LM5113SD/NOPB Texas Instruments Integrated Circuit (Small Outline No-lead) In Stock
Texas Instruments LM5113SD/NOPB is a half-bridge GaN FET gate driver with 5 A peak output current and Schmitt trigger inputs, housed in a 10-pin SON package for high-frequency power conversion using gallium nitride transistors.
- Manufacturer
- Texas Instruments
- Package
- Small Outline No-lead
- Pin Count
- 11
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- LM5113SD/NOPB Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $3.8800(MOQ 500)
- Temp Range
- -40.0°C to 125.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of LM5113SD/NOPB?
- 5 A peak source and sink gate drive current enabling fast switching of GaN FETs at frequencies above 1 MHz for compact power converters
- Half-bridge topology with high-side and low-side driver outputs supporting bootstrap operation for synchronous buck and full-bridge converter designs
- Gated Schmitt trigger inputs providing noise immunity and preventing shoot-through in high-dV/dt switching environments typical of GaN power stages
What is LM5113SD/NOPB used for?
The LM5113SD/NOPB is designed to drive GaN power transistors in high-frequency DC/DC converters, LLC resonant converters, and motor drive inverters where switching speeds above 1 MHz are required to reduce passive component size. Its half-bridge driver architecture supports synchronous rectification in server power supplies, solar micro-inverters, and wireless power transmitters leveraging GaN efficiency advantages. The compact 10-pin SON package minimizes gate drive loop inductance, which is critical for exploiting the fast switching capabilities of GaN FETs operating at voltages up to 100 V.
What are the specifications of LM5113SD/NOPB?
| Pbfree Code | Yes |
| YTEOL | 3.9 |
| High Side Driver | YES |
| Input Characteristics | GATED SCHMITT TRIGGER |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| JESD-30 Code | S-PDSO-N10 |
| JESD-609 Code | e3 |
| Number of Functions | 1 |
| Output Characteristics | OPEN-DRAIN |
| Output Current-Max | 5A |
| Output Peak Current Limit-Nom | 5A |
| Output Polarity | TRUE |
| Package Body Material | PLASTIC/EPOXY |
| Package Equivalence Code | SOLCC10,.16,32 |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE, VERY THIN PROFILE |
| Peak Reflow Temperature (Cel) | 260 |
| Qualification Status | Not Qualified |
| Supply Current-Max | 3mA |
| Supply Voltage-Max | 5.5V |
| Supply Voltage-Min | 4.5V |
| Supply Voltage-Nom | 5V |
| Supply Voltage1-Max | 95.5V |
| Supply Voltage1-Min | 1V |
| Supply Voltage1-Nom | 5V |
| Surface Mount | YES |
| Temperature Grade | AUTOMOTIVE |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Pitch | 0.8mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Turn-off Time | 0.045 µs |
| Turn-on Time | 0.045 µs |
| Package | Small Outline No-lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8542.39.00.90 |
Where can I find the LM5113SD/NOPB datasheet?
LM5113SD/NOPB Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for LM5113SD/NOPB?
Compatible alternatives and drop-in replacements for LM5113SD/NOPB:
Frequently Asked Questions
What peak gate drive current does the LM5113SD/NOPB provide and why does this matter for GaN FET switching?
The LM5113SD/NOPB delivers 5 A peak gate drive current, enabling extremely fast switching transitions in GaN FETs with typical gate charge values below 10 nC. Fast gate transitions reduce switching losses, allowing power converters to operate efficiently at frequencies above 1 MHz without excessive heat generation in the power stage.
How does the LM5113SD/NOPB handle bootstrap operation for driving high-side GaN transistors in a half-bridge circuit?
The LM5113SD/NOPB uses a bootstrap capacitor connected to its BOOT pin to supply the floating high-side driver, allowing the high-side GaN FET gate to be driven above the output rail by typically 5 V to 12 V. This bootstrap approach eliminates the need for an isolated power supply for the high-side driver, simplifying the power stage design in synchronous buck and half-bridge topologies operating up to 100 V.
For a 1 MHz GaN-based DC/DC converter, what package does the LM5113SD/NOPB use and why is it beneficial?
The LM5113SD/NOPB is housed in a 10-pin SON (Small Outline No-Lead) package, measuring approximately 3 mm x 3 mm. The leadless SON package minimizes parasitic inductance in the gate drive loop, which is critical for GaN converters switching at 1 MHz and above since even 1 nH of loop inductance can cause ringing and overshoot that degrades efficiency and reliability.
Which converter topologies are most compatible with the LM5113SD/NOPB for high-frequency power conversion?
The LM5113SD/NOPB is optimized for half-bridge based topologies including synchronous buck converters, full-bridge inverters, and LLC resonant converters where both high-side and low-side GaN FETs must be driven with 5 A peak current at switching frequencies from 100 kHz to over 1 MHz. These topologies appear in server power supplies, EV onboard chargers, and industrial variable-frequency drives targeting above 95% efficiency.
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Why Buy from FindMyChip
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
More from Texas Instruments
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 500+ | $3.9800 | $1990.00 |
| 1000+ | $3.9300 | $3930.00 |
| 2000+ | $3.8800 | $7760.00 |
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