HMC435AMS8G Analog Devices Integrated Circuit (Small Outline Packages) In Stock
Analog Devices HMC435AMS8G is a DC to 4 GHz SPDT high-isolation RF switch IC with 1.8 dB maximum insertion loss, 30 dB minimum port isolation, 30 dBm 1 dB compression point, and 50 Ω impedance in an SMT package for wireless and test equipment applications.
- Manufacturer
- Analog Devices
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- HMC435AMS8G Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 85.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of HMC435AMS8G?
- Broadband DC to 4 GHz frequency range covers cellular, ISM, WiFi, and WiMAX bands in a single SMT SPDT switch
- High isolation of 30 dB minimum between switched RF ports prevents signal leakage in sensitive receiver and transceiver front-ends
- Low insertion loss of 1.8 dB maximum preserves signal power in transmit/receive switching paths at 50 Ω characteristic impedance
- 30 dBm (1 W) 1 dB compression point and 30.97 dBm CW input power rating supports high-power transmit path switching without distortion
What is HMC435AMS8G used for?
The HMC435AMS8G is used in wireless transceiver front-end modules, test and measurement antenna switch matrices, and frequency-hopping radio architectures requiring low-loss, high-isolation RF signal routing from DC to 4 GHz. Its 30 dBm power handling capacity makes it suitable for transmit/receive switching in cellular base station small cells, WiFi access points, and radar test benches where signal integrity must be maintained at both milliwatt and near-watt power levels. The SMT package simplifies integration into compact RF PCB layouts at 50 Ω impedance, reducing board area compared to discrete PIN diode switch implementations.
What are the specifications of HMC435AMS8G?
| Pbfree Code | No |
| Manufacturer Package Code | HRH-8-1 |
| YTEOL | 0 |
| 1dB Compression Point | 30dBm |
| Additional Feature | HIGH ISOLATION |
| Characteristic Impedance | 50Ω |
| Construction | COMPONENT |
| Input Power-Max (CW) | 30.97dBm |
| Insertion Loss-Max | 1.8dB |
| Isolation-Min | 30dB |
| Mounting Feature | SURFACE MOUNT |
| Number of Functions | 1 |
| On Time-Nom | 0.06 µs |
| Operating Frequency-Max | 4000MHz |
| Package Body Material | PLASTIC/EPOXY |
| Port Termination | ABSORPTIVE |
| RF/Microwave Device Type | DIVERSITY SWITCH |
| Surface Mount | YES |
| Technology | MES |
| VSWR-Max | 1.15 |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8536.50.70.00 |
Where can I find the HMC435AMS8G datasheet?
HMC435AMS8G Datasheet DownloadOfficial datasheet from Analog Devices
What are equivalent replacements for HMC435AMS8G?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What frequency range does the HMC435AMS8G cover, and which wireless standards fall within its operating band?
The HMC435AMS8G operates from DC to 4 GHz, covering a broad swath of wireless communication standards including GSM (0.85-1.9 GHz), UMTS (2.1 GHz), WiFi 802.11b/g/n (2.4 GHz), WiMAX (2.5-3.5 GHz), and sub-4 GHz ISM band applications. This single device eliminates the need for multiple band-specific switches in multi-mode radios, simplifying front-end designs in handsets, small cells, and software-defined radio platforms.
How do the 30 dB isolation and 1.8 dB insertion loss specs of the HMC435AMS8G affect receiver sensitivity in a T/R switch design?
In a transmit-receive (T/R) switch application, the 30 dB minimum isolation ensures that transmit power leaking into the receive path is attenuated by a factor of 1000, preventing LNA saturation during simultaneous or near-simultaneous TX/RX switching. The 1.8 dB maximum insertion loss on the receive path corresponds to a noise figure contribution of approximately 1.8 dB, which is the dominant degradation to receiver sensitivity and must be budgeted in the system link budget analysis.
What power handling capability does the HMC435AMS8G offer, and for which transmit applications is it appropriate?
The HMC435AMS8G handles up to 30.97 dBm (approximately 1.25 W) of CW input power and maintains 1 dB compression point at 30 dBm. This power level is appropriate for WiFi access point power amplifier output switching, small cell base station T/R switching, and RF test equipment signal routing where standard switching FETs rated below 20 dBm would clip or distort the transmitted signal.
How does the HMC435AMS8G compare to PIN diode SPDT switches for a 2.4 GHz WiFi front-end design?
The HMC435AMS8G offers a simpler single-chip SMT solution compared to PIN diode T/R switches, which require external bias inductors, coupling capacitors, and often two diodes plus a 50 Ω termination network. The integrated CMOS/GaAs switch eliminates 5-8 passive components, reducing BOM cost and PCB area by over 60% for a 2.4 GHz 802.11n front-end, while delivering comparable 1.8 dB insertion loss and 30 dB isolation performance in a single 8-lead SMT package.
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Why Buy from FindMyChip
About Analog Devices
Analog Devices (ADI) is a global leader in high-performance analog, mixed-signal, and digital signal processing integrated circuits used in virtually all types of electronic equipment.
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