STB18N55M5Alternatives & Equivalent Parts
About STB18N55M5
STB18N55M5 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STB18N55M5Source | M24128-BRMN6P | M24C16-DFCU6TP/K | M95320-DFMN6TP | STF100N10F7 |
|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Other | Small Outline Packages | BGA | Small Outline Packages | Transistor Outline, Vertical |
| Pin Count | 4 | 8 | 4 | 8 | 3 |
| Temperature Range | ~ 150.0°C | -40.0°C ~ 85.0°C | -40.0°C ~ 85.0°C | -40.0°C ~ 85.0°C | ~ 175.0°C |
| Price | $1.5125 | $0.1660 | $0.1607 | $0.2161 | $0.8720 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | OBSOLETE | ACTIVE UNCONFIRMED | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||
| YTEOL | 0 | 2 | 6 | 9 | 6 |
| Additional Feature | ULTRA-LOW RESISTANCE | — | — | — | — |
| Avalanche Energy Rating (Eas) | 200 mJ | — | — | — | 400 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | — | — | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 550 V | — | — | — | 100 V |
| Drain Current-Max (ID) | 13 A | — | — | — | 32 A |
| Drain-source On Resistance-Max | 0.24 Ω | — | — | — | 0.008 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB | — | — | — | TO-220AB |
| JESD-30 Code | R-PSSO-G2 | R-PDSO-G8 | R-PBGA-B4 | R-PDSO-G8 | R-PSFM-T3 |
| JESD-609 Code | e3 | e4 | — | e4 | — |
| Number of Elements | 1 | — | — | — | 1 |
| Operating Mode | ENHANCEMENT MODE | SYNCHRONOUS | SYNCHRONOUS | — | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | SMALL OUTLINE | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 245 | — | 260 | 260 | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | — | — | — | N-CHANNEL |
| Power Dissipation-Max (Abs) | 90 W | — | — | — | 30 W |
| Pulsed Drain Current-Max (IDM) | 52 A | — | — | — | 180 A |
| Surface Mount | YES | YES | YES | YES | NO |
| Terminal Finish | MATTE TIN | Nickel/Palladium/Gold (Ni/Pd/Au) | — | NICKEL PALLADIUM GOLD | — |
| Terminal Form | GULL WING | GULL WING | BALL | GULL WING | THROUGH-HOLE |
| Terminal Position | SINGLE | DUAL | BOTTOM | DUAL | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | — | 30 | 30 | NOT SPECIFIED |
| Transistor Application | SWITCHING | — | — | — | SWITCHING |
| Transistor Element Material | SILICON | — | — | — | SILICON |
| Factory Lead Time | — | 4 Weeks | 10 Weeks | 8 Weeks | 13 Weeks |
| Clock Frequency-Max (fCLK) | — | 0.4 MHz | 0.4 MHz | — | — |
| Data Retention Time-Min | — | 200 | — | 200 | — |
| Endurance | — | 4000000 Write/Erase Cycles | — | 4000000 Write/Erase Cycles | — |
| I2C Control Byte | — | 1010DDDR | — | — | — |
| Memory Density | — | 131072 bit | 16384 bit | 32768 bit | — |
| Memory IC Type | — | EEPROM | EEPROM | EEPROM | — |
| Memory Width | — | 8 | 8 | 8 | — |
| Number of Functions | — | 1 | 1 | — | — |
| Number of Words | — | 16384 words | 2048 words | 4096 words | — |
| Number of Words Code | — | 16000 | 2000 | 4000 | — |
| Organization | — | 16KX8 | 2KX8 | 4KX8 | — |
| Package Equivalence Code | — | SOP8,.25 | — | SOP8,.25 | — |
| Parallel/Serial | — | SERIAL | SERIAL | SERIAL | — |
| Qualification Status | — | Not Qualified | — | Not Qualified | — |
| Serial Bus Type | — | I2C | I2C | SPI | — |
| Standby Current-Max | — | 0.000001 A | — | 0.000001 A | — |
| Supply Current-Max | — | 0.0025 mA | — | 0.005 mA | — |
| Supply Voltage-Max (Vsup) | — | 5.5 V | 5.5 V | — | — |
| Supply Voltage-Min (Vsup) | — | 1.8 V | 1.6 V | — | — |
| Supply Voltage-Nom (Vsup) | — | 2.5 V | 1.8 V | — | — |
| Technology | — | CMOS | CMOS | CMOS | — |
| Temperature Grade | — | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | — |
| Terminal Pitch | — | 1.27 mm | 0.4 mm | 1.27 mm | — |
| Write Cycle Time-Max (tWC) | — | 5 ms | — | — | — |
| Write Protection | — | HARDWARE | — | HARDWARE/SOFTWARE | — |
| ## M24128-BRMN6P Alternates Showing results | — | Image | — | — | — |
| Case Connection | — | — | — | — | ISOLATED |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
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Get one quote covering all 4 alternatives for STB18N55M5 — response within 24 hours.
Quick Links
Why Look for Alternatives?
Finding alternatives for STB18N55M5 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STB18N55M5 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STB18N55M5?
Known equivalents for STB18N55M5 include M24128-BRMN6P, M24C16-DFCU6TP/K, M95320-DFMN6TP. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STB18N55M5?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STB18N55M5 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.