SCTWA50N120-4 STMicroelectronics Integrated Circuit (Other) In Stock
The SCTWA50N120-4 is a silicon carbide (SiC) power MOSFET rated at 1200 V and 65 A with a typical on-resistance of 52 mΩ in an HiP247-4 package. It features a built-in diode and a 30 pF feedback capacitance, enabling high-efficiency power switching. Available from STMicroelectronics with worldwide stock.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- SCTWA50N120-4 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SCTWA50N120-4?
- 1200 V breakdown voltage with 65 A continuous drain current enabling high-power industrial inverter designs
- Typical 52 mΩ on-resistance in silicon carbide technology for ultra-low switching losses and high efficiency
- HiP247-4 package with built-in diode and 30 pF feedback capacitance supporting compact, reliable power module assemblies
What is SCTWA50N120-4 used for?
The SCTWA50N120-4 is optimized for high-efficiency power conversion in solar inverters, EV charging stations, and industrial motor drives where 1200 V blocking voltage and low conduction losses are essential. Its SiC technology enables operation at higher switching frequencies compared to silicon IGBTs, reducing the size of passive components in power stages. The integrated diode and HiP247-4 package simplify PCB layout in demanding high-voltage applications.
What are the specifications of SCTWA50N120-4?
| YTEOL | 3 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 65A |
| Drain-source On Resistance-Max | 0.069Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 30pF |
| JESD-30 Code | R-PSFM-T4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 318W |
| Pulsed Drain Current-Max (IDM) | 130A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the SCTWA50N120-4 datasheet?
SCTWA50N120-4 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for SCTWA50N120-4?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of the SCTWA50N120-4, and how do they compare to silicon MOSFETs?
The SCTWA50N120-4 is rated at 1200 V drain-source breakdown voltage and 65 A maximum drain current, with a typical on-resistance of 52 mΩ. Compared to equivalent silicon MOSFETs, SiC technology provides significantly lower switching losses and enables operation at higher junction temperatures, making it more efficient in power conversion applications above 600 V.
Which power conversion systems are best served by the SCTWA50N120-4's SiC MOSFET characteristics?
Solar string inverters, three-phase industrial motor drives, and EV fast chargers operating at 800 V bus voltages benefit most from the SCTWA50N120-4. Its 1200 V rating provides adequate voltage margin, while the 52 mΩ on-resistance and SiC substrate reduce conduction losses across the 65 A operating range, improving overall system efficiency.
Does the SCTWA50N120-4 require an external freewheeling diode in a half-bridge topology?
No external freewheeling diode is needed because the SCTWA50N120-4 has a built-in body diode rated to handle reverse current. In half-bridge and full-bridge topologies, this integrated diode with a 30 pF feedback capacitance simplifies PCB layout and reduces component count, lowering both BOM cost and parasitic inductance in the switching loop.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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