STD6NF10 STMicroelectronics Integrated Circuit (TO-XXX (Inc. DPAK)) In Stock
STD6NF10 is an N-channel power MOSFET from STMicroelectronics with a 100V drain-source breakdown voltage, 6A maximum drain current, and a maximum on-resistance of 0.25 ohm in a 3-pin D-PAK (TO-252) package. It includes a built-in diode and a 200mJ avalanche energy rating for robust switching. Available from authorized distributors worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- TO-XXX (Inc. DPAK)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STD6NF10 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD6NF10?
- 100V breakdown voltage and 6A drain current enabling robust power switching in DC-DC converters and motor drives
- Low 0.25 ohm maximum drain-source on-resistance reducing conduction losses and heat generation in high-efficiency designs
- 200mJ avalanche energy rating providing exceptional ruggedness for inductive load switching and unclamped switching applications
What is STD6NF10 used for?
The STD6NF10 is used in switching power supplies, DC-DC converters, and motor drive circuits where efficient control of 100V loads at up to 6A is required. Its low on-resistance minimizes power dissipation in continuous conduction, making it suitable for synchronous rectification and load switch applications in industrial and consumer electronics. The built-in diode and high avalanche energy rating make it well-suited for driving inductive loads such as relays, solenoids, and small motors.
What are the specifications of STD6NF10?
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 200mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 0.25Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 24A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | TO-XXX (Inc. DPAK) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the STD6NF10 datasheet?
STD6NF10 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD6NF10?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STD6NF10?
The STD6NF10 is rated for a drain-source breakdown voltage of 100V minimum and a maximum drain current of 6A. These ratings make it suitable for power switching applications in industrial and consumer power supplies, motor controllers, and DC-DC converters operating at up to 100V.
What is the drain-source on-resistance of the STD6NF10?
The STD6NF10 has a maximum drain-source on-resistance (RDS(on)) of 0.25 ohm. This low on-resistance minimizes conduction losses when the MOSFET is fully enhanced, improving overall efficiency in power conversion circuits and reducing thermal management requirements.
What package does the STD6NF10 use, and does it include a built-in diode?
The STD6NF10 is housed in a 3-pin D-PAK (TO-252) surface-mount package, which provides good thermal dissipation through the exposed drain tab. It includes a built-in body diode, enabling its use in applications such as synchronous rectification and H-bridge motor drives where a freewheeling diode is required.
What avalanche energy rating does the STD6NF10 have?
The STD6NF10 is rated for an avalanche energy (Eas) of 200mJ. This high avalanche rating provides ruggedness when switching inductive loads, as it allows the device to safely absorb energy from inductive voltage spikes without damage, making it a reliable choice for relay and solenoid driver circuits.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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