GW35NB60SD STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
The GW35NB60SD is an N-channel PowerMESH IGBT rated at 35 A and 600 V in a TO-247 through-hole package, featuring low collector-emitter saturation voltage for high-efficiency switching. It targets motor drives and inverter applications. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- GW35NB60SD Datasheet PDF
- Category
- Transistor IGBT
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 35 A / 600 V N-channel IGBT for high-power motor drive and inverter designs
- Low drop PowerMESH technology reduces conduction losses at full 35 A current
- TO-247 package provides excellent thermal dissipation for continuous high-current operation
- Suitable for switching frequencies up to tens of kHz in resonant and hard-switching topologies
Applications
The GW35NB60SD is designed for high-efficiency power switching in AC motor drives, solar inverters, and UPS systems requiring a 600 V blocking voltage and 35 A continuous collector current. Its low-drop PowerMESH cell structure minimizes conduction losses during on-state operation, improving system efficiency at full load in industrial variable-frequency drives and welding inverters. The rugged TO-247 package enables direct heat-sink mounting for continuous operation in thermally demanding environments.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for GW35NB60SD:
Frequently Asked Questions
What are the voltage and current ratings of the GW35NB60SD, and which power levels does it support?
The GW35NB60SD is rated for 600 V collector-emitter voltage and 35 A continuous collector current, enabling it to switch power levels up to approximately 21 kW in a single-switch configuration on a 400 V AC three-phase bus. This rating is well-matched to 5–15 kW variable-frequency drives, grid-tied inverters, and industrial welding power supplies operating from 230 V or 400 V mains.
How does the PowerMESH technology in the GW35NB60SD reduce conduction losses compared to standard IGBTs?
STMicroelectronics' PowerMESH cell design optimizes the ratio of IGBT and MOSFET regions within the device to achieve a lower collector-emitter saturation voltage (VCE(sat)) than conventional planar IGBTs at 35 A. Lower VCE(sat) directly reduces on-state power dissipation (P = VCE × IC), which improves efficiency and reduces heat-sink requirements in inverters and motor drives operating at 20–50 kHz switching frequencies.
What thermal advantages does the TO-247 package provide for the GW35NB60SD in a heat-sink mounted design?
The TO-247 through-hole package features a large exposed metal tab that can be bolted directly to a heat sink, providing a very low junction-to-case thermal resistance — typically below 0.5 °C/W. This allows the GW35NB60SD to dissipate the heat generated at 35 A switching currents without exceeding its 150°C maximum junction temperature, even in ambient temperatures up to 85°C with a properly sized heat sink.
When is the GW35NB60SD a better choice than a MOSFET for a 400 V motor drive design?
At 600 V blocking and 35 A continuous current, IGBTs like the GW35NB60SD have a lower on-state VCE(sat) compared to equivalent silicon MOSFETs at those voltage/current ratings, resulting in lower conduction losses. MOSFETs are preferred below approximately 250 V where their RDS(on) advantage is significant, but above 400 V the IGBT's superior conduction characteristics make it more efficient for 3-phase motor drives switching at 4–20 kHz.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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