PBSS3515VS Nexperia Integrated Circuit (SO Transistor Flat Lead) In Stock
PBSS3515VS is a dual PNP small-signal bipolar transistor from Nexperia rated at 15 V and 0.5 A with 280 MHz transition frequency and hFE of 90 to 200 in a compact 6-pin SSMini package. Two independent elements enable differential or complementary switching without additional board space. Available from authorized distributors worldwide with fast shipping.
- Manufacturer
- Nexperia
- Package
- SO Transistor Flat Lead
- Pin Count
- 6
- Lifecycle
- END OF LIFE
- Datasheet
- PBSS3515VS Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual independent PNP elements in a single 6-pin SSMini package saving 50% board space versus two discrete SOT-23 devices
- 280 MHz transition frequency (fT) enabling high-speed switching and RF amplification up to VHF band
- 15 V collector-emitter breakdown with 0.5 A continuous IC rating covering most low-voltage control circuits
- DC current gain (hFE) minimum 200 at IC = 2 mA for high-sensitivity low-power signal amplification
Applications
PBSS3515VS is ideal for dual-channel level shifting and current mirroring in portable consumer electronics where two PNP transistors are needed in minimal board space. Its 280 MHz fT suits intermediate-frequency amplifier stages in RF receivers and differential signal conditioning circuits operating at up to 100 MHz. Battery management circuits use paired PNP elements for complementary switch control, taking advantage of matched 15 V / 0.5 A ratings within a single 6-pin 1.6x1.6 mm SSMini footprint.
Specifications
| Date Of Intro | 2017-02-01 |
| YTEOL | 2 |
| Collector Current-Max (IC) | 0.5A |
| Collector-Emitter Voltage-Max | 15V |
| Configuration | SEPARATE, 2 ELEMENTS |
| DC Current Gain-Min (hFE) | 200 |
| JESD-30 Code | R-PDSO-F6 |
| JESD-609 Code | e3 |
| Number of Elements | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | PNP |
| Surface Mount | YES |
| Terminal Finish | TIN |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 280MHz |
| Package | SO Transistor Flat Lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Malaysia |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for PBSS3515VS:
Frequently Asked Questions
What is the transition frequency of PBSS3515VS and which frequency range of circuits does it suit?
PBSS3515VS has a transition frequency (fT) of 280 MHz at IC = 10 mA, VCE = 5 V, allowing the device to maintain current gain above unity up to 280 MHz. This makes it suitable for IF amplifier stages between 10 MHz and 100 MHz, VHF oscillator circuits, and high-speed digital switching applications with rise times below 5 ns. Both PNP elements share the same 280 MHz fT, enabling matched dual-channel designs.
How does the dual PNP configuration of PBSS3515VS reduce BOM cost versus using two separate SOT-23 transistors?
PBSS3515VS integrates 2 independent PNP elements in a 6-pin SSMini package measuring 1.6x1.6 mm, replacing 2 individual SOT-23 transistors that each occupy 2.9x1.3 mm. Total board area drops from approximately 7.5 mm² (two SOT-23s) to 2.56 mm², a 66% reduction. BOM line count decreases by 1 item, and pick-and-place assembly time halves for the transistor pair, yielding meaningful cost savings at volumes above 10,000 units per month.
What collector-emitter voltage and current ratings make PBSS3515VS suitable for 12 V load switching applications?
PBSS3515VS is rated VCEO = 15 V and IC(max) = 500 mA continuous, providing a safety margin of 3 V above a 12 V supply rail. At IC = 100 mA, the typical VCE(sat) is below 200 mV, minimizing power dissipation in saturation. The SOT-363/SSMini 6-pin package has a thermal resistance of approximately 400 °C/W junction-to-ambient, allowing continuous operation at IC = 200 mA without exceeding 125 °C junction temperature in a 25 °C ambient environment.
When would an engineer choose PBSS3515VS over two individual BC807 transistors for a dual PNP application?
PBSS3515VS is preferred over two BC807 SOT-23 devices when the PCB footprint budget is less than 4 mm² for the transistor pair and when fT above 200 MHz is required. BC807 is rated at only 150 MHz fT, while PBSS3515VS reaches 280 MHz, offering 87% higher bandwidth. The single-package dual PNP also simplifies pick-and-place programming by eliminating one component reel and reduces thermal mismatch between elements, which matters in precision differential amplifier stages requiring less than 1 mV offset between channels.
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