STGB14NC60KD STMicroelectronics Integrated Circuit (D2PAK) In Stock

STGB14NC60KD is an N-channel IGBT rated at 600 V collector-emitter voltage and 25 A maximum collector current, with an integrated anti-parallel freewheeling diode. Gate-emitter threshold is up to 6.5 V and maximum gate-emitter voltage is 20 V. The 3-pin D2PAK (TO-263) surface-mount package suits motor drives, inverters, and switching power supplies.

ACTIVEIntegrated CircuitVerified May 2026
Package / Visual Reference
STGB14NC60KDIC Package
Quick Facts
Manufacturer
STMicroelectronics
Package
Pin Count
3
Lifecycle
ACTIVE
Category
Integrated Circuit
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600 V collector-emitter breakdown voltage for mains-connected switching stages
  • 25 A maximum collector current for kilowatt-class motor and inverter loads
  • Integrated co-packaged freewheeling diode eliminates external antiparallel diode
  • 6.5 V maximum gate-emitter threshold voltage for standard gate-drive compatibility
  • 20 V maximum gate-emitter voltage for reliable enhancement-mode control
  • D2PAK (TO-263) surface-mount package for PCB-mounted power stages
  • Single N-channel element in a compact 3-pin body

Applications

The STGB14NC60KD is used in single-phase and three-phase motor inverters for HVAC compressors, industrial fans, and pump drives operating from a 400 V rectified mains bus. Its integrated freewheeling diode simplifies the switching cell in half-bridge and full-bridge power stage designs for welding inverters and UPS modules. Switched-mode power supply topologies such as flyback and full-bridge converters also rely on its 600 V, 25 A capability at switching frequencies up to tens of kilohertz.

Specifications

Pbfree CodeYes
YTEOL5.4
Collector Current-Max (IC)25A
Collector-Emitter Voltage-Max600V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max6.5V
Gate-Emitter Voltage-Max20V
JEDEC-95 CodeTO-263AA
JESD-30 CodeR-PSSO-G2
Number of Elements1
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Qualification StatusNot Qualified
Surface MountYES
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
Turn-off Time-Nom (toff)340ns
Turn-on Time-Nom (ton)31.5ns

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Datasheet

STGB14NC60KD Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

Why does the STGB14NC60KD include an integrated diode, and what does that mean for a half-bridge inverter design?

The built-in anti-parallel freewheeling diode conducts inductive flyback current during the dead time between high-side and low-side switch transitions. In a half-bridge inverter, this eliminates the need for a discrete external diode in parallel with each IGBT, reducing component count by 2 per phase leg and saving PCB space while ensuring the inductive load current has a return path at 600 V.

At what collector-emitter voltage and collector current is the STGB14NC60KD rated, and what power class does this support?

The device is rated to 600 V collector-emitter and 25 A peak collector current. In a 400 V DC bus motor inverter operating at up to 15 A RMS per phase, this provides adequate margin. A three-phase inverter using 6 of these IGBTs can drive loads in the 4 kW to 7 kW range depending on switching frequency and heatsink design.

How does the D2PAK surface-mount package of the STGB14NC60KD handle thermal dissipation compared to a through-hole TO-247?

The D2PAK (TO-263) package has a large exposed metal pad on its underside that solders directly to a PCB copper pour or thermal via array, giving a junction-to-board thermal resistance typically in the 1°C/W to 5°C/W range depending on copper area. The through-hole TO-247 mounts to an external heatsink with lower total thermal resistance, but D2PAK avoids heatsink hardware and suits automated SMT assembly lines for higher-volume production.

Is a 15 V gate drive sufficient to fully enhance the STGB14NC60KD, and does it need a negative turn-off voltage?

The gate-emitter threshold is 6.5 V maximum, so a standard 15 V gate-drive pulse fully saturates the IGBT with ample margin. A negative turn-off bias of −5 V to −8 V is typically recommended in motor inverter applications to guard against parasitic turn-on caused by collector dV/dt through the Miller capacitance, ensuring reliable hard-switching at 600 V bus voltage.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy