Nexperia

PMEG4010EJ is a single Nexperia Schottky rectifier diode in a compact SOD-323F (SC-90) 2-pin package, rated for 40 V and featuring a maximum forward voltage of 0.64 V for high-efficiency rectification. It handles up to 9 A non-repetitive peak current for robust transient performance in power supply designs.

Nexperia PMEG1030EJ is a silicon Schottky rectifier diode rated at 3 A continuous forward current and 10 V reverse voltage with a maximum forward voltage of 0.53 V. Housed in a compact SOD323F 2-pin package, it delivers high efficiency rectification for low-voltage, high-current power conversion applications.

The Nexperia PEMH9 is a dual digital transistor (resistor-equipped) combining one NPN and one PNP transistor in a 6-pin SOT-666 package. It features a built-in bias resistor ratio of 4.7, rated for 100 mA collector current, 50 V collector-emitter voltage, and up to 100 MHz operation. Available from authorized distributors with worldwide shipping.

Nexperia PDTC123ET is a digital NPN transistor in SOT-23 (TO-236AB) with built-in 2.2 kΩ base bias resistors (R1:R2 ratio of 1) rated at 100 mA collector current and 50 V VCEo. Minimum hFE of 30 suits direct MCU GPIO switching without external resistors. Available from authorized distributors with worldwide shipping.

The PESD3V3V4UG from Nexperia is a quad-channel, uni-directional TVS diode array in a 5-pin UMT package with common anode configuration, protecting 4 signal lines simultaneously. It clamps transient voltages to 11 V maximum, handles 16 W peak pulse power, and features a breakdown voltage of 5.3 V to 5.9 V, making it ideal for ESD protection on USB, HDMI, and serial data lines.

Nexperia PEMZ1 is a dual NPN and PNP complementary bipolar transistor pair rated at 0.1 A collector current, 40 V breakdown, and 100 MHz transition frequency with minimum hFE of 120. Packaged in a compact 6-pin SSMini flat-lead SOT for space-efficient small-signal switching designs.

Nexperia PESD24VL1BA is a bidirectional TVS diode with a 27.8 V nominal breakdown voltage, 70 V clamping voltage, and 200 W peak pulse power in a compact UMD 2-pin SOD package. Designed for ESD protection on 24 V signal and power lines with low capacitance to preserve signal integrity. Available from stock with worldwide shipping.

Nexperia PDTC144WU is an NPN digital transistor with a built-in 47 kΩ base resistor and 0.47 resistor ratio, rated at 100 mA collector current and 50 V collector-emitter voltage. Housed in a compact 3-pin UMT (SOT-323) package with minimum hFE of 60, it simplifies switching design by eliminating external bias components. Available from stock with worldwide shipping.

PDTC143XU is a digital NPN transistor from Nexperia with built-in 4.7 kΩ input resistor and 10 kΩ base-emitter resistor for direct logic-level drive. It supports 100 mA collector current and 50 V breakdown voltage in a 3-pin SOT-323 UMT package. Available from global distributors for high-volume consumer and industrial switching designs.

Nexperia PDTC143ZU is an NPN digital transistor with built-in 4.7kΩ bias resistors, rated at 100mA collector current and 50V VCE, housed in a compact 3-pin UMT package. From $0.05 in stock, worldwide shipping available.

Nexperia PDTC143TU is an NPN digital transistor with built-in 4.7 kΩ base bias resistors, rated at 100 mA collector current and 50 V, in a compact 3-pin SOT-323 package that eliminates external resistors. Available from stock with worldwide shipping.

PDTC123JU is an NPN digital transistor from Nexperia with built-in 2.2 kΩ base bias resistor, rated at 100 mA collector current and 50 V collector-emitter voltage. It integrates a bias resistor ratio of 21 to eliminate external components in logic-level switching circuits. Available in a 3-pin UMT package with worldwide shipping.

Nexperia PDTC143EU is an NPN digital transistor with a built-in 4.7 kΩ bias resistor, rated at 100 mA collector current, 50 V collector-emitter voltage, and minimum hFE of 30, in a compact 3-pin UMT package. The integrated resistor eliminates external base resistors and simplifies PCB layout for digital switching applications. Available globally through authorized distributors with competitive pricing for high-volume designs.

Nexperia PDTC123EU is an NPN digital transistor with built-in 2.2 kΩ bias resistors (ratio 1:1), 100 mA collector current, and 50 V collector-emitter voltage in a compact 3-pin SOT-323 (UMT) package. Eliminates external base resistors for simplified circuit design. Available from authorized distributors with worldwide shipping.

Nexperia PDTC124EU is an NPN digital transistor with built-in 22 kΩ bias resistors, rated at 100 mA collector current and 50 V collector-emitter voltage. The 3-pin SOT-23 (UMT) package integrates bias resistors for direct microcontroller interfacing without external components. Available in stock worldwide for switching and logic interface applications.

Nexperia PDTC124XU is an NPN digital transistor with built-in 22 kΩ bias resistors, 100 mA collector current, and 50 V collector-emitter voltage in a compact 3-pin UMT package. It simplifies interface circuit design by eliminating external base resistors. Available from authorized distributors with worldwide shipping.

PDTC114YU is an NPN resistor-equipped transistor (RET) from Nexperia in SC-70 (SOT-323) 3-pin package with 50 V collector-emitter voltage, 100 mA collector current, and built-in 4.7 kΩ bias resistor. Eliminates external base resistors for simplified circuit design and reduced component count. Ideal for digital switching and logic interface applications in portable and consumer electronics. Available from stock with worldwide shipping.

