PBSS4140V Nexperia Integrated Circuit (SO Transistor Flat Lead) In Stock
Nexperia PBSS4140V is an NPN low-saturation bipolar transistor rated at 40 V collector-emitter voltage and 1 A collector current with a minimum DC current gain (hFE) of 200 in a compact 6-pin SOT666 SSMini package. Its low VCEsat characteristic enables efficient load switching in space-constrained portable designs. Available from authorized distributors worldwide with broad inventory and competitive pricing.
- Manufacturer
- Nexperia
- Package
- SO Transistor Flat Lead
- Pin Count
- 6
- Lifecycle
- OBSOLETE
- Datasheet
- PBSS4140V Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Low saturation voltage (VCEsat) NPN design with 1 A collector current and 40 V VCEO enables high-efficiency load switching in battery-powered portable applications
- Minimum DC current gain (hFE) of 200 allows reliable drive from low-current microcontroller I/O pins without additional drive stage circuitry
- Ultra-compact 6-pin SOT666 SSMini package with flat lead construction supports high-density SMT assembly in space-constrained consumer and wearable electronics
Applications
The PBSS4140V is designed for load switching, relay driving, and signal amplification in portable consumer electronics, wearables, and battery-managed IoT devices where a low-saturation NPN transistor rated at 1 A and 40 V is required in a minimal PCB footprint. Its high current gain of 200 minimum allows direct drive from 3.3 V microcontroller outputs in motor control pre-driver stages and LED driver circuits. The SOT666 SSMini package's low thermal resistance supports continuous 1 A operation with appropriate PCB copper pour for heat spreading.
Specifications
| Date Of Intro | 2017-02-01 |
| YTEOL | 0 |
| Collector Current-Max (IC) | 1A |
| Collector-Emitter Voltage-Max | 40V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 200 |
| JESD-30 Code | R-PDSO-F6 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Surface Mount | YES |
| Terminal Finish | TIN |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 150MHz |
| Package | SO Transistor Flat Lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the maximum collector-emitter voltage and collector current ratings of the PBSS4140V?
The PBSS4140V is rated for 40 V maximum collector-emitter voltage (VCEO) and 1 A maximum continuous collector current (IC). Its minimum DC current gain (hFE) of 200 ensures sufficient base-to-collector amplification for microcontroller-driven switching at base currents as low as 5 mA to achieve full 1 A collector saturation in load switching circuits.
How does the low-saturation characteristic of the PBSS4140V benefit battery-powered portable designs?
The PBSS4140V's low VCEsat means less voltage is dropped across the transistor when conducting 1 A at 40 V, reducing power dissipation and extending battery runtime in portable electronics. For example, a VCEsat of under 200 mV at 100 mA base current translates to less than 200 mW conduction loss at full 1 A load, compared to standard bipolar transistors with VCEsat above 400 mV under similar conditions.
What packaging advantage does the SOT666 SSMini format provide compared to a standard SOT-23 for compact PCB designs?
The 6-pin SOT666 SSMini package of the PBSS4140V has a smaller body footprint than a conventional SOT-23-3, allowing placement in areas under 2 mm x 2 mm on the PCB while providing 6 contacts for dual-signal or complementary configurations. This is particularly valuable in wearable devices and hearing aid PCBs where multiple switching transistors must fit within tight layout constraints near sensitive analog sections.
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