STGO30H60DLLFBAG STMicroelectronics Integrated Circuit (Other) In Stock
STMicroelectronics STGO30H60DLLFBAG is an automotive-grade 600 V, 30 A trench gate field-stop IGBT in the high-speed HB series, housed in a TO-LL package. Qualified to AEC-Q101 for demanding automotive powertrain and charging applications. Features low conduction losses and fast switching for efficient high-frequency inverter operation up to 260°C peak reflow temperature.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 12
- Lifecycle
- ACTIVE
- Datasheet
- STGO30H60DLLFBAG Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGO30H60DLLFBAG?
- 600 V collector-emitter voltage and 30 A continuous collector current for medium-power automotive inverter stages
- Trench gate field-stop technology minimizes conduction losses and tail current for high-frequency switching
- AEC-Q101 automotive-qualified (FBAG suffix) ensuring reliability in powertrain and EV charging environments
- TO-LL (low-loss) package with matte tin (Sn) terminal finish supports reflow soldering at up to 260°C
- High-speed HB series optimized for switching frequencies above 20 kHz in motor drive and OBC applications
What is STGO30H60DLLFBAG used for?
The STGO30H60DLLFBAG is designed for automotive traction inverters, on-board chargers (OBC), and DC-DC converters in hybrid and electric vehicles where AEC-Q101 reliability and 600 V blocking voltage are mandatory. Its trench gate field-stop structure reduces switching losses at frequencies up to 30 kHz, making it suitable for high-efficiency motor control in e-bike drives and industrial servo amplifiers. The TO-LL package enables board-mounted discrete power stage designs with peak reflow capability of 260°C for standard SMT assembly processes.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGO30H60DLLFBAG datasheet?
STGO30H60DLLFBAG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGO30H60DLLFBAG?
Compatible alternatives and drop-in replacements for STGO30H60DLLFBAG:
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Frequently Asked Questions
What voltage and current ratings does the STGO30H60DLLFBAG provide, and what power stage level does this target?
The STGO30H60DLLFBAG is rated at 600 V collector-emitter voltage (VCES) and 30 A continuous collector current (IC), making it appropriate for medium-power three-phase inverter legs driving motors from 3 kW to 15 kW depending on switching frequency and thermal management. At 30 A per switch and a typical 600 V bus for 400 V AC-input OBC applications, the device can control significant power without requiring paralleled IGBTs in most automotive sub-system designs.
How does the trench gate field-stop technology in the STGO30H60DLLFBAG reduce inverter switching losses compared to planar IGBTs?
Trench gate technology increases channel density and lowers the threshold voltage, reducing saturation voltage (VCEsat) compared to planar gate IGBTs at the same current rating — typically by 0.3 V to 0.5 V at 30 A. The field-stop layer compresses the tail current during turn-off, shortening the turn-off energy (Eoff) by 20% to 40% versus standard punch-through IGBTs. At a 20 kHz switching frequency and 30 A load, these reductions can translate to several watts of lower switching loss per device in a 3-phase inverter with 6 IGBTs.
What does the AEC-Q101 automotive qualification (FBAG suffix) mean for procurement and reliability screening?
AEC-Q101 qualification means the STGO30H60DLLFBAG has passed a standardized stress test suite for automotive discrete semiconductors including HTRB (high-temperature reverse bias at 80% VCES for 1,000 hours), H3TRB (temperature-humidity-bias), and thermal cycling across -40°C to +150°C. The FBAG suffix specifically designates the automotive-qualified, RoHS-compliant, and halogen-free version. Procurement engineers specifying parts for ISO 26262 functional-safety designs should confirm the device's PPAP (production part approval process) documentation with STMicroelectronics to meet Tier-1 supplier quality requirements.
For an e-bike motor controller operating at 48 V bus, is the STGO30H60DLLFBAG's 600 V rating necessary or would a 100 V MOSFET be more efficient?
For a 48 V bus e-bike drive, a 100 V N-channel MOSFET would typically be more efficient than the STGO30H60DLLFBAG because MOSFETs at 100 V have much lower on-resistance (RDS(on) in the milliohm range) than an IGBT's VCEsat of approximately 1.5 V to 2 V, leading to significantly lower conduction loss at the sub-10 A phase currents typical in e-bike motors. The 600 V IGBT is best reserved for designs where the DC bus exceeds 300 V, such as 400 V EV traction systems or single-phase PFC rectifiers, where MOSFETs with adequate voltage ratings become prohibitively expensive or lossy.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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