STH240N10F7-2Alternatives & Equivalent Parts
About STH240N10F7-2
STH240N10F7-2 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STH240N10F7-2Source | M24128-BRMN6P | M24C16-DFCU6TP/K | M95320-DFMN6TP | STB18N55M5 | STF100N10F7 | STH240N10F7-6 |
|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Other | Small Outline Packages | BGA | Small Outline Packages | Other | Transistor Outline, Vertical | Other |
| Pin Count | 3 | 8 | 4 | 8 | 4 | 3 | 7 |
| Temperature Range | ~ 175.0°C | -40.0°C ~ 85.0°C | -40.0°C ~ 85.0°C | -40.0°C ~ 85.0°C | ~ 150.0°C | ~ 175.0°C | ~ 175.0°C |
| Price | $1.6375 | $0.1660 | $0.1607 | $0.2161 | $1.5125 | $0.8720 | $1.6580 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE UNCONFIRMED | ACTIVE | ACTIVE | OBSOLETE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||||
| Factory Lead Time | 26 Weeks | 4 Weeks | 10 Weeks | 8 Weeks | — | 13 Weeks | 26 Weeks |
| YTEOL | 5.9 | 2 | 6 | 9 | 0 | 6 | 5.9 |
| Additional Feature | ULTRA LOW RESISTANCE | — | — | — | ULTRA-LOW RESISTANCE | — | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 500 mJ | — | — | — | 200 mJ | 400 mJ | 500 mJ |
| Case Connection | DRAIN | — | — | — | — | ISOLATED | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | — | — | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | — | — | — | 550 V | 100 V | 100 V |
| Drain Current-Max (ID) | 180 A | — | — | — | 13 A | 32 A | 180 A |
| Drain-source On Resistance-Max | 0.0025 Ω | — | — | — | 0.24 Ω | 0.008 Ω | 0.0025 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 | R-PDSO-G8 | R-PBGA-B4 | R-PDSO-G8 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G6 |
| JESD-609 Code | e3 | e4 | — | e4 | e3 | — | e3 |
| Number of Elements | 1 | — | — | — | 1 | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | SYNCHRONOUS | SYNCHRONOUS | — | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 | — | 260 | 260 | 245 | NOT SPECIFIED | 260 |
| Polarity/Channel Type | N-CHANNEL | — | — | — | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300 W | — | — | — | 90 W | 30 W | 300 W |
| Pulsed Drain Current-Max (IDM) | 720 A | — | — | — | 52 A | 180 A | 720 A |
| Surface Mount | YES | YES | YES | YES | YES | NO | YES |
| Terminal Finish | Matte Tin (Sn) - annealed | Nickel/Palladium/Gold (Ni/Pd/Au) | — | NICKEL PALLADIUM GOLD | MATTE TIN | — | Matte Tin (Sn) |
| Terminal Form | GULL WING | GULL WING | BALL | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
| Terminal Position | SINGLE | DUAL | BOTTOM | DUAL | SINGLE | SINGLE | SINGLE |
| Transistor Application | SWITCHING | — | — | — | SWITCHING | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON | — | — | — | SILICON | SILICON | SILICON |
| Clock Frequency-Max (fCLK) | — | 0.4 MHz | 0.4 MHz | — | — | — | — |
| Data Retention Time-Min | — | 200 | — | 200 | — | — | — |
| Endurance | — | 4000000 Write/Erase Cycles | — | 4000000 Write/Erase Cycles | — | — | — |
| I2C Control Byte | — | 1010DDDR | — | — | — | — | — |
| Memory Density | — | 131072 bit | 16384 bit | 32768 bit | — | — | — |
| Memory IC Type | — | EEPROM | EEPROM | EEPROM | — | — | — |
| Memory Width | — | 8 | 8 | 8 | — | — | — |
| Number of Functions | — | 1 | 1 | — | — | — | — |
| Number of Words | — | 16384 words | 2048 words | 4096 words | — | — | — |
| Number of Words Code | — | 16000 | 2000 | 4000 | — | — | — |
| Organization | — | 16KX8 | 2KX8 | 4KX8 | — | — | — |
| Package Equivalence Code | — | SOP8,.25 | — | SOP8,.25 | — | — | — |
| Parallel/Serial | — | SERIAL | SERIAL | SERIAL | — | — | — |
| Qualification Status | — | Not Qualified | — | Not Qualified | — | — | — |
| Serial Bus Type | — | I2C | I2C | SPI | — | — | — |
| Standby Current-Max | — | 0.000001 A | — | 0.000001 A | — | — | — |
| Supply Current-Max | — | 0.0025 mA | — | 0.005 mA | — | — | — |
| Supply Voltage-Max (Vsup) | — | 5.5 V | 5.5 V | — | — | — | — |
| Supply Voltage-Min (Vsup) | — | 1.8 V | 1.6 V | — | — | — | — |
| Supply Voltage-Nom (Vsup) | — | 2.5 V | 1.8 V | — | — | — | — |
| Technology | — | CMOS | CMOS | CMOS | — | — | — |
| Temperature Grade | — | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | — | — | — |
| Terminal Pitch | — | 1.27 mm | 0.4 mm | 1.27 mm | — | — | — |
| Write Cycle Time-Max (tWC) | — | 5 ms | — | — | — | — | — |
| Write Protection | — | HARDWARE | — | HARDWARE/SOFTWARE | — | — | — |
| ## M24128-BRMN6P Alternates Showing results | — | Image | — | — | — | — | — |
| Time@Peak Reflow Temperature-Max (s) | — | — | 30 | 30 | 30 | NOT SPECIFIED | NOT SPECIFIED |
| JEDEC-95 Code | — | — | — | — | TO-263AB | TO-220AB | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 6 alternatives for STH240N10F7-2 — response within 24 hours.
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Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Why Look for Alternatives?
Finding alternatives for STH240N10F7-2 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STH240N10F7-2 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STH240N10F7-2?
Known equivalents for STH240N10F7-2 include M24128-BRMN6P, M24C16-DFCU6TP/K, M95320-DFMN6TP. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STH240N10F7-2?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STH240N10F7-2 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.