STD13N60M2Alternatives & Equivalent Parts

About STD13N60M2

STD13N60M2 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTD13N60M2SourceSTD13N60DM2STD13N60M6
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeOtherOtherOther
Pin Count333
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C
Price$0.4636$0.6104$0.8753
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVE
Electrical Parameters
Factory Lead Time14 Weeks14 Weeks
YTEOL455
Avalanche Energy Rating (Eas)125 mJ340 mJ
Case ConnectionDRAINDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V600 V
Drain Current-Max (ID)11 A11 A
Drain-source On Resistance-Max0.38 Ω0.365 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252TO-252AA
JESD-30 CodeR-PSSO-G2R-PDSO-G2
Number of Elements11
Operating ModeENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)NOT SPECIFIEDNOT SPECIFIED260
Polarity/Channel TypeN-CHANNELN-CHANNEL
Pulsed Drain Current-Max (IDM)44 A44 A
Surface MountYESYES
Terminal FormGULL WINGGULL WING
Terminal PositionSINGLESINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIEDNOT SPECIFIED
Transistor ApplicationSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICON
Manufacturer Package CodeDPAK
Additional FeatureAVALANCHE ENERGY RATED
Feedback Cap-Max (Crss)0.9 pF
Power Dissipation-Max (Abs)110 W
Turn-off Time-Max (toff)53.1 ns
Turn-on Time-Max (ton)17.1 ns
JESD-609 Codee3
Terminal FinishMatte Tin (Sn) - annealed

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for STD13N60M2 — response within 24 hours.

Quick Links

STD13N60DM2by STMicroelectronics

Power Field-Effect Transistor, 11A I(D), 600V, 0.365ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

STD13N60M6by STMicroelectronics

Power Field-Effect Transistor

Why Look for Alternatives?

Finding alternatives for STD13N60M2 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STD13N60M2 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

Can't Find What You Need?

Our sourcing team can help find compatible alternatives for STD13N60M2. Get expert recommendations within 24 hours.

FAQ

What is equivalent to STD13N60M2?

Known equivalents for STD13N60M2 include STD13N60DM2, STD13N60M6. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STD13N60M2?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STD13N60M2 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.