LMG3425R050 Texas Instruments Integrated Circuit (Other) In Stock
LMG3425R050 is a 600 V, 50 mΩ GaN FET with integrated gate driver, protection, temperature reporting, and ideal diode mode from Texas Instruments. It enables high-frequency power conversion with reduced switching losses compared to silicon MOSFETs in the same voltage class. From $12.00 in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 55
- Lifecycle
- ACTIVE
- Datasheet
- LMG3425R050 Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V, 50 mΩ GaN FET with integrated driver eliminates external gate drive design and reduces BOM by 5+ components
- Ideal diode mode enables zero-voltage switching and eliminates body-diode conduction losses for >99% efficiency targets
- On-chip temperature reporting and protection (OCP, OVP, OTP) simplify fault management in high-frequency power stages
Applications
The LMG3425R050 is designed for high-efficiency power conversion in server power supplies, telecom rectifiers, solar micro-inverters, and EV on-board chargers operating at 400 V to 600 V bus. Its integrated driver and protection features shorten design time and allow switching frequencies above 300 kHz, dramatically reducing the size of magnetic and capacitive filter components. The ideal diode mode and temperature reporting further enable compact, reliable power stages that meet 80 PLUS Titanium and similar efficiency standards.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for LMG3425R050:
Power Field-Effect Transistor, 600V, 0.055ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
Frequently Asked Questions
What is the on-resistance and voltage rating of the LMG3425R050, and why does this matter for power supply efficiency?
The LMG3425R050 is rated at 600 V drain-to-source and 50 mΩ R_DS(on), which gives it roughly 3 to 5 times lower conduction loss than a comparable 600 V silicon MOSFET of the same package size. At 10 A continuous current this translates to approximately 0.5 W conduction loss, enabling converter designs to achieve efficiency levels above 98% in totem-pole PFC and LLC stages operating from a 400 V bus.
How does the ideal diode mode in LMG3425R050 reduce power losses compared to a conventional GaN body diode?
In ideal diode mode the LMG3425R050 actively synchronizes its turn-on to the reverse current condition, replacing the slow 3 V body-diode forward voltage with a controlled channel that limits the voltage drop to less than 0.1 V at 10 A. This eliminates approximately 2 W of additional loss per switch compared to body-diode rectification at 300 kHz, which is critical for meeting 80 PLUS Titanium efficiency targets in 1 kW to 3 kW server supplies.
For a 1 kW solar micro-inverter switching at 300 kHz, what design advantages does LMG3425R050 offer over a discrete SiC MOSFET solution?
The LMG3425R050 integrates the gate driver, OCP/OVP/OTP protection, and temperature sensor alongside the 600 V 50 mΩ GaN FET in a single package, replacing an external driver IC plus 6 to 8 protection components needed with a discrete SiC MOSFET. At 300 kHz the GaN device's lower gate charge of roughly 10 nC reduces gate drive power by more than 50% versus comparable SiC parts, and the smaller magnetic components enabled by the higher frequency reduce transformer volume by approximately 4× for the same 1 kW power level.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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