STB7NK80Z-1Alternatives & Equivalent Parts
About STB7NK80Z-1
STB7NK80Z-1 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STB7NK80Z-1Source | STB7NK80ZT4 |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Other |
| Pin Count | 3 | 4 |
| Temperature Range | ~ 150.0°C | ~ 150.0°C |
| Price | $1.4016 | $0.9779 |
| Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE |
| Electrical Parameters | ||
| Reach Compliance Code | Not Compliant | — |
| Factory Lead Time | 13 Weeks | 13 Weeks |
| YTEOL | 6.2 | 6 |
| Additional Feature | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 210 mJ | 210 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800 V | 800 V |
| Drain Current-Max (ID) | 5.2 A | 5.2 A |
| Drain-source On Resistance-Max | 1.8 Ω | 1.8 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-262AA | TO-263AB |
| JESD-30 Code | R-PSIP-T3 | R-PSSO-G2 |
| JESD-609 Code | e3 | e3 |
| Number of Elements | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR |
| Package Style | IN-LINE | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 245 |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125 W | 125 W |
| Pulsed Drain Current-Max (IDM) | 20.8 A | 20.8 A |
| Qualification Status | Not Qualified | Not Qualified |
| Surface Mount | NO | YES |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE | GULL WING |
| Terminal Position | SINGLE | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 30 |
| Transistor Application | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON | SILICON |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering this alternative for STB7NK80Z-1 — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Why Look for Alternatives?
Finding alternatives for STB7NK80Z-1 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STB7NK80Z-1 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STB7NK80Z-1?
Known equivalents for STB7NK80Z-1 include STB7NK80ZT4. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STB7NK80Z-1?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STB7NK80Z-1 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.