PUCC21750DW Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
The PUCC21750DW is a single-channel isolated gate driver optimized for SiC MOSFETs and IGBTs, delivering 10 A peak output current with advanced protection features and high CMTI in a 16-pin SOIC package. It provides robust galvanic isolation for high-voltage power conversion stages. Available from stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 16
- Lifecycle
- OBSOLETE
- Datasheet
- PUCC21750DW Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 10 A peak output current capability drives large SiC MOSFET and IGBT gate capacitances at high switching speeds
- High common-mode transient immunity (CMTI) prevents spurious switching caused by dV/dt events in high-voltage inverters
- Advanced protection features including DESAT detection and soft turn-off prevent device destruction during short-circuit events
- Gated Schmitt-trigger input with hysteresis provides clean signal conditioning for noisy PWM signals from microcontrollers and DSPs
Applications
The PUCC21750DW is designed for isolated gate drive stages in solar inverters, motor drives, and industrial power supplies that use SiC MOSFETs or IGBTs in full-bridge or half-bridge topologies. Its high CMTI and 10 A drive strength enable fast switching transitions at voltages up to several kilovolts, maximizing converter efficiency. The integrated DESAT protection and soft turn-off make it particularly well suited for harsh industrial environments where shoot-through and short-circuit fault conditions must be managed safely.
Specifications
| YTEOL | 0 |
| High Side Driver | NO |
| Input Characteristics | GATED SCHMITT TRIGGER |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 Code | R-PDSO-G16 |
| Number of Functions | 1 |
| Output Characteristics | STANDARD |
| Output Peak Current Limit-Nom | 10A |
| Output Polarity | TRUE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Supply Voltage-Max | 5.5V |
| Supply Voltage-Min | 3V |
| Supply Voltage-Nom | 5V |
| Supply Voltage1-Max | 33V |
| Supply Voltage1-Min | 13V |
| Supply Voltage1-Nom | 20V |
| Surface Mount | YES |
| Temperature Grade | AUTOMOTIVE |
| Terminal Form | GULL WING |
| Terminal Pitch | 1.27mm |
| Terminal Position | DUAL |
| Turn-off Time | 0.13 µs |
| Turn-on Time | 0.13 µs |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.60 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for PUCC21750DW:
Frequently Asked Questions
What peak output current does the PUCC21750DW provide?
The PUCC21750DW delivers a peak output current of 10 A, which is sufficient to rapidly charge and discharge the large gate capacitances of wide-bandgap SiC MOSFETs and high-voltage IGBTs, enabling fast switching transitions and reduced switching losses in power converters.
What protection features does the PUCC21750DW include?
The PUCC21750DW integrates DESAT (desaturation) detection that monitors the collector-emitter or drain-source voltage to identify short-circuit conditions, along with a soft turn-off function that gently turns off the power device to prevent overvoltage spikes during fault events, protecting both the driver and the power transistor.
Is the PUCC21750DW suitable for SiC MOSFET gate driving?
Yes, the PUCC21750DW is specifically optimized for SiC MOSFET and IGBT gate driving. It supports the negative gate bias voltages typically required by SiC MOSFETs during the off-state, and its high CMTI ensures reliable operation under the fast dV/dt transitions inherent to SiC switching at high voltages.
What package does the PUCC21750DW use?
The PUCC21750DW is available in a 16-pin SOIC wide-body (DW suffix) package. The through-hole and surface-mount compatible wide-body SOIC provides adequate creepage and clearance distances required for reinforced isolation in high-voltage power electronics designs.
What applications is the PUCC21750DW best suited for?
The PUCC21750DW is best suited for high-voltage power conversion applications including three-phase motor drives, solar PV inverters, UPS systems, and EV traction inverters. Its combination of isolated drive, high peak current, DESAT protection, and high CMTI addresses the full set of requirements for safe and efficient switching of SiC and IGBT power modules.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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