STF100N10F7Alternatives & Equivalent Parts
About STF100N10F7
STF100N10F7 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STF100N10F7Source | M24128-BRMN6P | M24C16-DFCU6TP/K | M95320-DFMN6TP | STB18N55M5 |
|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Small Outline Packages | BGA | Small Outline Packages | Other |
| Pin Count | 3 | 8 | 4 | 8 | 4 |
| Temperature Range | ~ 175.0°C | -40.0°C ~ 85.0°C | -40.0°C ~ 85.0°C | -40.0°C ~ 85.0°C | ~ 150.0°C |
| Price | $0.8720 | $0.1660 | $0.1607 | $0.2161 | $1.5125 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE UNCONFIRMED | ACTIVE | ACTIVE | OBSOLETE |
| Electrical Parameters | |||||
| Factory Lead Time | 13 Weeks | 4 Weeks | 10 Weeks | 8 Weeks | — |
| YTEOL | 6 | 2 | 6 | 9 | 0 |
| Avalanche Energy Rating (Eas) | 400 mJ | — | — | — | 200 mJ |
| Case Connection | ISOLATED | — | — | — | — |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | — | — | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | — | — | — | 550 V |
| Drain Current-Max (ID) | 32 A | — | — | — | 13 A |
| Drain-source On Resistance-Max | 0.008 Ω | — | — | — | 0.24 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB | — | — | — | TO-263AB |
| JESD-30 Code | R-PSFM-T3 | R-PDSO-G8 | R-PBGA-B4 | R-PDSO-G8 | R-PSSO-G2 |
| Number of Elements | 1 | — | — | — | 1 |
| Operating Mode | ENHANCEMENT MODE | SYNCHRONOUS | SYNCHRONOUS | — | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | FLANGE MOUNT | SMALL OUTLINE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | — | 260 | 260 | 245 |
| Polarity/Channel Type | N-CHANNEL | — | — | — | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30 W | — | — | — | 90 W |
| Pulsed Drain Current-Max (IDM) | 180 A | — | — | — | 52 A |
| Surface Mount | NO | YES | YES | YES | YES |
| Terminal Form | THROUGH-HOLE | GULL WING | BALL | GULL WING | GULL WING |
| Terminal Position | SINGLE | DUAL | BOTTOM | DUAL | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | — | 30 | 30 | 30 |
| Transistor Application | SWITCHING | — | — | — | SWITCHING |
| Transistor Element Material | SILICON | — | — | — | SILICON |
| Clock Frequency-Max (fCLK) | — | 0.4 MHz | 0.4 MHz | — | — |
| Data Retention Time-Min | — | 200 | — | 200 | — |
| Endurance | — | 4000000 Write/Erase Cycles | — | 4000000 Write/Erase Cycles | — |
| I2C Control Byte | — | 1010DDDR | — | — | — |
| JESD-609 Code | — | e4 | — | e4 | e3 |
| Memory Density | — | 131072 bit | 16384 bit | 32768 bit | — |
| Memory IC Type | — | EEPROM | EEPROM | EEPROM | — |
| Memory Width | — | 8 | 8 | 8 | — |
| Number of Functions | — | 1 | 1 | — | — |
| Number of Words | — | 16384 words | 2048 words | 4096 words | — |
| Number of Words Code | — | 16000 | 2000 | 4000 | — |
| Organization | — | 16KX8 | 2KX8 | 4KX8 | — |
| Package Equivalence Code | — | SOP8,.25 | — | SOP8,.25 | — |
| Parallel/Serial | — | SERIAL | SERIAL | SERIAL | — |
| Qualification Status | — | Not Qualified | — | Not Qualified | — |
| Serial Bus Type | — | I2C | I2C | SPI | — |
| Standby Current-Max | — | 0.000001 A | — | 0.000001 A | — |
| Supply Current-Max | — | 0.0025 mA | — | 0.005 mA | — |
| Supply Voltage-Max (Vsup) | — | 5.5 V | 5.5 V | — | — |
| Supply Voltage-Min (Vsup) | — | 1.8 V | 1.6 V | — | — |
| Supply Voltage-Nom (Vsup) | — | 2.5 V | 1.8 V | — | — |
| Technology | — | CMOS | CMOS | CMOS | — |
| Temperature Grade | — | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | — |
| Terminal Finish | — | Nickel/Palladium/Gold (Ni/Pd/Au) | — | NICKEL PALLADIUM GOLD | MATTE TIN |
| Terminal Pitch | — | 1.27 mm | 0.4 mm | 1.27 mm | — |
| Write Cycle Time-Max (tWC) | — | 5 ms | — | — | — |
| Write Protection | — | HARDWARE | — | HARDWARE/SOFTWARE | — |
| ## M24128-BRMN6P Alternates Showing results | — | Image | — | — | — |
| Additional Feature | — | — | — | — | ULTRA-LOW RESISTANCE |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 4 alternatives for STF100N10F7 — response within 24 hours.
Quick Links
Why Look for Alternatives?
Finding alternatives for STF100N10F7 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STF100N10F7 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STF100N10F7?
Known equivalents for STF100N10F7 include M24128-BRMN6P, M24C16-DFCU6TP/K, M95320-DFMN6TP. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STF100N10F7?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STF100N10F7 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.