LM5113SDE Texas Instruments Integrated Circuit (Small Outline No-lead) In Stock

Texas Instruments LM5113SDE is a 100 V half-bridge gate driver capable of sourcing and sinking 5 A peak gate current. It integrates Schmitt trigger inputs and supports GaN FET and MOSFET switching in compact power converter and motor drive designs.

OBSOLETEIntegrated CircuitVerified Jun 2026
Package / Visual Reference
LM5113SDESmall Outline No-lead
Quick Facts
Manufacturer
Texas Instruments
Package
Small Outline No-lead
Pin Count
10
Lifecycle
OBSOLETE
Category
Integrated Circuit
Temp Range
-40.0°C to 125.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

What are the key features of LM5113SDE?

  • 100 V bootstrap supply voltage for high-side MOSFET or GaN FET driving
  • 5 A peak output current for fast gate switching transitions
  • Half-bridge topology with integrated high-side and low-side drivers
  • Schmitt trigger inputs for noise immunity in high-dV/dt environments
  • Compact WSON-10 (S-PDSO-N10) package for dense power stage layouts
  • Optimized for GaN FET gate drive with tight propagation delay matching

What is LM5113SDE used for?

The LM5113SDE is designed for GaN FET and MOSFET half-bridge power stages in DC-DC converters, motor drives, and class-D audio amplifiers operating at up to 100 V. Its 5 A peak gate current capability supports fast switching at high frequencies, reducing switching losses in compact high-efficiency power conversion systems.

What are the specifications of LM5113SDE?

YTEOL0
High Side DriverYES
Input CharacteristicsSCHMITT TRIGGER
Interface IC TypeHALF BRIDGE BASED MOSFET DRIVER
JESD-30 CodeS-PDSO-N10
Number of Functions1
Output CharacteristicsSTANDARD
Output Peak Current Limit-Nom5A
Output PolarityTRUE
Package Body MaterialPLASTIC/EPOXY
Package Equivalence CodeSOLCC10,.16,32
Package ShapeSQUARE
Package StyleSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Qualification StatusNot Qualified
Supply Current-Max3mA
Supply Voltage-Max5.5V
Supply Voltage-Min4.5V
Supply Voltage-Nom5V
Supply Voltage1-Max105.5V
Supply Voltage1-Min-1 V
Supply Voltage1-Nom5V
Surface MountYES
Temperature GradeAUTOMOTIVE
Terminal FormNO LEAD
Terminal Pitch0.8mm
Terminal PositionDUAL
Turn-off Time0.045 µs
Turn-on Time0.045 µs
PackageSmall Outline No-lead

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
HTS Code8542.39.00.60

Where can I find the LM5113SDE datasheet?

LM5113SDE Datasheet Download

Official datasheet from Texas Instruments

What are equivalent replacements for LM5113SDE?

Compatible alternatives and drop-in replacements for LM5113SDE:

LM5113SDE/NOPBTexas Instruments

Half Bridge Based MOSFET Driver, 5A, PDSO10

View Part →
LM5113SD/NOPBTexas Instruments

Half Bridge Based MOSFET Driver, 5A, PDSO10

View Part →

Frequently Asked Questions

Can the LM5113SDE drive GaN FETs, and what gate current does it deliver for fast switching?

Yes. The LM5113SDE is specifically optimized for GaN FET gate drive, providing up to 5 A peak output current to charge and discharge gate capacitances quickly. This supports high switching frequencies in DC-DC converters operating at up to 100 V, minimizing switching losses.

What topology does the LM5113SDE support, and how does its high-side bootstrap work up to 100 V?

The LM5113SDE supports a half-bridge topology with a bootstrap-based high-side driver rated to 100 V. The bootstrap capacitor charges during the low-side on-time, allowing the high-side gate drive to float up with the switching node and reliably turn on the top FET at high supply voltages.

How does the Schmitt trigger input of LM5113SDE benefit noisy power converter PCB environments?

The Schmitt trigger input structure provides hysteresis on the logic threshold, rejecting high-frequency noise and dV/dt coupled transients common in half-bridge power stages switching at 100 V. This prevents false triggering of the gate driver during fast switch-node transitions without requiring additional RC filtering.

What is the package type and pin count of the LM5113SDE, and how does it affect thermal management in power designs?

The LM5113SDE comes in a WSON-10 (S-PDSO-N10) 10-pin surface-mount package with an exposed thermal pad. The compact package reduces parasitic inductance in the gate drive loop and allows the thermal pad to provide a direct heat conduction path to the PCB copper pour, aiding thermal management at high switching currents.

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About Texas Instruments

Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.

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Lead Time3-7 business days
MOQFrom 1 piece
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OriginChina (Authorized)

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