STP3NK60ZAlternatives & Equivalent Parts

About STP3NK60Z

STP3NK60Z is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTP3NK60ZSourceSTB16N65M5STB4NK60ZT4STF20N90K5STI55NF03LSTP18N65M5STQ1HN60K3-APSTU6N60M2STU80N4F6STP3NK60ZFP
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeTransistor Outline, VerticalOtherOtherTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, VerticalOtherTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count3433333333
Temperature Range~ 150.0°C~ 150.0°C~ 150.0°C-55.0°C ~ 150.0°C-60.0°C ~ 175.0°C~ 150.0°C—-55.0°C ~ 150.0°C~ 175.0°C~ 150.0°C
Price$0.5748$1.6875$0.6361$3.1150$0.6618$1.1832$0.2615$0.3884$0.7375$0.5906
StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEOBSOLETEACTIVEACTIVENOT RECOMMENDEDACTIVEOBSOLETEOBSOLETEOBSOLETEACTIVE
Electrical Parameters
Factory Lead Time13 Weeks——14 Weeks—14 Weeks———13 Weeks
Date Of Intro1980-01-04————————1980-01-04
YTEOL5.806.35360006
Avalanche Energy Rating (Eas)150 mJ200 mJ120 mJ500 mJ120 mJ210 mJ—86 mJ—150 mJ
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE—SINGLE WITH BUILT-IN DIODESINGLESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V650 V600 V900 V30 V650 V—600 V—600 V
Drain Current-Max (ID)2.4 A12 A4 A20 A55 A15 A—4.5 A80 A2.4 A
Drain-source On Resistance-Max3.6 Ω0.279 Ω2 Ω0.25 Ω0.02 Ω0.22 Ω—1.2 Ω—3.6 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR—METAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220ABTO-263AB—TO-220ABTO-262AATO-220AB—TO-251—TO-220AB
JESD-30 CodeR-PSFM-T3R-PSSO-G2R-PSSO-G2R-PSFM-T3R-PSIP-T3R-PSFM-T3—R-PSIP-T3—R-PSFM-T3
JESD-609 Codee3e3e3e3e3——e3—e3
Number of Elements111111—111
Operating ModeENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE—ENHANCEMENT MODE—ENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY—PLASTIC/EPOXY—PLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULAR—RECTANGULAR—RECTANGULAR
Package StyleFLANGE MOUNTSMALL OUTLINESMALL OUTLINEFLANGE MOUNTIN-LINEFLANGE MOUNT—IN-LINE—FLANGE MOUNT
Polarity/Channel TypeN-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNEL—N-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)45 W90 W70 W40 W80 W110 W—60 W70 W20 W
Pulsed Drain Current-Max (IDM)9.6 A48 A16 A80 A220 A60 A—18 A—9.6 A
Qualification StatusNot Qualified—Not Qualified——————Not Qualified
Surface MountNOYESYESNONONO—NONONO
Terminal FinishMatte Tin (Sn)MATTE TINMatte Tin (Sn) - annealedMatte Tin (Sn) - annealedMatte Tin (Sn)——Matte Tin (Sn) - annealed—Matte Tin (Sn)
Terminal FormTHROUGH-HOLEGULL WINGGULL WINGTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLE—THROUGH-HOLE—THROUGH-HOLE
Terminal PositionSINGLESINGLESINGLESINGLESINGLESINGLE—SINGLE—SINGLE
Transistor ApplicationSWITCHINGSWITCHINGSWITCHINGSWITCHINGSWITCHINGSWITCHING—SWITCHING—SWITCHING
Transistor Element MaterialSILICONSILICONSILICONSILICONSILICONSILICON—SILICON—SILICON
Pbfree Code—Yes————————
Additional Feature—ULTRA-LOW RESISTANCE————————
Case Connection—DRAIN—ISOLATEDDRAINDRAIN—DRAIN—ISOLATED
Peak Reflow Temperature (Cel)—245245——NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED—
Time@Peak Reflow Temperature-Max (s)—3030——NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED—
Feedback Cap-Max (Crss)———1 pF115 pF——0.7 pF——

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Quick Links

STU6N60M2

suggested

STU80N4F6

suggested

STP3NK60ZFPby STMicroelectronics

Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Why Look for Alternatives?

Finding alternatives for STP3NK60Z is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STP3NK60Z replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STP3NK60Z?

Known equivalents for STP3NK60Z include STB16N65M5, STB4NK60ZT4, STF20N90K5. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STP3NK60Z?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STP3NK60Z alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.