Nexperia PDTA144WU is a PNP digital transistor with built-in 47 kΩ bias resistors, rated at 50 V collector-emitter voltage and 100 mA collector current in a compact 3-pin UMT SOT-23 package. The integrated bias resistors eliminate the need for external base resistors, simplifying PCB layout and reducing component count in switching circuits. Available from authorized distributors worldwide with reliable inventory and competitive pricing.

Nexperia PDTA123JU is a PNP digital transistor with built-in 2.2 kΩ base resistor and 47 kΩ bias resistor, rated at 100 mA and 50 V, housed in a compact 3-pin UMT/SOT323 package for space-constrained switching circuits.

Nexperia PDTA144EU is a PNP digital transistor with built-in 47 kΩ bias resistors (ratio 1), rated at 100 mA collector current and 50 V collector-emitter voltage, housed in a compact 3-pin UMT (SOT-323) package for space-critical switching applications.

Nexperia PDTA143TU is a PNP digital transistor with built-in 4.7 kΩ bias resistors rated at 100 mA collector current and 50 V collector-emitter voltage. Housed in a compact 3-pin UMT (SOT-323) package with minimum hFE of 200, it simplifies circuit design by eliminating external base resistors. Available from stock with worldwide shipping.

Nexperia PDTA143ZU is a PNP digital transistor with built-in 4.7 kΩ bias resistor, rated at 100 mA collector current and 50 V VCE, in a compact 3-pin UMT (SOT-323) package. Available from stock with worldwide shipping.

Nexperia PBSS4140V is an NPN low-saturation bipolar transistor rated at 40 V collector-emitter voltage and 1 A collector current with a minimum DC current gain (hFE) of 200 in a compact 6-pin SOT666 SSMini package. Its low VCEsat characteristic enables efficient load switching in space-constrained portable designs. Available from authorized distributors worldwide with broad inventory and competitive pricing.

Nexperia PBSS305PZ is a PNP bipolar junction transistor rated at 4.5 A collector current and 80 V collector-emitter voltage with a minimum DC current gain (hFE) of 30 and 100 MHz transition frequency in a 4-pin SC-73 surface mount package. Its high current capacity and compact footprint suit motor drive and load switch applications. Available from stock with worldwide shipping.

PBSS3515VS is a dual PNP small-signal bipolar transistor from Nexperia rated at 15 V and 0.5 A with 280 MHz transition frequency and hFE of 90 to 200 in a compact 6-pin SSMini package. Two independent elements enable differential or complementary switching without additional board space. Available from authorized distributors worldwide with fast shipping.

Nexperia PBSS3540E is a PNP bipolar transistor rated at 0.5 A collector current and 40 V breakdown voltage, with 300 MHz transition frequency and HFE of 40, housed in a compact 3-pin SMPAK package for small-signal switching and amplification.

Nexperia PBSS303ND is an NPN bipolar transistor rated at 3 A collector current and 60 V collector-emitter voltage with an hFE of 345 minimum and 140 MHz transition frequency, packaged in a compact 6-pin TSOP for high-efficiency switching and amplification applications.

Nexperia BZX384-C43 is a 43 V, 0.3 W silicon Zener diode with ±5% tolerance in a compact 2-pin UMD (SOD-323) surface mount package. Available in stock with worldwide shipping.

BZX384-C2V7, Zener Diode, 2.7V /-5% 0.3 W 20??A, 2-Pin UMD

SOT-23, 3 PIN

BZX84-C75, Zener Diode, 74.5V ±5% 0.25 W 0.05µA, 3-Pin TO-236AB

BZX84-C30, Zener Diode, 30V ±5% 0.25 W 0.05µA, 3-Pin TO-236AB

BZX84-C22, Zener Diode, 23.3V 5% 250 mW 50nA, 3-Pin SOT-23

8.2V Zener diode,BZX79C8V2 500mW NXP BZX79-C8V2 Zener Diode, 8.2V /-5%, 0.5 W, 0.7uA, 2-Pin ALF

BZX384-C22, Zener Diode, 22.05V /-5% 0.3 W 0.05??A, 2-Pin UMD

BZX79-C51, Zener Diode, 51V /-5% 0.5 W 0.05??A, 2-Pin ALF

BZX79-B5V6, Zener Diode, 5.6V /-2% 0.5 W 1??A, 2-Pin ALF

BZX79-C36, Zener Diode, 36V /-5% 0.5 W 0.05??A, 2-Pin ALF

BZX384-C6V8, Zener Diode, 6.8V /-5% 0.3 W 2??A, 2-Pin UMD

BZX384-C9V1, Zener Diode, 9.05V /-5% 0.3 W 0.5??A, 2-Pin UMD

BZX384-C8V2, Zener Diode, 8.2V /-5% 0.3 W 0.7??A, 2-Pin UMD

BZX384-C75, Zener Diode, 74.5V /-5% 0.3 W 0.05??A, 2-Pin UMD

BZX384-C3V6, Zener Diode, 3.6V /-5% 0.3 W 5??A, 2-Pin UMD

BZX384-C4V7, Zener Diode, 4.7V /-5% 0.3 W 3??A, 2-Pin UMD

BZX384-C30, Zener Diode, 30V /-5% 0.3 W 0.05??A, 2-Pin UMD

BZX384-C3V9, Zener Diode, 3.9V /-5% 0.3 W 3??A, 2-Pin UMD

BZX384-C33, Zener Diode, 33V /-5% 0.3 W 0.05??A, 2-Pin UMD

BZX384-C24, Zener Diode, 24.2V /-5% 0.3 W 0.05??A, 2-Pin UMD

BZV85-C51, Zener Diode, 51V /-5% 1.3 W 0.05??A, 2-Pin DO-41

BZX384-C16, Zener Diode, 16.2V /-5% 0.3 W 0.05??A, 2-Pin UMD