GBJ2510Alternatives & Equivalent Parts
About GBJ2510
GBJ2510 is a Bridge Rectifier component manufactured by HY Electronic Corp. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | GBJ2510Source | STP10NK60Z | STP10NK60ZFP | GBJ2510-F | 7443551200 |
|---|---|---|---|---|---|
| Manufacturer | HY Electronic Corp | STMicroelectronics | STMicroelectronics | Diodes Inc. | Würth Elektronik |
| Package Type | Other | Transistor Outline, Vertical | Transistor Outline, Vertical | Other | Other |
| Pin Count | 4 | 3 | 3 | 4 | 2 |
| Temperature Range | -55.0°C ~ 150.0°C | ~ 150.0°C | ~ 150.0°C | -65.0°C ~ 150.0°C | -40.0°C ~ 155.0°C |
| Price | $0.2227 | $0.7056 | $1.0400 | $0.9219 | $2.1980 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | CONTACT MANUFACTURER | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||
| Breakdown Voltage-Min | 1000 V | — | — | 1000 V | — |
| Configuration | BRIDGE, 4 ELEMENTS | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | BRIDGE, 4 ELEMENTS | — |
| Diode Element Material | SILICON | — | — | SILICON | — |
| Diode Type | BRIDGE RECTIFIER DIODE | — | — | BRIDGE RECTIFIER DIODE | — |
| Forward Voltage-Max (VF) | 1 V | — | — | 1.05 V | — |
| JESD-30 Code | R-PSFM-T4 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T4 | — |
| Non-rep Pk Forward Current-Max | 350 A | — | — | 350 A | — |
| Number of Elements | 4 | 1 | 1 | 4 | — |
| Number of Phases | 1 | — | — | 1 | — |
| Output Current-Max | 4.2 A | — | — | 25 A | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | — |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | — |
| Package Style | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | SMT |
| Rep Pk Reverse Voltage-Max | 1000 V | — | — | 1000 V | — |
| Surface Mount | NO | NO | NO | NO | YES |
| Terminal Form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | — |
| Terminal Position | SINGLE | SINGLE | SINGLE | SINGLE | — |
| YTEOL | — | 5.9 | 5.9 | 7 | 15 |
| Avalanche Energy Rating (Eas) | — | 300 mJ | 300 mJ | — | — |
| DS Breakdown Voltage-Min | — | 600 V | 600 V | — | — |
| Drain Current-Max (ID) | — | 10 A | 10 A | — | — |
| Drain-source On Resistance-Max | — | 0.75 Ω | 0.75 Ω | — | — |
| FET Technology | — | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | — |
| JEDEC-95 Code | — | TO-220AB | TO-220AB | — | — |
| JESD-609 Code | — | e3 | e3 | e3 | e1 |
| Operating Mode | — | ENHANCEMENT MODE | ENHANCEMENT MODE | — | — |
| Polarity/Channel Type | — | N-CHANNEL | N-CHANNEL | — | — |
| Power Dissipation-Max (Abs) | — | 115 W | 35 W | — | — |
| Pulsed Drain Current-Max (IDM) | — | 36 A | 36 A | — | — |
| Qualification Status | — | Not Qualified | Not Qualified | Not Qualified | — |
| Terminal Finish | — | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Silver/Copper (Sn/Ag/Cu) |
| Transistor Application | — | SWITCHING | SWITCHING | — | — |
| Transistor Element Material | — | SILICON | SILICON | — | — |
| Factory Lead Time | — | — | 13 Weeks | 12 Weeks | — |
| Case Connection | — | — | ISOLATED | ISOLATED | — |
| Peak Reflow Temperature (Cel) | — | — | 260 | 260 | — |
| Pbfree Code | — | — | — | No | — |
| Reference Standard | — | — | — | UL RECOGNIZED | AEC-Q200 |
| Case/Size Code | — | — | — | — | 5050 |
| Construction | — | — | — | — | Rectangular |
| Core Material | — | — | — | — | IRON ALLOY |
| DC Resistance | — | — | — | — | 0.0026 Ω |
| Inductance-Nom (L) | — | — | — | — | 2 µH |
| Inductor Application | — | — | — | — | HIGH CURRENT INDUCTOR |
| Inductor Type | — | — | — | — | GENERAL PURPOSE INDUCTOR |
| Number of Functions | — | — | — | — | 1 |
| Package Height | — | — | — | — | 6.2 mm |
| Package Length | — | — | — | — | 12.8 mm |
| Package Width | — | — | — | — | 12.8 mm |
| Packing Method | — | — | — | — | TR, EMBOSSED PLASTIC, 13 INCH |
| Rated Current-Max | — | — | — | — | 26.5 A |
| Self Resonance Frequency | — | — | — | — | 45 MHz |
| Shape/Size Description | — | — | — | — | RECTANGULAR PACKAGE |
| Shielded | — | — | — | — | YES |
| Special Feature | — | — | — | — | DC RESISTANCE IS MEASURED AT: 10% |
| Terminal Placement | — | — | — | — | DUAL ENDED |
| Terminal Shape | — | — | — | — | WRAPAROUND |
| Test Frequency | — | — | — | — | 0.1 MHz |
| Tolerance | — | — | — | — | 20% |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 4 alternatives for GBJ2510 — response within 24 hours.
Quick Links
Why Look for Alternatives?
Finding alternatives for GBJ2510 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating GBJ2510 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to GBJ2510?
Known equivalents for GBJ2510 include STP10NK60Z, STP10NK60ZFP, GBJ2510-F. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of GBJ2510?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify GBJ2510 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.