand space-grade ionizing radiation for satellite and aerospace power systems
- 100 V drain-source breakdown voltage with 48 A continuous drain current and ultra-low 35 mΩ on-resistance for efficient power conversion
- 954 mJ avalanche energy rating and integrated built-in diode provide robust protection in inductive load switching applications
What is STRH100N10HY1 used for?
The STRH100N10HY1 is purpose-built for space and high-reliability power management systems including satellite power conditioning units, launch vehicle motor controllers, and radiation-exposed industrial power converters. Its 100 V, 48 A rating with only 35 mΩ RDS(on) enables high-efficiency DC-DC conversion and load switching in environments where total ionizing dose reliability is critical. The TO-254AA through-hole package also simplifies mounting in avionics chassis and space-qualified power modules requiring secure mechanical attachment.
What are the specifications of STRH100N10HY1?
| YTEOL | 5.3 |
| Avalanche Energy Rating (Eas) | 954mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 48A |
| Drain-source On Resistance-Max | 0.035Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 284pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 170W |
| Pulsed Drain Current-Max (IDM) | 192A |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 169.4ns |
| Turn-on Time-Max (ton) | 87ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Where can I find the STRH100N10HY1 datasheet?
STRH100N10HY1 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STRH100N10HY1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain-source voltage and current ratings does STRH100N10HY1 support?
The STRH100N10HY1 supports a minimum drain-source breakdown voltage of 100 V and a maximum continuous drain current of 48 A. Combined with a maximum on-resistance of 35 mΩ, it delivers efficient power switching for high-current space-grade DC-DC converters and motor drive circuits operating from battery or regulated bus voltages up to 100 V.
How does the avalanche energy rating of STRH100N10HY1 protect inductive load circuits?
The STRH100N10HY1 has an avalanche energy rating (Eas) of 954 mJ, meaning it can safely absorb nearly 1 joule of energy during unclamped inductive switching events without damage. This high avalanche ruggedness protects the MOSFET when switching motors, solenoids, or transformer primaries that generate large voltage spikes at turn-off, reducing the need for external snubber circuits in space power conditioning units.
Which radiation-hardened power supply designs benefit most from STRH100N10HY1's TO-254AA package?
The TO-254AA (JEDEC-95) package of STRH100N10HY1 is a through-hole style with a 3-pin metal flange, allowing secure bolted mounting to chassis heatsinks in satellite bus regulators, spacecraft power distribution units, and radiation-hardened motor drive boards. The metal package body also aids thermal conduction in vacuum environments where convective cooling is absent, supporting the 48 A current rating at elevated junction temperatures typical of space missions.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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