STL26N30M8 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STL26N30M8 is an N-channel MDmesh M8 superjunction power MOSFET rated at 300V and 23A with 72mΩ typical RDS(on) in a PowerFLAT 5x6 package. Features 580mJ avalanche energy rating and ultra-low feedback capacitance of 10pF. Available from stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 9
- Lifecycle
- ACTIVE UNCONFIRMED
- Datasheet
- STL26N30M8 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.2000(MOQ 100)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- MDmesh M8 superjunction technology delivers 72 mΩ typical RDS(on) at 300 V for low conduction losses in high-efficiency power conversion
- 580 mJ avalanche energy (Eas) rating provides robust unclamped inductive switching protection in motor drive and inverter applications
- Ultra-low feedback capacitance of 10 pF (Crss) minimizes switching losses and gate drive requirements at high frequencies
- PowerFLAT 5x6 compact surface-mount package enables high power density in space-constrained switch-mode power supply designs
Applications
The STL26N30M8 is optimized for high-efficiency switch-mode power supplies, DC-DC converters, and PFC stages operating at 300V bus voltages in industrial and telecom equipment. Its low 72mΩ RDS(on) and 23A drain current capacity make it suitable for synchronous rectification in server power supplies and solar inverter half-bridge topologies. The robust 580mJ avalanche rating also supports motor drive and class-D audio amplifier designs where inductive load switching is common.
Specifications
| Factory Lead Time | 53 Weeks, 1 Day |
| Avalanche Energy Rating (Eas) | 580mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 300V |
| Drain Current-Max (ID) | 23A |
| Drain-source On Resistance-Max | 0.089Ω |
| FET Technology | SUPERJUNCTION MOSFET |
| Feedback Cap-Max (Crss) | 10pF |
| JESD-30 Code | R-PDSO-F8 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 114W |
| Pulsed Drain Current-Max (IDM) | 69A |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the RDS(on) and drain current rating of STL26N30M8 and how do they affect conduction losses?
The STL26N30M8 has a typical RDS(on) of 72 mΩ and a maximum drain current of 23 A. At full load, conduction power loss is approximately P = I² × RDS(on) = 23² × 0.072 ≈ 38 W, which highlights the importance of proper thermal management. The low RDS(on) is achieved via MDmesh M8 superjunction technology, reducing losses versus standard MOSFETs of similar voltage class.
How does STL26N30M8 compare to standard 300V MOSFETs in switching applications?
STL26N30M8 uses superjunction MDmesh M8 technology, offering significantly lower RDS(on) of 72 mΩ typical compared to conventional planar 300V MOSFETs which typically exceed 150 mΩ at the same current rating. Its 10 pF feedback capacitance (Crss) also reduces switching energy losses, making it a preferred choice for high-frequency resonant and PWM power converters operating above 100 kHz.
What avalanche energy rating does STL26N30M8 provide and why does this matter for inductive load designs?
STL26N30M8 is rated for 580 mJ of avalanche energy (Eas), meaning it can safely absorb energy from inductive voltage spikes without damage during unclamped switching events. This is critical in motor drives, relay coil drivers, and inverter designs where stray inductance can generate transient voltages exceeding the 300V drain-source breakdown voltage.
What package does STL26N30M8 come in and what PCB footprint does it require?
STL26N30M8 is housed in a PowerFLAT 5x6 mm surface-mount package with 8 leads and a drain-connected exposed pad on the underside. This compact 5mm by 6mm footprint allows high power density layouts, and the exposed pad enables direct thermal conduction to a PCB copper pour or external heatsink for effective heat dissipation at up to 23 A drain current.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $2.2100 | $221.00 |
| 500+ | $1.8100 | $905.00 |
| 3000+ | $1.2000 | $3600.00 |
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