IRF5305PBF Infineon MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock
Infineon IRF5305PBF is a P-channel power MOSFET rated at 55 V and 31 A with a maximum Rds(on) of 60 mΩ in a 3-pin TO-220AB package. Avalanche-rated and high-reliability for robust load-switching and motor-control designs. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IRF5305PBF Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.4338(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IRF5305PBF?
- 55 V drain-source breakdown voltage with 31 A continuous drain current for medium-power P-channel switching
- Maximum Rds(on) of 60 mΩ enables efficient high-side switching with low conduction losses
- 280 mJ avalanche energy (Eas) rating provides ruggedness against inductive switching transients
- TO-220AB through-hole package with drain-connected tab allows direct heatsink mounting for thermal management
- Avalanche-rated and high-reliability designation ensures long-term operation in demanding industrial environments
What is IRF5305PBF used for?
The IRF5305PBF is well suited for high-side P-channel switching in 12 V to 48 V automotive and industrial load switch circuits, including reverse polarity protection and battery power path management. Its 31 A current rating and low 60 mΩ Rds(on) make it effective in DC motor drives, solenoid drivers, and electronic circuit breakers where P-channel topologies simplify gate drive requirements. The TO-220AB package and avalanche rating also support use in linear power regulators and flyback converter synchronous rectifiers.
What are the specifications of IRF5305PBF?
| YTEOL | 5 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 280mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55V |
| Drain Current-Max (ID) | 31A |
| Drain-source On Resistance-Max | 0.06Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 110W |
| Pulsed Drain Current-Max (IDM) | 110A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China, Malaysia, Taiwan |
Where can I find the IRF5305PBF datasheet?
IRF5305PBF Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for IRF5305PBF?
Compatible alternatives and drop-in replacements for IRF5305PBF:
Frequently Asked Questions
How does the IRF5305PBF perform in a 12 V high-side load switch application?
In a 12 V high-side configuration, the IRF5305PBF's 55 V breakdown voltage provides ample headroom, and its 60 mΩ Rds(on) limits conduction loss to only 0.6 W at 10 A, keeping the TO-220AB package cool without a large heatsink. The built-in body diode also protects against reverse current during switching transitions.
What protection does the 280 mJ avalanche rating offer when driving inductive loads with IRF5305PBF?
The 280 mJ avalanche energy rating means the IRF5305PBF can safely absorb a single-pulse inductive kick of up to 280 mJ without damage. For a 31 A circuit with a 100 µH inductor, this corresponds to substantial fly-back energy, reducing the need for external snubber or transient voltage suppression components in motor and solenoid drive designs.
When is IRF5305PBF a better choice than an N-channel MOSFET for a given power switch design?
A P-channel device like IRF5305PBF is preferred in high-side switch designs where the gate can be driven to ground relative to the source, eliminating the need for a bootstrap or charge pump circuit required by N-channel high-side drivers. With a 55 V rating and 31 A capability, it covers most 12 V to 24 V automotive and industrial load switch applications without additional gate-drive complexity.
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Why Buy from FindMyChip
About Infineon
Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1575 | $2.16 |
| 4+ | $0.7806 | $3.12 |
| 8+ | $0.7765 | $6.21 |
| 13+ | $0.4520 | $5.88 |
| 16+ | $0.4338 | $6.94 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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