SI2325DS-T1-E3Alternatives & Equivalent Parts
About SI2325DS-T1-E3
SI2325DS-T1-E3 is a Integrated Circuit component manufactured by Vishay. It comes in a SOT23 (3-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Get one quote covering all 4 alternatives for SI2325DS-T1-E3 — response within 24 hours.
Specification Comparison
| Parameter | SI2325DS-T1-E3Source | CSD18532Q5BT | DRV8303DCA | UVZ2A331MHD | OPA365AIDBVR |
|---|---|---|---|---|---|
| Manufacturer | Vishay | Texas Instruments | Texas Instruments | Nichicon | Texas Instruments |
| Package Type | SOT23 (3-Pin) | Other | Small Outline Packages | Capacitor, Polarized Radial Diameter | SOT23 (5-Pin) |
| Pin Count | 3 | 9 | 49 | 2 | 5 |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 105.0°C | -40.0°C ~ 125.0°C |
| Price | $0.2771 | $0.9180 | $2.6742 | $0.5000 | $1.1100 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||
| Factory Lead Time | 12 Weeks | — | — | — | — |
| YTEOL | 7 | 15 | 15 | 6 | 15 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | — | — | — |
| DS Breakdown Voltage-Min | 150 V | 60 V | — | — | — |
| Drain Current-Max (ID) | 0.53 A | 100 A | — | — | — |
| Drain-source On Resistance-Max | 1.3 Ω | 0.0043 Ω | — | — | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | — | — |
| Feedback Cap-Max (Crss) | 16 pF | 17 pF | — | — | — |
| JEDEC-95 Code | TO-236AB | — | — | — | — |
| JESD-30 Code | R-PDSO-G3 | R-PDSO-N8 | R-PDSO-G48 | — | R-PDSO-G5 |
| JESD-609 Code | e3 | e3 | e4 | e3 | e4 |
| Number of Elements | 1 | 1 | — | — | — |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | — | — | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | — | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | CYLINDRICAL PACKAGE | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH | Radial | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 | — | 260 |
| Polarity/Channel Type | P-CHANNEL | N-CHANNEL | — | — | — |
| Power Dissipation-Max (Abs) | 0.75 W | 156 W | — | — | — |
| Qualification Status | Not Qualified | — | — | — | Not Qualified |
| Surface Mount | YES | YES | YES | NO | YES |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | GULL WING | NO LEAD | GULL WING | — | GULL WING |
| Terminal Position | DUAL | DUAL | DUAL | — | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | 30 | — | 30 |
| Transistor Element Material | SILICON | SILICON | — | — | — |
| Pbfree Code | — | Yes | Yes | Yes | Yes |
| Additional Feature | — | AVALANCHE RATED | — | — | — |
| Avalanche Energy Rating (Eas) | — | 320 mJ | — | — | — |
| Case Connection | — | DRAIN | — | — | — |
| Pulsed Drain Current-Max (IDM) | — | 400 A | — | — | — |
| Transistor Application | — | SWITCHING | — | — | — |
| ## CSD18532Q5BT Alternates Showing results | — | Image | — | — | — |
| Analog IC - Other Type | — | — | 3-PHASE BRUSHLESS DC MOTOR CONTROLLER | — | — |
| Number of Functions | — | — | 1 | — | 1 |
| Output Current-Max | — | — | 1.7 A | — | — |
| Package Equivalence Code | — | — | TSSOP48,.3,20 | — | TSOP5/6,.11,37 |
| Supply Voltage-Max (Vsup) | — | — | 60 V | — | — |
| Supply Voltage-Min (Vsup) | — | — | 6 V | — | — |
| Supply Voltage-Nom (Vsup) | — | — | 8 V | — | 5 V |
| Temperature Grade | — | — | AUTOMOTIVE | — | AUTOMOTIVE |
| Terminal Pitch | — | — | 0.5 mm | 5 mm | 0.95 mm |
| ## DRV8303DCA Alternates Showing results | — | — | Image | — | — |
| Reach Compliance Code | — | — | — | Not Compliant | — |
| Capacitance | — | — | — | 330 µF | — |
| Capacitor Type | — | — | — | ALUMINUM ELECTROLYTIC CAPACITOR | — |
| Diameter | — | — | — | 12.5 mm | — |
| Dielectric Material | — | — | — | ALUMINUM (WET) | — |
| Leakage Current | — | — | — | 0.99 mA | — |
| Mounting Feature | — | — | — | THROUGH HOLE MOUNT | — |
| Negative Tolerance | — | — | — | 20% | — |
| Packing Method | — | — | — | BULK | TR |
| Polarity | — | — | — | POLARIZED | — |
| Positive Tolerance | — | — | — | 20% | — |
| Rated (DC) Voltage (URdc) | — | — | — | 100 V | — |
| Ripple Current | — | — | — | 540 mA | — |
| Tan Delta | — | — | — | 0.08 | — |
| Terminal Shape | — | — | — | WIRE | — |
| Amplifier Type | — | — | — | — | OPERATIONAL AMPLIFIER |
| Architecture | — | — | — | — | VOLTAGE-FEEDBACK |
| Average Bias Current-Max (IIB) | — | — | — | — | 0.00001 µA |
| Bias Current-Max (IIB) @25C | — | — | — | — | 0.00001 µA |
| Common-mode Reject Ratio-Min | — | — | — | — | 100 dB |
| Common-mode Reject Ratio-Nom | — | — | — | — | 120 dB |
| Frequency Compensation | — | — | — | — | YES |
| Input Offset Current-Max (IIO) | — | — | — | — | 0.00001 µA |
| Input Offset Voltage-Max | — | — | — | — | 200 µV |
| Low-Bias | — | — | — | — | YES |
| Low-Offset | — | — | — | — | YES |
| Micropower | — | — | — | — | NO |
| Power | — | — | — | — | NO |
| Programmable Power | — | — | — | — | NO |
| Slew Rate-Nom | — | — | — | — | 25 V/us |
| Supply Current-Max | — | — | — | — | 5 mA |
| Supply Voltage Limit-Max | — | — | — | — | 5.5 V |
| Technology | — | — | — | — | CMOS |
| Unity Gain BW-Nom | — | — | — | — | 50000 |
| Voltage Gain-Min | — | — | — | — | 50100 |
| Wideband | — | — | — | — | NO |
| ## OPA365AIDBVR Alternates Showing results | — | — | — | — | Image |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 4 alternatives for SI2325DS-T1-E3 — response within 24 hours.
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Why Look for Alternatives?
Finding alternatives for SI2325DS-T1-E3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SI2325DS-T1-E3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SI2325DS-T1-E3?
Known equivalents for SI2325DS-T1-E3 include CSD18532Q5BT, DRV8303DCA, UVZ2A331MHD. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SI2325DS-T1-E3?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SI2325DS-T1-E3 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.