STP10NK60ZFPAlternatives & Equivalent Parts

About STP10NK60ZFP

STP10NK60ZFP is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTP10NK60ZFPSourceSTP10NK60ZGBJ2510ADE02A04EXB-18V220JXAT24C04D-MAHM-TSTP10NK80ZFPSTP10NK70ZFPSTP10NK80Z
ManufacturerSTMicroelectronicsSTMicroelectronicsHY Electronic CorpTE ConnectivityPanasonicMicrochipSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeTransistor Outline, VerticalTransistor Outline, VerticalOtherDual-In-Line PackagesOtherSmall Outline No-leadTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count334488333
Temperature Range~ 150.0°C~ 150.0°C-55.0°C ~ 150.0°C-30.0°C ~ 85.0°C—-40.0°C ~ 85.0°C~ 150.0°C~ 150.0°C~ 150.0°C
Price$1.0400$0.7056$0.2227$0.4049$0.0438$0.1640$1.8943$1.1074$1.6948
StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVECONTACT MANUFACTURERACTIVEACTIVEACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Factory Lead Time13 Weeks————16 Weeks13 Weeks13 Weeks13 Weeks
YTEOL5.95.9—7.3—146.46.46.4
Avalanche Energy Rating (Eas)300 mJ300 mJ————290 mJ350 mJ290 mJ
Case ConnectionISOLATED—————ISOLATEDISOLATED—
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEBRIDGE, 4 ELEMENTS———SINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V600 V————800 V700 V800 V
Drain Current-Max (ID)10 A10 A————9 A8.6 A9 A
Drain-source On Resistance-Max0.75 Ω0.75 Ω————0.9 Ω0.85 Ω0.9 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR————METAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220ABTO-220AB————TO-220ABTO-220ABTO-220AB
JESD-30 CodeR-PSFM-T3R-PSFM-T3R-PSFM-T4——R-PDSO-N8R-PSFM-T3R-PSFM-T3R-PSFM-T3
JESD-609 Codee3e3———e4e3e3e3
Number of Elements114———111
Operating ModeENHANCEMENT MODEENHANCEMENT MODE———SYNCHRONOUSENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY——PLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULAR——RECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package StyleFLANGE MOUNTFLANGE MOUNTFLANGE MOUNT——SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILEFLANGE MOUNTFLANGE MOUNTFLANGE MOUNT
Peak Reflow Temperature (Cel)260————260NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Polarity/Channel TypeN-CHANNELN-CHANNEL————N-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)35 W115 W————40 W35 W160 W
Pulsed Drain Current-Max (IDM)36 A36 A————36 A34 A36 A
Qualification StatusNot QualifiedNot Qualified———Not QualifiedNot QualifiedNot QualifiedNot Qualified
Surface MountNONONONO—YESNONONO
Terminal FinishMatte Tin (Sn)Matte Tin (Sn)———Nickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn)Matte Tin (Sn)Matte Tin (Sn)
Terminal FormTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLE——NO LEADTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLE
Terminal PositionSINGLESINGLESINGLE——DUALSINGLESINGLESINGLE
Transistor ApplicationSWITCHINGSWITCHING————SWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICON————SILICONSILICONSILICON
Breakdown Voltage-Min——1000 V——————
Diode Element Material——SILICON——————
Diode Type——BRIDGE RECTIFIER DIODE——————
Forward Voltage-Max (VF)——1 V——————
Non-rep Pk Forward Current-Max——350 A——————
Number of Phases——1——————
Output Current-Max——4.2 A——————
Rep Pk Reverse Voltage-Max——1000 V——————
Actuator Color———WHITE—————
Actuator Length———0.039 inch—————
Actuator Material———POLYAMIDE6T—————
Actuator Type———SLIDE TYPE—————
Additional Feature———APPROVAL: UL—1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz———
Body Breadth———7.06 mm—————
Body Color———BLACK—————
Body Height———3.5 mm—————
Body Length or Diameter———7.01 mm—————
Center Contact Material———COPPER ALLOY—————
Center Contact Plating———GOLD OVER NICKEL—————
Contact Current(AC)-Max———1 A—————
Contact Current(DC)-Max———0.1 A—————
Contact (DC) Max Rating R Load———0.1A@24VDC—————
Contact Function———OFF-ON—————
Contact Resistance———0.1 mΩ—————
Contact Voltage(DC)-Max———24 V—————
Dielectric Withstand Volts———300VAC V—————
Electrical Life———1000 Cycle(s)—————
End Contact Material———COPPER ALLOY—————
End Contact Plating———GOLD OVER NICKEL—————
Housing Material———POLYPHENYLENE SULPHIDE—————
Insulation Resistance———1000000000 Ω—————
Insulator Material———POLYPHENYLENE SULPHIDE—————
Mounting Feature———THROUGH HOLE-RIGHT ANGLE—————
Number of Positions———2—————
Number of Switch Sections———2—————
PCB Hole Count———4—————
Packing Method———TUBE—————
Switch Action———LATCHED—————
Switch Function———SPST—————
Switch Type———SLIDE DIP SWITCH—————
Terminal Length———0.157 inch—————
Terminal Material———COPPER ALLOY—————
Termination Type———SOLDER—————
Pbfree Code—————Yes———
Manufacturer Package Code—————UDFN-8———
Clock Frequency-Max (fCLK)—————1 MHz———
Data Polling—————YES———
Data Retention Time-Min—————100———
Endurance—————1000000 Write/Erase Cycles———
I2C Control Byte—————1010DDXR———
Memory Density—————4096 bit———
Memory IC Type—————EEPROM———
Memory Width—————8———
Number of Functions—————1———
Number of Ports—————1———
Number of Words—————512 words———
Number of Words Code—————512———
Organization—————512X8———
Output Characteristics—————OPEN-DRAIN———
Package Equivalence Code—————SOLCC8,.12,20———
Page Size—————16 words———
Parallel/Serial—————SERIAL———
Programming Voltage—————3 V———
Serial Bus Type—————I2C———
Standby Current-Max—————8e-7 A———
Supply Current-Max—————0.001 mA———
Supply Voltage-Max (Vsup)—————3.6 V———
Supply Voltage-Min (Vsup)—————2.5 V———
Supply Voltage-Nom (Vsup)—————3 V———
Technology—————CMOS———
Temperature Grade—————INDUSTRIAL———
Terminal Pitch—————0.5 mm———
Time@Peak Reflow Temperature-Max (s)—————40NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Write Cycle Time-Max (tWC)—————5 ms———
Write Protection—————HARDWARE———

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 8 alternatives for STP10NK60ZFP — response within 24 hours.

Quick Links

GBJ2510

suggested

ADE02A04

suggested

STP10NK80ZFPby STMicroelectronics

Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

STP10NK70ZFPby STMicroelectronics

Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

STP10NK80Zby STMicroelectronics

Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Why Look for Alternatives?

Finding alternatives for STP10NK60ZFP is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STP10NK60ZFP replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STP10NK60ZFP?

Known equivalents for STP10NK60ZFP include STP10NK60Z, GBJ2510, ADE02A04. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STP10NK60ZFP?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STP10NK60ZFP alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.