STH315N10F7-2 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STH315N10F7-2 is an ultra-low resistance N-channel power MOSFET in H2PAK-3/2 package, rated 180 A and 100 V. It features an exceptional RDS(on) of 0.0023 Ω and 1000 mJ avalanche energy for robust high-current switching. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STH315N10F7-2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.8000(MOQ 10)
- Temp Range
- -55.0°C to ?°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STH315N10F7-2?
- Industry-leading RDS(on) of 0.0023 Ω at 180 A delivers ultra-low conduction losses in high-current DC-DC stages
- 1000 mJ avalanche energy rating ensures exceptional ruggedness in automotive and industrial motor drive switching
- H2PAK-3/2 power package maximizes thermal dissipation for continuous 180 A operation in demanding power modules
What is STH315N10F7-2 used for?
The STH315N10F7-2 is engineered for high-current automotive DC-DC converters, 48 V mild-hybrid power stages, and industrial servo drives where 100 V blocking voltage and ultra-low resistance at 180 A minimize system losses. Its extraordinary 1000 mJ avalanche energy makes it suitable for battery charging switches subject to voltage transients in electric vehicle powertrains. The H2PAK surface-mount package integrates directly into multi-phase power modules targeting sub-1 mΩ total conduction resistance.
What are the specifications of STH315N10F7-2?
| Factory Lead Time | 26Weeks |
| YTEOL | 5.9 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 1000mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 180A |
| Drain-source On Resistance-Max | 0.0023Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 720A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| ## STH315N10F7-2 Alternates Showing results | Image |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STH315N10F7-2 datasheet?
STH315N10F7-2 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STH315N10F7-2?
Compatible alternatives and drop-in replacements for STH315N10F7-2:
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 180A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Frequently Asked Questions
What makes the STH315N10F7-2 stand out in high-current DC-DC converter designs?
The STH315N10F7-2 achieves an ultra-low maximum RDS(on) of 0.0023 Ω, which at 100 A produces only 23 W of conduction loss — significantly lower than standard 100 V MOSFETs in this current class. Combined with a 180 A continuous rating, it enables high-efficiency multi-phase buck converters with fewer parallel devices compared to higher-resistance alternatives.
How does the 1000 mJ avalanche energy rating benefit motor drive reliability?
The 1000 mJ single-pulse avalanche energy (EAS) of the STH315N10F7-2 absorbs inductive kickback from motor windings with several millihenry inductance at 180 A without junction damage, providing a large safety margin beyond typical EAS ratings of 100 mJ to 300 mJ found in competing devices. This robustness reduces system-level protection circuit complexity in brushless DC and stepper motor inverters.
For a 48 V automotive mild-hybrid system, why is 100 V breakdown sufficient for the STH315N10F7-2?
A 48 V nominal bus in mild-hybrid systems reaches at most 60 V to 70 V under load dump transients, giving the 100 V rated STH315N10F7-2 a comfortable 30% to 40% margin while operating in the voltage sweet spot where RDS(on) can be minimized to 0.0023 Ω. Choosing a higher-voltage rating for this application would increase on-resistance due to the fundamental RDS(on)-BVdss tradeoff.
Which H2PAK package alternatives exist if the STH315N10F7-2 has a 26-week lead time?
STMicroelectronics offers similar ultra-low-resistance N-channel MOSFETs in TO-247 and D2PAK packages within the same 100 V, 0.002 Ω to 0.004 Ω RDS(on) class, such as the STL series, which may carry shorter 8-week to 13-week lead times from secondary distributors. Engineering evaluation with TO-247 variants is feasible since both provide 100 V, 180 A class performance with equivalent gate drive requirements.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $3.6890 | $36.89 |
| 100+ | $2.5050 | $250.50 |
| 500+ | $2.3330 | $1166.50 |
| 1000+ | $1.8370 | $1837.00 |
| 4000+ | $1.8333 | $7333.32 |
| 8000+ | $1.8000 | $14400.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)