STD20NF06 STMicroelectronics Integrated Circuit (TO-XXX (Inc. DPAK)) In Stock
STMicroelectronics STD20NF06 is an N-channel power MOSFET rated at 60V drain-source breakdown voltage and 24A drain current with 40 mΩ on-resistance, packaged in a TO-252 (DPAK) surface-mount case with an integrated flyback diode. Available in stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- TO-XXX (Inc. DPAK)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD20NF06 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 24A continuous drain current at 25°C with only 40 mΩ R_DS(on), enabling highly efficient DC motor driving and synchronous rectification in compact designs
- 60V drain-source breakdown voltage with 300 mJ avalanche energy rating provides robust transient overvoltage protection in inductive load switching applications
- TO-252 (DPAK) surface-mount package with exposed drain pad delivers superior thermal dissipation in space-constrained PCB layouts
Applications
The STD20NF06 is widely used in automotive and industrial DC motor control, solenoid drivers, and switching power supplies where a 60V-rated N-channel MOSFET with low on-resistance is required. Its 24A current handling and 300 mJ avalanche energy rating make it robust against inductive kickback in relay driver and H-bridge circuits operating from 12V or 24V bus systems. The DPAK footprint enables efficient heat sinking directly to the PCB copper pour without a separate heatsink, reducing system volume in motor drivers, LED lighting drivers, and battery management circuits.
Specifications
| Pbfree Code | Yes |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 300mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 24A |
| Drain-source On Resistance-Max | 0.04Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 60W |
| Pulsed Drain Current-Max (IDM) | 96A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | TO-XXX (Inc. DPAK) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How much power does the STD20NF06 dissipate when switching a 10A load and what thermal management is needed in a DPAK layout?
At 10A and 40 mΩ R_DS(on), the STD20NF06 dissipates P = I² × R = 100 × 0.04 = 4W of conduction loss. The TO-252 (DPAK) package has a typical thermal resistance of R_θJA = 50°C/W without a heatsink, causing a 200°C junction rise over ambient at 4W — exceeding the 150°C maximum junction temperature. A 2 oz copper pour of at least 6 cm² is required to reduce R_θJA below 30°C/W, keeping the junction under 120°C at 25°C ambient.
What is the avalanche energy rating of the STD20NF06 and how does it protect inductive-load circuits from overvoltage spikes?
The STD20NF06 is rated for 300 mJ of single-pulse avalanche energy (E_AS), meaning it can safely absorb a 300 mJ transient when the drain voltage exceeds 60V during inductive turn-off. For a 1 mH motor winding carrying 10A, the stored energy is E = ½LI² = 50 mJ, well within the 300 mJ rating, allowing the MOSFET to clamp the spike without a discrete transient-voltage suppressor in many designs.
Can the STD20NF06 be driven directly from a 3.3V microcontroller GPIO, and what gate voltage ensures full enhancement?
The STD20NF06 requires a gate-source voltage (V_GS) of at least 4.5V to 5V to reach its specified 40 mΩ R_DS(on), meaning a 3.3V GPIO output is insufficient for full enhancement. A gate driver or level-shifting circuit boosting V_GS to 10V is recommended to achieve the 24A rated current with minimum on-resistance. At V_GS = 5V the device turns on but R_DS(on) rises to approximately 55-70 mΩ, limiting maximum current to about 15A before thermal limits are reached.
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