STD13NM60NDAlternatives & Equivalent Parts
About STD13NM60ND
STD13NM60ND is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
Need pricing on these alternatives?
Get one quote covering all 3 alternatives for STD13NM60ND — response within 24 hours.
Specification Comparison
| Parameter | STD13NM60NDSource | STD13NM60N | VEMT2520X01 | ADP7102ARDZ-R7 |
|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | Vishay | Analog Devices |
| Package Type | Other | TO-XXX (Inc. DPAK) | Other | Small Outline Packages |
| Pin Count | 3 | 3 | 2 | 8 |
| Temperature Range | ~ 150.0°C | ~ 150.0°C | -40.0°C ~ 100.0°C | — |
| Price | $1.4623 | $1.0900 | $0.1235 | $2.2100 |
| Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | ||||
| YTEOL | 6 | 0 | 7 | 10 |
| Avalanche Energy Rating (Eas) | 162 mJ | 200 mJ | — | — |
| Case Connection | DRAIN | — | — | — |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | — |
| DS Breakdown Voltage-Min | 600 V | 600 V | — | — |
| Drain Current-Max (ID) | 11 A | 11 A | — | — |
| Drain-source On Resistance-Max | 0.38 Ω | 0.36 Ω | — | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | — |
| JEDEC-95 Code | TO-252 | TO-252 | — | — |
| JESD-30 Code | R-PSSO-G2 | R-PSSO-G2 | — | R-PDSO-G8 |
| JESD-609 Code | e3 | e3 | — | e3 |
| Number of Elements | 1 | 1 | — | — |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | — | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | — | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | — | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | — | SMALL OUTLINE, HEAT SINK/SLUG |
| Peak Reflow Temperature (Cel) | 260 | 260 | — | 260 |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | — | — |
| Pulsed Drain Current-Max (IDM) | 44 A | 44 A | — | — |
| Surface Mount | YES | YES | YES | YES |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) - annealed | — | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING | GULL WING | — | GULL WING |
| Terminal Position | SINGLE | SINGLE | — | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 30 | — | 30 |
| Transistor Application | SWITCHING | SWITCHING | — | — |
| Transistor Element Material | SILICON | SILICON | — | — |
| ## STD13NM60ND Alternates Showing results | Image | — | — | — |
| Factory Lead Time | — | 14 Weeks | — | — |
| Power Dissipation-Max (Abs) | — | 90 W | — | — |
| Qualification Status | — | Not Qualified | — | Not Qualified |
| Additional Feature | — | — | HIGH RADIANT SENSITIVITY | — |
| Coll-Emtr Bkdn Voltage-Min | — | — | 20 V | — |
| Dark Current-Max | — | — | 100 nA | — |
| Infrared Range | — | — | YES | — |
| Light Current-Nom | — | — | 6 mA | — |
| Mounting Feature | — | — | SURFACE MOUNT | — |
| Number of Functions | — | — | 1 | 1 |
| On-State Current-Max | — | — | 0.05 A | — |
| Optoelectronic Device Type | — | — | PHOTO TRANSISTOR | — |
| Packing Method | — | — | TR | TR |
| Peak Wavelength | — | — | 850 nm | — |
| Power Dissipation-Max | — | — | 0.1 W | — |
| Shape | — | — | ROUND | — |
| Size | — | — | 1.8 mm | — |
| Pbfree Code | — | — | — | No |
| Manufacturer Package Code | — | — | — | RD-8-2 |
| Reach Compliance Code | — | — | — | Compliant |
| Adjustability | — | — | — | ADJUSTABLE |
| Dropout Voltage1-Max | — | — | — | 0.325 V |
| Dropout Voltage1-Nom | — | — | — | 0.2 V |
| Line Regulation-Max (%/V) | — | — | — | 0.015 |
| Load Regulation-Max(%) | — | — | — | 0.3% |
| Number of Outputs | — | — | — | 1 |
| Operating Temperature TJ-Max | — | — | — | 125 °C |
| Operating Temperature TJ-Min | — | — | — | -40 °C |
| Output Current1-Max | — | — | — | 0.3 A |
| Output Voltage1-Max | — | — | — | 19.675 V |
| Output Voltage1-Min | — | — | — | 1.22 V |
| Package Equivalence Code | — | — | — | SOP8,.25 |
| Regulator Type | — | — | — | ADJUSTABLE POSITIVE SINGLE OUTPUT LDO REGULATOR |
| Technology | — | — | — | CMOS |
| Terminal Pitch | — | — | — | 1.27 mm |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 3 alternatives for STD13NM60ND — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
suggested
suggested
Why Look for Alternatives?
Finding alternatives for STD13NM60ND is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STD13NM60ND replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
Can't Find What You Need?
Our sourcing team can help find compatible alternatives for STD13NM60ND. Get expert recommendations within 24 hours.
FAQ
What is equivalent to STD13NM60ND?
Known equivalents for STD13NM60ND include STD13NM60N, VEMT2520X01, ADP7102ARDZ-R7. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STD13NM60ND?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STD13NM60ND alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.