STH315N10F7-2Alternatives & Equivalent Parts

About STH315N10F7-2

STH315N10F7-2 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTH315N10F7-2SourceSTH240N10F7-2STH315N10F7-6
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeOtherOtherOther
Pin Count337
Temperature Range-55.0°C ~~ 175.0°C-55.0°C ~
Price$1.8000$1.6375$1.8563
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVE
Electrical Parameters
Factory Lead Time26 Weeks26 Weeks26 Weeks
YTEOL5.95.95.9
Additional FeatureULTRA LOW RESISTANCEULTRA LOW RESISTANCEULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas)1000 mJ500 mJ1000 mJ
Case ConnectionDRAINDRAINDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V100 V100 V
Drain Current-Max (ID)180 A180 A180 A
Drain-source On Resistance-Max0.0023 Ω0.0025 Ω0.0023 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeR-PSSO-G2R-PSSO-G2R-PSSO-G6
JESD-609 Codee3e3e3
Number of Elements111
Operating ModeENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)245245260
Polarity/Channel TypeN-CHANNELN-CHANNELN-CHANNEL
Pulsed Drain Current-Max (IDM)720 A720 A720 A
Reference StandardAEC-Q101AEC-Q101
Surface MountYESYESYES
Terminal FinishMatte Tin (Sn) - annealedMatte Tin (Sn) - annealedMatte Tin (Sn) - annealed
Terminal FormGULL WINGGULL WINGGULL WING
Terminal PositionSINGLESINGLESINGLE
Transistor ApplicationSWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICONSILICON
## STH315N10F7-2 Alternates Showing resultsImage
Power Dissipation-Max (Abs)300 W

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for STH315N10F7-2 — response within 24 hours.

Quick Links

STH240N10F7-2by STMicroelectronics

Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

STH315N10F7-6by STMicroelectronics

Power Field-Effect Transistor, 180A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Why Look for Alternatives?

Finding alternatives for STH315N10F7-2 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STH315N10F7-2 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STH315N10F7-2?

Known equivalents for STH315N10F7-2 include STH240N10F7-2, STH315N10F7-6. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STH315N10F7-2?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STH315N10F7-2 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.