STP80NF06Alternatives & Equivalent Parts
About STP80NF06
STP80NF06 is a Integrated Circuit component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STP80NF06Source | STP80NF12 | STP80NF10 | STP80NF70 | STP80NF55-06 | STP80NF10FP | STP80NF55-08 | STP80NF55L-06 | STP80NF55-08AG |
|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical |
| Pin Count | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Temperature Range | ~ 175.0°C | ~ 175.0°C | ~ 175.0°C | ~ 175.0°C | ~ 175.0°C | ~ 175.0°C | ~ 175.0°C | ~ 175.0°C | -55.0°C ~ 175.0°C |
| Price | $1.8423 | $0.8061 | $0.9222 | $0.6647 | $0.7349 | $0.9064 | $0.9399 | $2.0550 | $1.7600 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | OBSOLETE | ACTIVE | ACTIVE | NOT RECOMMENDED | ACTIVE | ACTIVE | ACTIVE | OBSOLETE | OBSOLETE |
| Electrical Parameters | |||||||||
| YTEOL | 0 | 5.92 | 5.3 | 3 | 5.1 | 5.3 | 5.1 | 0 | 0 |
| Additional Feature | LOW THRESHOLD | — | — | — | — | — | — | LOGIC LEVEL COMPATIBLE | — |
| Avalanche Energy Rating (Eas) | 870 mJ | 700 mJ | 350 mJ | 700 mJ | 1300 mJ | 350 mJ | 1000 mJ | 1300 mJ | 1000 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V | 120 V | 100 V | 68 V | 55 V | 100 V | 55 V | 55 V | 55 V |
| Drain Current-Max (ID) | 80 A | 80 A | 80 A | 98 A | 80 A | 38 A | 80 A | 80 A | 80 A |
| Drain-source On Resistance-Max | 0.008 Ω | 0.018 Ω | 0.015 Ω | 0.0098 Ω | 0.0065 Ω | 0.015 Ω | 0.008 Ω | 0.008 Ω | 0.008 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 Code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 Code | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e3 | — |
| Number of Elements | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300 W | 300 W | 300 W | 190 W | 210 W | 40 W | 300 W | 210 W | 300 W |
| Pulsed Drain Current-Max (IDM) | 320 A | 320 A | 320 A | 392 A | 320 A | 152 A | 320 A | 320 A | 320 A |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | — |
| Surface Mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal Finish | MATTE TIN | Matte Tin (Sn) | Matte Tin (Sn) - annealed | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | MATTE TIN | — |
| Terminal Form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal Position | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Transistor Application | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Factory Lead Time | — | 13 Weeks | 13 Weeks | 13 Weeks | 13 Weeks | 13 Weeks | 13 Weeks | — | — |
| Case Connection | — | DRAIN | — | DRAIN | DRAIN | ISOLATED | DRAIN | DRAIN | DRAIN |
| Peak Reflow Temperature (Cel) | — | — | — | NOT SPECIFIED | NOT SPECIFIED | — | NOT SPECIFIED | — | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | — | — | — | NOT SPECIFIED | NOT SPECIFIED | — | NOT SPECIFIED | — | NOT SPECIFIED |
| Date Of Intro | — | — | — | — | — | — | 1980-01-04 | — | — |
| Reference Standard | — | — | — | — | — | — | — | — | AEC-Q101 |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 8 alternatives for STP80NF06 — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 80A I(D), 120V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 98A I(D), 68V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 38A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-
Why Look for Alternatives?
Finding alternatives for STP80NF06 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STP80NF06 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STP80NF06?
Known equivalents for STP80NF06 include STP80NF12, STP80NF10, STP80NF70. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STP80NF06?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STP80NF06 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.