STD20NF06 STMicroelectronics Integrated Circuit (TO-XXX (Inc. DPAK)) In Stock
STMicroelectronics STD20NF06 is an N-channel power MOSFET rated at 60V drain-source breakdown voltage and 24A drain current with 40 mΩ on-resistance, packaged in a TO-252 (DPAK) surface-mount case with an integrated flyback diode. Available in stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- TO-XXX (Inc. DPAK)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD20NF06 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD20NF06?
- 24A continuous drain current at 25°C with only 40 mΩ R_DS(on), enabling highly efficient DC motor driving and synchronous rectification in compact designs
- 60V drain-source breakdown voltage with 300 mJ avalanche energy rating provides robust transient overvoltage protection in inductive load switching applications
- TO-252 (DPAK) surface-mount package with exposed drain pad delivers superior thermal dissipation in space-constrained PCB layouts
What is STD20NF06 used for?
The STD20NF06 is widely used in automotive and industrial DC motor control, solenoid drivers, and switching power supplies where a 60V-rated N-channel MOSFET with low on-resistance is required. Its 24A current handling and 300 mJ avalanche energy rating make it robust against inductive kickback in relay driver and H-bridge circuits operating from 12V or 24V bus systems. The DPAK footprint enables efficient heat sinking directly to the PCB copper pour without a separate heatsink, reducing system volume in motor drivers, LED lighting drivers, and battery management circuits.
What are the specifications of STD20NF06?
| Pbfree Code | Yes |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 300mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 24A |
| Drain-source On Resistance-Max | 0.04Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 60W |
| Pulsed Drain Current-Max (IDM) | 96A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | TO-XXX (Inc. DPAK) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the STD20NF06 datasheet?
STD20NF06 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD20NF06?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How much power does the STD20NF06 dissipate when switching a 10A load and what thermal management is needed in a DPAK layout?
At 10A and 40 mΩ R_DS(on), the STD20NF06 dissipates P = I² × R = 100 × 0.04 = 4W of conduction loss. The TO-252 (DPAK) package has a typical thermal resistance of R_θJA = 50°C/W without a heatsink, causing a 200°C junction rise over ambient at 4W — exceeding the 150°C maximum junction temperature. A 2 oz copper pour of at least 6 cm² is required to reduce R_θJA below 30°C/W, keeping the junction under 120°C at 25°C ambient.
What is the avalanche energy rating of the STD20NF06 and how does it protect inductive-load circuits from overvoltage spikes?
The STD20NF06 is rated for 300 mJ of single-pulse avalanche energy (E_AS), meaning it can safely absorb a 300 mJ transient when the drain voltage exceeds 60V during inductive turn-off. For a 1 mH motor winding carrying 10A, the stored energy is E = ½LI² = 50 mJ, well within the 300 mJ rating, allowing the MOSFET to clamp the spike without a discrete transient-voltage suppressor in many designs.
Can the STD20NF06 be driven directly from a 3.3V microcontroller GPIO, and what gate voltage ensures full enhancement?
The STD20NF06 requires a gate-source voltage (V_GS) of at least 4.5V to 5V to reach its specified 40 mΩ R_DS(on), meaning a 3.3V GPIO output is insufficient for full enhancement. A gate driver or level-shifting circuit boosting V_GS to 10V is recommended to achieve the 24A rated current with minimum on-resistance. At V_GS = 5V the device turns on but R_DS(on) rises to approximately 55-70 mΩ, limiting maximum current to about 15A before thermal limits are reached.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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