SCT20N170 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
SCT20N170 is a silicon carbide N-channel Power MOSFET from STMicroelectronics rated at 1700 V and 43 A with 64 mOhm on-resistance. Housed in an HiP247 package, it is engineered for high-efficiency power conversion. Available from stock with worldwide distribution and competitive pricing.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SCT20N170 Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1700 V breakdown voltage with 43 A drain current enabling use in high-voltage industrial converter topologies
- Ultra-low 64 mOhm on-resistance (typ. at 25 C) reducing conduction losses for improved system efficiency
- Silicon carbide technology delivering superior switching speed and high-temperature operation compared to silicon MOSFETs
Applications
The SCT20N170 is designed for high-voltage power conversion applications including solar inverters, industrial motor drives, and EV charging infrastructure where efficiency above 98% and high-temperature operation are required. Its 1700 V rating suits three-level and T-type inverter topologies operating from 800 V DC bus systems. High-frequency switching converters in uninterruptible power supplies and rail traction systems also benefit from the low switching losses inherent in SiC technology.
Specifications
| Date Of Intro | 2020-08-03 |
| YTEOL | 0 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
For a 800 V DC bus inverter, how does the SCT20N170 on-resistance compare to a conventional silicon MOSFET?
The SCT20N170 delivers 64 mOhm on-resistance at 25 degrees C, which is significantly lower than most comparably rated silicon superjunction MOSFETs at 1700 V. Silicon devices at this voltage class typically exhibit 400 mOhm or higher, so the SiC device reduces conduction losses by a factor of 6, enabling power efficiency gains of 1 to 2 percentage points in a full-bridge inverter running at 800 V bus.
At what maximum junction temperature can the SCT20N170 operate continuously in a motor drive application?
The SCT20N170 is rated for continuous operation up to 175 degrees C junction temperature, which is 25 to 50 degrees C higher than conventional silicon IGBT modules. This permits operation with smaller heatsinks in 43 A motor drives and reduces cooling system cost while maintaining safe margins in 600 V to 1200 V drive topologies.
Which solar inverter power stage topologies are best served by the SCT20N170?
The SCT20N170 is well matched to string inverter and central inverter topologies that use a two-level or three-level NPC stage operating from a 1000 V to 1500 V PV array. Its 1700 V blocking voltage provides a 200 V margin above the maximum DC bus, and its fast body diode recovery time of under 20 ns minimises reverse-recovery losses at 20 kHz to 100 kHz switching frequencies.
How does the HiP247 package of the SCT20N170 benefit high-current power converter PCB layouts?
The HiP247 package is an isolated TO-247 variant with a Kelvin-source pin that allows separate connection of gate-drive and power-source paths. This reduces parasitic inductance in the gate loop, enabling switching speeds below 50 ns at 43 A without oscillation. The package also withstands 2500 V isolation between the tab and leads, simplifying heatsink mounting in multi-switch inverter modules.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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