STP80NF55-08 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP80NF55-08 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.9399(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Specifications
| Factory Lead Time | 13Weeks |
| Date Of Intro | 1980-01-04 |
| YTEOL | 5.1 |
| Avalanche Energy Rating (Eas) | 1000mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55V |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 0.008Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STP80NF55-08:
suggested
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Frequently Asked Questions
What is the price of STP80NF55-08?
STP80NF55-08 is priced from $0.9399 USD depending on quantity. Submit an RFQ on FindMyChip for the best current pricing from authorized China distributors.
Is STP80NF55-08 in stock?
STP80NF55-08 is currently available at FindMyChip. We maintain stock from authorized distributors and ship worldwide with typical 3-7 business day lead time.
Where can I buy STP80NF55-08?
You can buy STP80NF55-08 from FindMyChip, a B2B electronic component platform sourcing from China distributors. We offer competitive pricing and low MOQ for STP80NF55-08 from STMicroelectronics.
What is the datasheet for STP80NF55-08?
The official STP80NF55-08 datasheet from STMicroelectronics contains full specifications including pin configuration, electrical characteristics, and application notes. Download it directly from the datasheet section above.
What package does STP80NF55-08 come in?
STP80NF55-08 is available in Transistor Outline, Vertical packaging. See the package diagram and pinout above for detailed dimensional information.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.0375 | $3.04 |
| 4+ | $2.0250 | $8.10 |
| 100+ | $1.4800 | $148.00 |
| 300+ | $0.9750 | $292.50 |
| 1000+ | $0.9550 | $955.00 |
| 2000+ | $0.9399 | $1879.86 |
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