STP10NK60ZFPAlternatives & Equivalent Parts

About STP10NK60ZFP

STP10NK60ZFP is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTP10NK60ZFPSourceSTP10NK60ZGBJ2510ADE02A04EXB-18V220JXAT24C04D-MAHM-TSTP10NK80ZFPSTP10NK70ZFPSTP10NK80Z
ManufacturerSTMicroelectronicsSTMicroelectronicsHY Electronic CorpTE ConnectivityPanasonicMicrochipSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeTransistor Outline, VerticalTransistor Outline, VerticalOtherDual-In-Line PackagesOtherSmall Outline No-leadTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count334488333
Temperature Range~ 150.0°C~ 150.0°C-55.0°C ~ 150.0°C-30.0°C ~ 85.0°C-40.0°C ~ 85.0°C~ 150.0°C~ 150.0°C~ 150.0°C
Price$1.0400$0.7056$0.2227$0.4049$0.0438$0.1640$1.8943$1.1074$1.6948
StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVECONTACT MANUFACTURERACTIVEACTIVEACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Factory Lead Time13 Weeks16 Weeks13 Weeks13 Weeks13 Weeks
YTEOL5.95.97.3146.46.46.4
Avalanche Energy Rating (Eas)300 mJ300 mJ290 mJ350 mJ290 mJ
Case ConnectionISOLATEDISOLATEDISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODEBRIDGE, 4 ELEMENTSSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V600 V800 V700 V800 V
Drain Current-Max (ID)10 A10 A9 A8.6 A9 A
Drain-source On Resistance-Max0.75 Ω0.75 Ω0.9 Ω0.85 Ω0.9 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220ABTO-220ABTO-220ABTO-220ABTO-220AB
JESD-30 CodeR-PSFM-T3R-PSFM-T3R-PSFM-T4R-PDSO-N8R-PSFM-T3R-PSFM-T3R-PSFM-T3
JESD-609 Codee3e3e4e3e3e3
Number of Elements114111
Operating ModeENHANCEMENT MODEENHANCEMENT MODESYNCHRONOUSENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package StyleFLANGE MOUNTFLANGE MOUNTFLANGE MOUNTSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILEFLANGE MOUNTFLANGE MOUNTFLANGE MOUNT
Peak Reflow Temperature (Cel)260260NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Polarity/Channel TypeN-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)35 W115 W40 W35 W160 W
Pulsed Drain Current-Max (IDM)36 A36 A36 A34 A36 A
Qualification StatusNot QualifiedNot QualifiedNot QualifiedNot QualifiedNot QualifiedNot Qualified
Surface MountNONONONOYESNONONO
Terminal FinishMatte Tin (Sn)Matte Tin (Sn)Nickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn)Matte Tin (Sn)Matte Tin (Sn)
Terminal FormTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLENO LEADTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLE
Terminal PositionSINGLESINGLESINGLEDUALSINGLESINGLESINGLE
Transistor ApplicationSWITCHINGSWITCHINGSWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICONSILICONSILICONSILICON
Breakdown Voltage-Min1000 V
Diode Element MaterialSILICON
Diode TypeBRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)1 V
Non-rep Pk Forward Current-Max350 A
Number of Phases1
Output Current-Max4.2 A
Rep Pk Reverse Voltage-Max1000 V
Actuator ColorWHITE
Actuator Length0.039 inch
Actuator MaterialPOLYAMIDE6T
Actuator TypeSLIDE TYPE
Additional FeatureAPPROVAL: UL1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz
Body Breadth7.06 mm
Body ColorBLACK
Body Height3.5 mm
Body Length or Diameter7.01 mm
Center Contact MaterialCOPPER ALLOY
Center Contact PlatingGOLD OVER NICKEL
Contact Current(AC)-Max1 A
Contact Current(DC)-Max0.1 A
Contact (DC) Max Rating R Load0.1A@24VDC
Contact FunctionOFF-ON
Contact Resistance0.1 mΩ
Contact Voltage(DC)-Max24 V
Dielectric Withstand Volts300VAC V
Electrical Life1000 Cycle(s)
End Contact MaterialCOPPER ALLOY
End Contact PlatingGOLD OVER NICKEL
Housing MaterialPOLYPHENYLENE SULPHIDE
Insulation Resistance1000000000 Ω
Insulator MaterialPOLYPHENYLENE SULPHIDE
Mounting FeatureTHROUGH HOLE-RIGHT ANGLE
Number of Positions2
Number of Switch Sections2
PCB Hole Count4
Packing MethodTUBE
Switch ActionLATCHED
Switch FunctionSPST
Switch TypeSLIDE DIP SWITCH
Terminal Length0.157 inch
Terminal MaterialCOPPER ALLOY
Termination TypeSOLDER
Pbfree CodeYes
Manufacturer Package CodeUDFN-8
Clock Frequency-Max (fCLK)1 MHz
Data PollingYES
Data Retention Time-Min100
Endurance1000000 Write/Erase Cycles
I2C Control Byte1010DDXR
Memory Density4096 bit
Memory IC TypeEEPROM
Memory Width8
Number of Functions1
Number of Ports1
Number of Words512 words
Number of Words Code512
Organization512X8
Output CharacteristicsOPEN-DRAIN
Package Equivalence CodeSOLCC8,.12,20
Page Size16 words
Parallel/SerialSERIAL
Programming Voltage3 V
Serial Bus TypeI2C
Standby Current-Max8e-7 A
Supply Current-Max0.001 mA
Supply Voltage-Max (Vsup)3.6 V
Supply Voltage-Min (Vsup)2.5 V
Supply Voltage-Nom (Vsup)3 V
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal Pitch0.5 mm
Time@Peak Reflow Temperature-Max (s)40NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Write Cycle Time-Max (tWC)5 ms
Write ProtectionHARDWARE

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 8 alternatives for STP10NK60ZFP — response within 24 hours.

Quick Links

GBJ2510

suggested

ADE02A04

suggested

STP10NK80ZFPby STMicroelectronics

Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

STP10NK70ZFPby STMicroelectronics

Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

STP10NK80Zby STMicroelectronics

Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Why Look for Alternatives?

Finding alternatives for STP10NK60ZFP is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STP10NK60ZFP replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STP10NK60ZFP?

Known equivalents for STP10NK60ZFP include STP10NK60Z, GBJ2510, ADE02A04. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STP10NK60ZFP?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STP10NK60ZFP alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.