ERJ6GEYJ512VAlternatives & Equivalent Parts

About ERJ6GEYJ512V

ERJ6GEYJ512V is a Resistor component manufactured by Panasonic. It comes in a Resistor Chip package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterERJ6GEYJ512VSourceCR0603-JW-202ELFSTD13NM60NDVEMT2520X01
ManufacturerPanasonicBournsSTMicroelectronicsVishay
Package TypeResistor ChipResistor ChipOtherOther
Pin Count2232
Temperature Range-55.0°C ~ 155.0°C-55.0°C ~ 155.0°C~ 150.0°C-40.0°C ~ 100.0°C
Price$0.0123$0.0013$1.4623$0.1235
StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Pbfree CodeYesYes
Reach Compliance CodeCompliantCompliant
YTEOL121267
ConstructionRectangularRectangular
JESD-609 Codee3e3e3
Mounting FeatureSURFACE MOUNTSURFACE MOUNTSURFACE MOUNT
Package Height0.6 mm0.45 mm
Package Length2 mm1.6 mm
Package ShapeRECTANGULAR PACKAGERECTANGULAR
Package StyleSMTSMTSMALL OUTLINE
Package Width1.25 mm0.8 mm
Packing MethodTR, PUNCHED PAPER, 7 INCHTR, PAPER, 7 INCHTR
Rated Power Dissipation (P)0.125 W0.1 W
Rated Temperature70 °C70 °C
Reference StandardAEC-Q200, IEC60115-8
Resistance5100 Ω2000 Ω
Resistor TypeFIXED RESISTORFIXED RESISTOR
Size Code08050603
Surface MountYESYESYESYES
TechnologyMETAL GLAZE/THICK FILMMETAL GLAZE/THICK FILM
Temperature Coefficient200 ppm/°C200 ppm/°C
Terminal FinishMATTE TIN OVER NICKELTIN OVER NICKELMatte Tin (Sn)
Terminal ShapeWRAPAROUNDWRAPAROUND
Tolerance5%5%
Working Voltage150 V75 V
Factory Lead Time12 Weeks
Avalanche Energy Rating (Eas)162 mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE
DS Breakdown Voltage-Min600 V
Drain Current-Max (ID)11 A
Drain-source On Resistance-Max0.38 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252
JESD-30 CodeR-PSSO-G2
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)44 A
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
## STD13NM60ND Alternates Showing resultsImage
Additional FeatureHIGH RADIANT SENSITIVITY
Coll-Emtr Bkdn Voltage-Min20 V
Dark Current-Max100 nA
Infrared RangeYES
Light Current-Nom6 mA
Number of Functions1
On-State Current-Max0.05 A
Optoelectronic Device TypePHOTO TRANSISTOR
Peak Wavelength850 nm
Power Dissipation-Max0.1 W
ShapeROUND
Size1.8 mm

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Why Look for Alternatives?

Finding alternatives for ERJ6GEYJ512V is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating ERJ6GEYJ512V replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to ERJ6GEYJ512V?

Known equivalents for ERJ6GEYJ512V include CR0603-JW-202ELF, STD13NM60ND, VEMT2520X01. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of ERJ6GEYJ512V?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify ERJ6GEYJ512V alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.